Studies of Oxide Growth Location on Anodization of Al and Ti Provide Evidence Against the Field-Assisted Dissolution and Field-Assisted Ejection Theories

Mengshi Yu,Ying Chen,Chen Li,Shuo Yan,Huimin Cui,Xufei Zhu,Jianshou Kong
DOI: https://doi.org/10.1016/j.elecom.2018.01.003
IF: 5.443
2018-01-01
Electrochemistry Communications
Abstract:Electrochemical anodization, a method of obtaining highly-ordered porous oxides of various metal and alloys, has been studied for decades to elucidate the complicated formation mechanism. Both the widely supported field-assisted dissolution theory and the subsequently proposed field-assisted ejection theory suggest that porous oxide forms at the metal/oxide interface and is dissolved at the oxide/electrolyte interface. Here, in order to test this assertion, three-layered oxide films were fabricated on both Al and Ti foils. Both the inner and outer hemispherical bottoms vanish after the second anodization as they are covered by a new growth of oxide. The disappearance of both inner and outer hemispherical bottoms is evidence against the field-assisted dissolution and field-assisted ejection view that oxide grows only at the metal/oxide interface.
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