Abstract:Research on thin-film technology-based radio frequency (RF) circuits is increasing to address the demand for transparent, wireless, and wearable consumer electronics applications. Owing to their excellent electronic and mechanical properties, two-dimensional materials (2DMs) are candidates with high potential for such applications. The 2DMs graphene and molybdenum disulfide (MoS2) have the highest maturity in terms of material synthesis and fabrication technology. Graphene is of interest because of its high electron and hole mobility, although the lack of a bandgap limits the current saturation and the ratio of current between the ON and the OFF-states of graphene field-effect transistors (FETs). Therefore, we chose metal-insulator-graphene (MIG) diodes with high asymmetry as RF devices and semiconducting MoS2 as the channel material for FETs. We thus combine the strengths of graphene and MoS2 by integrating MIG diodes and MoS2-FETs on 8 µm-thick polyimide substrates, complemented with high-quality passive components. The MIG diodes have asymmetries over 100 A/A and peak responsivities of approximately 20 V-1, whereas the MoS2 FETs have transconductance mobilities averaging 7 cm²/V∙s, with peaks at 17 cm²/V∙s. Furthermore, the technology was developed with standard microfabrication techniques and 2DMs grown with wafer-scalable chemical vapor deposition processes. It was verified by realizing two on-chip wideband power detectors operating up to 30 GHz. Our technology explores new applications of 2D materials in integrated RF circuits and paves the way for full-fledged integrated transceivers on flexible substrates.

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