Role of Electron Filling in the Magnetic Anisotropy of Monolayer WSe2 Doped with 5d Transition Metals

Yan Song,Xiaocha Wang,Wenbo Mi
DOI: https://doi.org/10.1103/physrevmaterials.1.074408
IF: 3.98
2017-01-01
Physical Review Materials
Abstract:Exploringmagnetic anisotropy (MA) in single-atom-doped two-dimensional materials provides a viable ground for realizing information storage and processing at ultimate length scales. Herein, the MA of 5d transition-metal doped monolayer WSe2 is investigated by first-principles calculations. Large MA energy (MAE) is achieved in several doping systems. The direction of MA is determined by the dopant in-plane d states in the vicinity of the Fermi level in line with previous studies. An occupation rule that the parity of the occupation number of the in-plane d orbital of the dopant determines the preference between in-plane and out-of-plane anisotropy is found in this 5d-doped system. Furthermore, this rule is understood by second-order perturbation theory and proved by charge-doping analysis. Considering relatively little research on two-dimensional MA and not sufficiently large MAE, suitable contact medium dopant pairs with large MAE and tunable MA pave the way to novel data storage paradigms.
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