Non-Stoichiometry Effects on the Extreme Magnetoresistance in Weyl Semimetal WTe2

Ji-Xiang Gong,Jun Yang,Min Ge,Yong-Jian Wang,Dan-Dan Liang,Lei Luo,Xiu Yan,Wei-Li Zhen,Shi-Rui Weng,Li Pi,Chang-Jin Zhang,Wen-Ka Zhu
DOI: https://doi.org/10.1088/0256-307x/35/9/097101
2018-01-01
Chinese Physics Letters
Abstract:Non-stoichiometry effect on the extreme magnetoresistance is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistance is strongly dependent on the residual resistivity ratio (i.e., the degree of non-stoichiometry), which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
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