Abstract:Asymmetric transfer characteristics and hysteresis behaviors are two puzzling electronic transport properties in graphene field effect transistor (GFET). Herein, we presented systematic investigations on these phenomena by varying gate voltage sweeping rates and testing chemical atmospheres. Three different doping mechanisms for GFET were proposed to illustrate these behaviors: electric field doping, molecule chemical doping, and electrochemical doping by redox reactions. In ambient environment, the plateau's emergence in asymmetric transfer curve of GFET was attributed to the counteraction between n-type electric field doping and p-type O2/H2O electrochemical doping. The hysteresis effect difference in backward sweeping varied as a function of gate voltage sweeping rate, which has been offered a qualitative explanation in the context of thermodynamics and kinetics. In NH3, the degree of hysteresis effect in GFET increased with the vapor concentration rising up, while NO2 atmosphere induced opposite behavior. Generally, the interplay of the three doping mechanisms accounts for the total Fermi level modulation and carrier migration behavior near the Dirac point. For instance, the electrochemical doping could occur spontaneously because the electric effect doping or chemical doping raised the graphene Fermi level high enough with respect to the electrochemical O2/H2O redox potential.

Negative Differential Resistance and Hysteresis in Graphene-Based Organic Light-Emitting Devices

Understanding asymmetric transfer characteristics and hysteresis behaviors in graphene devices under different chemical atmospheres

Negative Differential Resistance Effect in Organic Devices Based on an Anthracene Derivative

Coexistence of Negative Photoconductivity and Hysteresis in Semiconducting Graphene

Aggregation-induced negative differential resistance in graphene oxide quantum dots.

Eliminating Hysteresis Effects in Flexible Organic Light-Emitting Diodes

Light-induced Negative Differential Resistance in Gate-Controlled Graphene-Silicon Photodiode

Rectification Inversion in Oxygen Substituted Graphyne-Graphene-Based Heterojunctions

Negative differential resistance and memory effects in organic diodes

Stability Analysis of A Back-Gate Graphene Transistor in Air Environment

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Negative differential resistance and multilevel memory effects in organic devices

Negative Differential Resistance Effect of Blue Phosphorene-Graphene Heterostructure Device

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Room-Temperature Organic Negative Differential Resistance Device Using Cdse Quantum Dots As the Ito Modification Layer

The Influences of Lateral Leakage on Hysteresis Effects in Flexible Organic Light-Emitting Diodes Array

Hysteresis of Electronic Transport in Graphene Transistors

Negative Differential Resistance in Graphene Nanoribbon Superlattice Field-Effect Transistors

Diverse Field-Effect Characteristics and Negative Differential Transconductance in a Graphene/ws2/au Phototransistor with a Ge Back Gate.

Photoinduced Negative Differential Resistance at a Graphene/Silicon Interface: A Nonadiabatic Quantum Molecular Dynamics Study

Graphene Nanoribbon As A Negative Differential Resistance Device