Abstract:To effectively regulate thermal transport for the near-junction thermal management of GaN electronics, it is imperative to gain an understanding of the phonon characteristics of GaN nanostructures, particularly the topological phonon properties connected to low-dissipation surface phonon states. In this work, a comprehensive study on phonon modes and topological phonon properties is performed from first principles in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x (x=1,2,3) superlattices. Phonon modes, including the dispersion relation, density of states, and participation ratio, were calculated for six GaN superlattices. The participation ratio results did not reveal the localized phonon mode. In topological phonon analyses, it is found that Weyl phonons with a Chern number of 1(-1) are present in all six GaN superlattices, consisting of trivial (GaN) and nontrivial (AlN and AlGaN) combinations. These phonons are located on either side of the kz = 0 plane symmetrically in the Brillouin zone. With the increase in the number of phonon branches in superlattices, the number of Weyl phonon points also increases from dozens to hundreds. One Weyl phonon with significant and clean surface states is selected and analyzed for each GaN superlattice. Among them, the Weyl phonon in (GaN)2/(AlN)2 superlattice mainly results from the lattice vibrations of Al and Ga atoms, while the Weyl phonons in other superlattices mainly result from the lattice vibrations of N atoms. The Weyl phonons at opposite kz planes form pairs in (GaN)2/(AlN)2, AlGaN/GaN, and (AlGaN)2/(GaN)2. Effects of strain including biaxial and uniaxial strain on Weyl phonons in GaN/AlN and AlGaN/GaN superlattices are investigated. Results indicate that Weyl phonons persist in large strain states, however, no monoclinic trend is observed due to the accidental degeneracy of these superlattices.

Phonon Structures of GaN-based Random Semiconductor Alloys

On the Role of Piezoelectricity in Phonon Properties and Thermal Conductivity of GaN Nanofilms

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Effective Phonon Dispersion and Low field transport in AlxGa1-xN alloys using supercells: An ab-initio approach

High-order Phonon Anharmonicity and Thermal Conductivity in GaN

Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices

Topological Effects of Phonons in GaN and AlGaN: A Potential Perspective for Tuning Phonon Transport

Significant Phonon Drag Effect in Wide Bandgap GaN and AlN

Variations of Interatomic Force Constants in the Topological Phonon Phase Transition of AlGaN

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Lattice Dynamics of Gan/Aln Superlattices

Significantly suppressed thermal transport by doping In and Al atoms in Gallium Nitride

Revisiting phonon thermal transport in two-dimensional gallium nitride: higher-order phonon-phonon and phonon-electron scattering

Lattice Dynamics of Zinc-Blende GaN and AlN: I. Bulk Phonons

Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/Al x Ga 1−x N spherical quantum dots

Ternary Mixed Crystal Effects on Electron-Interface Optical Phonon Interactions in InxGa1−xN/GaN Quantum Wells

Lattice dynamics of zinc-blende GaN and AIN: II. Superlattice phonons

Effective Phonon Dispersion of $β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy semiconductor

Ternary Mixed Crystal Effects on Interface Optical Phonon and Electron-Interface Optical Phonon Coupling in Wurtzite GaN/AlxGa1−xN Quantum Wells

Phonon conduction in GaN-diamond composite substrates

Dispersive Response of Polar Optical Phonon Modes on the Dielectric and Size Effects in a Nitride Nanostructure