Abstract:Heteroepitaxy of beta-phase gallium oxide (beta-Ga2O3) thin films on foreign substrates shows promise for the development of next-generation deep ultraviolet solar blind photodetectors and power electronic devices. In this work, the influences of the film thickness and crystallinity on the thermal conductivity of ((2) over bar 01)-oriented beta-Ga2O3 heteroepitaxial thin films were investigated. Unintentionally doped beta-Ga2O3 thin films were grown on c-plane sapphire substrates with off-axis angles of 0 degrees and 6 degrees toward (11 (2) over bar0) via metal-organic vapor phase epitaxy (MOVPE) and low-pressure chemical vapor deposition. The surface morphology and crystal quality of the beta-Ga2O3 thin films were characterized using scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The thermal conductivities of the beta-Ga2O3 films were measured via time-domain thermoreflectance. The interface quality was studied using scanning transmission electron microscopy. The measured thermal conductivities of the submicron-thick beta-Ga2O3 thin films were relatively low as compared to the intrinsic bulk value. The measured thin film thermal conductivities were compared with the Debye-Callaway model incorporating phononic parameters derived from first-principles calculations. The comparison suggests that the reduction in the thin film thermal conductivity can be partially attributed to the enhanced phonon-boundary scattering when the film thickness decreases. They were found to be a strong function of not only the layer thickness but also the film quality, resulting from growth on substrates with different offcut angles. Growth of beta-Ga2O3 films on 6 degrees offcut sapphire substrates was found to result in higher crystallinity and thermal conductivity than films grown on on-axis c-plane sapphire. However, the beta-Ga2O3 films grown on 6 degrees offcut sapphire exhibit a lower thermal boundary conductance at the beta-Ga2O3/ sapphire heterointerface. In addition, the thermal conductivity of MOVPE-grown ((2) over bar 01)-oriented beta-(AlxGal)(2)O-3 thin films with Al compositions ranging from 2% to 43% was characterized. Because of phonon-alloy disorder scattering, the beta-(AlxGa1-x)(2)O-3 films exhibit lower thermal conductivities (2.8-4.7 W/m.K) than the beta-Ga2O3 thin films. The dominance of the alloy disorder scattering in beta-(AlxGa1-x)(2)O-3 is further evidenced by the weak temperature dependence of the thermal conductivity. This work provides fundamental insight into the physical interactions that govern phonon transport within heteroepitaxially grown beta-phase Ga2O3 and (AlxGa1-x)(2)O-3 thin films and lays the groundwork for the thermal modeling and design of beta-Ga2O3 electronic and optoelectronic devices.

Effective Phonon Dispersion of $β$- (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloy semiconductor

Effective Electronic Structure of Monoclinic $β-(Al_xGa_{1-x})_2O_3$ alloy semiconductor

Effective Phonon Dispersion and Low field transport in AlxGa1-xN alloys using supercells: An ab-initio approach

Phonon Structures of GaN-based Random Semiconductor Alloys

Phonon dispersion in the intermetallic compounds AuGa2 and PtGa2

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

The Spatial Correlation and Anisotropy of β-(AlxGa1−x)2O3 Single Crystal

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Anisotropic Anharmonicity Dictates the Thermal Conductivity of Gallium Oxide ($β-Ga_2O_3$)

Electronic properties and stability of M<sub>2</sub>O<sub>3</sub> (M = Al, Ga, In) and alloy (M<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> in and phases: A theoretical study

Computational design of optimal heterostructures for $β$-Ga$_2$O$_3$

Probing Bond Length and Compositional Disorder in β‐(AlxGa1‐x)2O3 Alloys Using Extended X‐ray Absorption Fine Structure Spectroscopy

Resistive and ballistic phonon transport in $β$-Ga$_2$O$_3$

Impact of disorder on the optoelectronic properties of GaN$_y$As$_{1-x-y}$Bi$_x$ alloys and heterostructures

Band offsets at the interfaces between $β$-Ga$_2$O$_3$ and Al$_2$O$_3$

Thermal Conductivity Of Beta-Phase Ga2o3 And (Ai(X)Ga(1-X))(2)O-3 Heteroepitaxial Thin Films

Full-band Monte Carlo simulation of two-dimensional electron gas in (AlxGa1−x)2O3/Ga2O3 heterostructures

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

Band gap and band offset of Ga$_2$O$_3$ and (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys