Abstract:Continuous few-layer MoS2 thin films composed of the stacked MoS2 nanoflakes were fabricated with a facile thermal decomposition method. These nanoflakes possess exposed active sites which are beneficial to the photocatalytic properties. Defect engineering with the aim to generate more exposed edges accompanied with abundant excited carriers by variation of Ar plasma power has been carried out. Positive results were indeed obtained. On the other hand, increasing exposed active edges/defects induced by Ar plasma was found to lead to the occurrence of oxidation in air with time. The variations of crystallinity, S/Mo ratio, and oxygen adsorption after Ar plasma treatment were investigated by high resolution transmission electron microscopy, high resolution x-ray analysis of photoemission spectroscopy as well as Raman spectroscopy. The few-layer MoS2 bombarded by Ar plasma with 30 W power provides the optimal photocatalytic enhancement in hydrogen production about 1.4 times reaching 246 mmolg−1h−1and the photocurrent density was increased by about 15 times to the pristine one. In addition, MoS2/Au system from our previous survey is also utilized this method can generate 338 mmol/g−1h−1, as high as 188% enhancement compared to pristine one. The increase in conductivity for Ar plasma treated MoS2 thin films is attributed to the formation of 2D phase of MoOx with higher electron mobility. The investigation has clarified the influence of defects on the photocatalytic performance. Nevertheless, the defects were found to be unstable when the samples were stored in the air. It is highly desired to pursue a scheme to stabilized the defects for practical applications.

Raman Spectroscopy Study of Hydrogen Plasma Treatment Effect on a Single Layer Graphene/MoS2 Hybrid Structure

Hydrogen Plasma Treatment of MoS2 with Graphene Protection

Raman spectra investigation of the defects of chemical vapor deposited multilayer graphene and modified by oxygen plasma treatment

Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

Spectroscopic Ellipsometry on Si/SiO2/graphene Tri-Layer System Exposed to Downstream Hydrogen Plasma: Effects of Hydrogenation and Chemical Sputtering

Study on effect of hydrogen treatment on amorphous carbon film using scanning probe microscopy

Hydrogen Plasma Microlithography of Graphene Supported on A Si/Sio2 Substrate

Raman analysis of the dehydrogenation process of hydrogenated monolayer graphene

Effect of Moiré Superlattice Reconstruction in the Electronic Excitation Spectrum of Graphene-Metal Heterostructures

Raman and Photoluminescence Study of Dielectric and Thermal Effects on Atomically Thin MoS2

Effect of layer number and layer stacking registry on the formation and quantification of defects in graphene

Molecular Understanding of the Effect of Hydrogen on Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Raman Study of Polydimethylsiloxane Substrate Effect on Hydrogenation of Graphene

Raman microscopy as a defect microprobe for hydrogen bonding characterization in materials used in fusion applications

Controllable defects in monolayer graphene induced by hydrogen and argon plasma

Effect of Single-Hydrogen-induced Out-of-plane Passivation on Plasmon Excitation in Nanostructured Graphene

Raman Spectroscopy of Graphene Irradiated with Highly Charged Ions

Healing of Reduced Graphene Oxide with Methane + Hydrogen Plasma

Enhancing photocatalytic properties of continuous few-layer MoS2 thin films for hydrogen production by water splitting through defect engineering with Ar plasma treatment

Hydrogenation and Hydro-Carbonation and Etching of Single-Walled Carbon Nanotubes

Study of Graphene Plasmons in Graphene-Mos2 Heterostructures for Optoelectronic Integrated Devices.