Abstract:Highlights • New spintronic nanodevices based on graphene and hBN quantum dots are demonstrated. • Quantum transport are investigated using DFT and nonequilibrium Green's function. • Doping boosts the net spin of heterostructures and improves the transport properties. • Field effect transistors with exceptional ON/OFF ratio ∼10 10 were constructed. Intense efforts are being undertaken to design atomic-scale nanodevices in response to the demand for novel electronic/spintronic devices to address the problems facing the current devices. In this work, we construct new spintronic nanodevices based on 2D heterostructures from graphene and hBN quantum dots. The heterostructures are ferromagnetic spin-ordered semiconductors with nonzero spin originating from the unpaired edge electrons of the graphene quantum dots. The net spin and its distribution on different layers of the heterostructures are controllable. For instance, doping the hBN layer in the lateral graphene-hBN-graphene structure with C-atoms can boost the net spin and facilitate its distribution on the three layers. The electronic properties are also affected where half metallicity has been achieved in this system. The I-V characteristics of the lateral G-hBN heterostructure show an oscillating spin-up current that is significantly higher than the regular spin-down current. Doping G-hBN with C-atoms significantly enhances the current magnitude and removes the oscillation due to the decreased net spin by the dopants. We demonstrate a field effect transistor from the lateral G-hBN-G heterostructure that operates based on quantum tunneling from the G-layer through the hBN-layer. The device works as a spin filter at zero gate voltage. A significant enhancement of the drain current is achieved by applying a positive gate voltage. This device shows an ON/OFF ratio of up to 10 10 making it an ideal applicant for future spintronic nanodevices. Graphical abstract Download : Download high-res image (237KB) Download : Download full-size image

Magnetics and spintronics on two-dimensional composite materials of graphene/hexagonal boron nitride

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Spintronics in 2D graphene-based van der Waals heterostructures

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

2D Magnetic Heterostructures: Spintronics and Quantum Future

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

2D Magnetic Heterostructures and Emergent Spintronic Devices

Band Structure Engineering and Transport Properties of Graphene/bn Van Der Waals Heterostructures

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures

Spin-Dependent Transport at 2D Solids: from Nonmagnetic Layers to Ferromagnetic Van Der Waals Structures.

Graphene-based half-metal and spin-semiconductor for spintronic applications

Giant magnetoresistance and spin-filtering effects in zigzag graphene and hexagonal boron nitride based heterojunction

Spin transport in two-dimensional materials and van der Waals heterostructures

Spintronics in Two-Dimensional Materials

Magnetism in Graphene Systems

Electrical Control of Magnetic Proximity Effect in a Graphene/multiferroic Heterostructure

Spintronics with two-dimensional materials and van der Waals heterostructures

Graphene-based spintronics

Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators

2D spin transport through graphene-MnBi2Te4heterojunction

Highly efficient spin field-effect transistor based on nanographene and hBN heterostructures: spintronic and quantum transport properties