Abstract:Graphene is one of the most promising spintronic materials due to its high carrier mobility. However, the absence of a band gap and ferromagnetic order in graphene seriously limit its applications in spintronics. How to utilize its high carrier mobility as well as mediate its electronic structure remains a challenge. Herein, we design a novel composite, which is composed of graphene and Mn-doped monolayer MoS2. The magnetic properties and electronic structures of graphene/Mn-doped monolayer MoS2 heterostructures were studied by using density functional theory (DFT) with the van der Waals (vdW) correlations (DFT-D). We found that the heterostructures show increased magnetic moments and more stable ferromagnetic (FM) states compared with that of isolated Mn-doped MoS2 monolayer. Our further studies show that many electrons are transferred to Mn-doped MoS2 monolayer from graphene, which causes the Fermi level to shift down below the Dirac cone about 0.59 eV. The transfered electrons also enhance the FM coupling between Mn ions. Graphene is partially spin polarized because of the magnetic proximity effect, which leads to the spin-dependent gaps for spin-up (16.1 meV) and spin-down (5 meV) at Dirac point, respectively. The introduction of sulfur (S) vacancy to the interface results in a much more stable FM structure and a higher total magnetic moment of the FM state; furthermore, it raises the spin polarization of graphene π orbitals and opens up a small band gap of about 7 meV. These findings propose a new route to facilitate the design of spintronic devices which both need stable ferromagnetism and finite band gap.

Graphene-based half-metal and spin-semiconductor for spintronic applications

Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions

Band Structure Engineering and Transport Properties of Graphene/bn Van Der Waals Heterostructures

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Asymmetric Modulation on Exchange Field in a Graphene/BiFeO3 Heterostructure by External Magnetic Field.

Theory of the Dirac Half Metal and Quantum Anomalous Hall Effect in Mn-Intercalated Epitaxial Graphene

Graphene-based Monoatomic Chain Spintronics: Contact-Derived Half-Metallicity, Sp2 Vs Sp

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Functionalized graphene for high-performance two-dimensional spintronics devices.

Enhanced Magnetic Properties and Tunable Dirac Point of Graphene/mn-Doped Monolayer MoS2 Heterostructures

Half-Metallicity in Triangulene-based Superatomic Graphene

Half-Metallic Antiferromagnet as a Prospective Material for Spintronics

Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets

Electrically Induced 2D Half-Metallic Antiferromagnets and Spin Field Effect Transistors.

Half-Metallic Yn2 Monolayer: Dual Spin Filtering, Dual Spin Diode and Spin Seebeck Effects

The design of bipolar spin semiconductor based on zigzag–edge graphene nanoribbons

Spintronics in 2D graphene-based van der Waals heterostructures

An Effective Approach to Achieve a Spin Gapless Semiconductor–Half‐Metal–Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field Via Π–π Interactions

Graphene-based spintronic components

Computational study on ferroelectric control over spin polarization in the bipolar magnetic semiconductor