Abstract:main observation and conclusion Developing low dimensional semiconductors with moderate band gaps, intrinsic ferromagnetism and large magnetic anisotropy energies (MAEs) is very desirable for high-speed nano-spintronic devices, which, however, still remains a big challenge. Here, via first principles calculations, a potential route to realize such materials is proposed based on a new class of one-dimensional transition metal (TM) embedded stannaspherene (Sn-12(2-)) nanowires [TM2(Sn-12)](infinity) (TM = Ti-Ni). Three semiconductors with robust ferromagnetism are achieved with TM = V, Cr and Fe, which all exhibit direct or quasi-direct band gaps around 1.0 eV, rendering their great potentials for visible light optoelectronic applications. Interestingly, [Cr-2(Sn-12)](infinity) and [Fe-2(Sn-12)](infinity) are both identified as bipolar magnetic semiconductors (BMS) with valence and conduction band edges spin polarized in the opposite directions, which are promising for realizing switch of carriers' spin orientation by electrical gating, while [V-2(Sn-12)](infinity) exhibits a half semiconductor (HSC) property with valence and conduction band edges spin polarized in the same direction and can be used for spin-polarized carriers generation. Moreover, sizable MAEs are discovered in these nanowires, which are at least two orders of magnitude larger than those of Fe, Co and Ni bulks and also significantly larger than current ferromagnetic semiconductors.

Half-Semiconductor antiferromagnets and Spin-Gapless-Semiconductor antiferromagnets

Half-Metallic Antiferromagnet as a Prospective Material for Spintronics

Half-metallic diluted antiferromagnetic semiconductors

Graphene-based half-metal and spin-semiconductor for spintronic applications

Strain-induced Programmable Half-Metal and Spin-Gapless Semiconductor in an Edge-Doped Boron Nitride Nanoribbon

Prediction of fully compensated ferrimagnetic spin-gapless semiconducting FeMnGa/Al/In half Heusler alloys

Switchable Metal-to-half-metal Transition at the Semi-Hydrogenated Graphene/ferroelectric Interface.

Dirac half-semimetallicity and antiferromagnetism in graphene nanoribbon/hexagonal boron nitride heterojunctions

Half-Metals: Challenges in Spintronics and Routes Toward Solutions

Cr2TiC2-based Double MXenes: Novel 2D Bipolar Antiferromagnetic Semiconductor with Gate-Controllable Spin Orientation Toward Antiferromagnetic Spintronics.

Ab-initio design of half-metallic fully-compensated ferrimagnets: the case of Cr$_2$MnZ (Z= P, As, Sb, Bi) compounds

Half-metallic ferrimagnet formed by substituting Fe for Mn in semiconductor MnTe

Low-Dimensional Half-Metallic Materials: Theoretical Simulations and Design

Ab initio study of half-metallicity and magnetism of complex organometallic molecular wires

Electronic Origin of Half-Metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4

Spin-gapped metals: A novel class of materials -- the case of semi-Heusler compounds

Spin-polarized two-dimensional electron/hole gas at the interface of non-magnetic semiconducting half-Heusler compounds: Modified Slater-Pauling rule for half-metallicity at the interface

Fe3Se4: A Possible Ferrimagnetic Half-Metal?

Computational Design of One‐Dimensional Ferromagnetic Semiconductors in Transition Metal Embedded Stannaspherene Nanowires

Alloying Two-Dimensional NbSi2N4: A New Strategy to Realize Half-Metallic Antiferromagnets