Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

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GaAs/AlGaAs-Based 870-Nm-band Widely Tunable Edge-Emitting V-Cavity Laser

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

High Q Factor Electrically Injected Green Micro Cavity

Tunable Ultra‐Narrow Linewidth Light Source Through Liquid Crystal‐Assisted Mini‐Bound‐States‐In‐Continuum Cavities

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Tunable Quantum Dot Lasers Grown Directly on Silicon

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Fabrication of GaN-based micro-cavity light emitters

Orthogonally and linearly polarized green emission from a semipolar InGaN based microcavity

Ultra-broadband Tunable Single- and Double-Mode InAs/InP Quantum Dot External-Cavity Laser Emitting Around 165 Μm

Ultra-broadband tunable single- and double-mode InAs/InP quantum dot external-cavity laser emitting around 1.65 μm

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

Full-Color Quantum Dot Light-Emitting Diodes Based on Microcavities

Broadband Tunable InAs/InP Quantum Dot External-Cavity Laser Emitting Around 1.55 Μm.

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization