Abstract:Cu is the key material for both on-chip and inter-chip interconnections. It is the major interconnect material in packaging level, especially in through wafer electrical interconnection (TWEI). Barrier layer is necessary as Cu is easy to diffuse into Si, SiO2 and other dielectrics. Comparing with traditional Ta and Ti based barrier layers, electroless plating NiMoP film has many advantages, such as seedless, low cost, lower resistivity, etc. Electroless plating NiMoP was investigated on SiO2/Si. The plating solution was made up in house. Nickel sulfate and sodium molybdate were the sources of nickel and molybdenum. The effects of [MoO4 2-]/[Ni2+] on the deposition rate of NiMoP and the film composition, electricity property, surface morphology & crystal structure were investigated. The deposition rate of NiMoP would be stable when the ratio of [MoO4 2-]/[Ni2+] is higher than 0.08. The atom percentage of Mo in NiMoP film increases with the increasing of [MoO4 2-]/[Ni2+]initially and then reaches a saturation amount at about 10 at%, while the concentration of P decreases with the increasing [MoO4 2-]/[Ni2+]. The resistivity of NiMoP film can be as low as 70.2 muOmegacm. The optimized deposition condition for a low resistivity NiMoP barrier is with the pH value of 9.0-10.0, plating temperature in the range of 85-90degC and [MoO4 2-]/[Ni2+]of around 0.043. With Auger analysis, the deposited NiMoP film can be the effective diffusion barrier layers after 400degC annealing. A demonstration of 3D interconnection with electroless NiMoP barrier layer has been fabricated.

Investigation of Microstructure and Properties of Ultrathin Graded ZrNx Self-Assembled Diffusion Barrier in Deep Nano-Vias Prepared by Plasma Ion Immersion Implantation

The Self-Formation Graded Diffusion Barrier of Zr/ZrN

Microstructure and Property of Self-Format Graded Diffusion Barrier in Cu(Zr)/Zrn Film System

Self-formed gradient Zr/ZrN double layer diffusion barrier layer and preparation method thereof

Thermal Stability of Ultra Thin Zr-B-N Films As Diffusion Barrier Between Cu and Si

Ultrathin Zrbxoy Films As Diffusion Barriers in Cu Interconnects

The Characterization of Sputtered Zr-Ge-N Thin Films As Diffusion Barriers Between Copper and Silicon

Effect of Sputtering Bias Voltage on the Structure and Properties of Zr–Ge–N Diffusion Barrier Films

Resistivity of Cu-Zr/ZrN diffusion barrier films

An Ultrathin Zr(Ge) Alloy Film As an Exhaustion Interlayer Combined with Cu(Zr) Seed Layer for the Cu/porous SiOC:H Dielectric Integration

High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system

Application of Zr-Si Film As Diffusion Barrier in Cu Metallization

XPS Study on Interfacial Properties Between ZrN Diffusion Barrier Layer and SiCON Low-k Dielectric Film

Study of ultrathin vanadium nitride as diffusion barrier for copper interconnect

The Effect of Nitrogen Partial Pressure on Zr-Si-N Diffusion Barrier

Ultra-Thin Ru/TaN Bi-Layer as Diffusion Barrier to Seedless Copper Interconnect

Non-crystalline Zr–Si Diffusion Barrier for Cu/Si Contact System under Different Sputtering Power

Interface-controlled mechanical properties and irradiation hardening in nanostructured Cr/Zr multilayers

The study of Zr-Si-N diffusion barrier and its thermal stability

Thermal stability of Ta-Si-N/Zr barrier in Cu metallization

Electroless Plating Ni-based Barrier Layers for 3D Interconnection