Abstract:Cu-Zr/ZrN films were grown on Si(111) wafer by magnetron sputtering. The films were characterized with X-ray diffraction (XRD) and scanning electron microscopy (SEM). Its resistivity was studied from application considerations. We conclude that when the film is used as a diffusion barrier, many features, including low contact resistivity, well defined interface and good thermal stability, should be considered in film growth.

Resistivity of Cu-Zr/ZrN diffusion barrier films