A 13B-Enob 173Db-Fom 2Nd-Order NS SAR ADC with Passive Integrators

Wenjuan Guo,Haoyu Zhuang,Nan Sun
DOI: https://doi.org/10.23919/vlsic.2017.8008492
2017-01-01
Abstract:This paper presents a low-power 2 nd -order noise-shaping (NS) SAR ADC. Instead of using power-hungry op-amps, it uses switches and capacitors to make passive integrators for noise shaping. The overall architecture is simple and the NS order can be easily reconfigured from 0 to 2. A prototype chip is fabricated in a 40nm CMOS process. With 2 nd -order NS, the chip consumes 143μW power at 1.1V and 8.4MS/s. At an OSR of 16, SNDR is 80dB and the Schreier FoM is 173dB.
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