Abstract:The rapid development of the next-generation high-speed wireless communication system has set increasingly stringent requirements on the spectral purity of local RF oscillators. Low phase noise is crucial to support advanced modulation scheme enabling high data-rates wireless link [1]. A viable popular approach is to coupled N identical oscillators together to improve the phase noise by 10log <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> N at the cost of N times higher power [2]–[6]. Nevertheless, the coupling network needs to be designed carefully to avoid undesired multi-tone concurrent oscillations. Besides, area occupation is another issue of multi-core VCOs. The star-geometry as shown in Fig. 1. (bottom left), which is simple N times duplication of single core, occupies N times larger area so comes with an area penalty [3]–[5]. To solve this problem, circular geometry is proposed where the passives are merged into a single passive structure and the minimal realizable inductance is reduced while keeping a high Q factor [6]–[7]. In order to further reduce the silicon area, a square-geometry quad-core oscillator with inductor sharing technique is proposed in this paper and it exhibits a compact area of 0.09 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the smallest quad-core VCO operating at a similar oscillation frequency. The unwanted mode is suppressed by the metal trace that connects the drain node of adjacent cores. Thanks to the proposed square-geometry and inductor sharing technique, the proposed quad-core class-F VCO can further reduce the area occupation. The proposed VCO is fabricated in 65nm CMOS technology. The measured phase noise is -137.2 dB/Hz at 10 MHz offset frequency from a carrier of 19 GHz, which translates to the FoM of 186.1 dBc/Hz.

A 80.4-to-86.5 GHz E-band QVCO with Inductor Tuning Method and Amplifier Feedback in 65-Nm CMOS Technology

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

A Superharmonic Injection based G-band Quadrature VCO in CMOS

A Wideband Voltage-Controlled Oscillator with Gain Linearized Varactor Bank

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A Ku-Band 20.4% Tuning Range VCO with a Tunable Harmonic-Resonant Transformer in 55 Nm CMOS

A 68.1-to-73.8ghz E-band Low Phase Noise QPLL with Amplifier Feedback QVCO in 65-Nm CMOS

A 5.6∼8.2ghz QVCO with a New DCCA Circuit

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

A 66-to-76ghz E-band QPLL with Amplifier Feedback QVCO in 65-Nm CMOS

A 5.6 Similar To 8.2ghz Qvco With A New Dcca Circuit

A 4.4-Ghz 193.2-Db FoM 8-Shaped-inductor Based LC-VCO Using Orthogonal-Coupled Triple-Coil Transformer

A Power-Optimized CMOS Quadrature VCO with Wide-Tuning Range for UWB Receivers

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A Compact Square-Geometry Quad-Core 19 GHz Class-F VCO with Parallel Inductor-sharing Technique achieving -137.2 dBc/Hz Phase Noise at 10MHz Offset

An 8.2 GHz triple coupling low-phase-noise class-F QVCO in 65nm CMOS.

A Uniform Phase Noise QVCO with a Feedback Current Source

A Quadrature VCO with Phase Noise Optimization for Wide Tuning Triple Band Frequency Generation

Transformer-based Varactor-Less 96ghz–110ghz VCO and 89ghz–101ghz QVCO in 65nm CMOS

A Wide Band Differentially Switch-Tuned CMOS Monolithic Quadrature VCO with a Low Kvco and High Linearity

An Ultra-Wideband VCO Using Digitally Controlled Varactor Arrays in 40-Nm CMOS Technology