Abstract:We fabricated x(Bi0.5Na0.5)TiO3-(1-x)[BaTiO3-(Bi0.5Na0.5)TiO3-Nb] (BNT-doped BTBNT-Nb) dielectric materials with high permittivity and excellent high-temperature energy storage properties. The initial powder of Nb-modified BTBNT was first calcined and then modified with different stoichiometric ratios of (Bi0.5Na0.5)TiO3 (BNT). Variable-temperature X-ray diffraction (XRD) results showed that the ceramics with a small amount of BNT doping consisted of coexisting tetragonal and pseudocubic phases, which transformed into the pseudocubic phase as the test temperature increased. The results of transmission electron microscopy (TEM) showed that the ceramic grain was the core-shell structure. The permittivity of the 5 mol% BNT-doped BTBNT-Nb ceramic reached up to 2343, meeting the X9R specification. The discharge energy densities of all samples were 1.70-1.91 J/cm(3) at room temperature. The discharge energy densities of all samples fluctuated by only +/- 5% over the wide temperature range from 25 degrees C to 175 degrees C and +/- 8% from 25 degrees C to 200 degrees C. The discharge energy density of the 50 mol% BNT-doped BTBNT-Nb ceramic was 2.01 J/cm(3) at 210 kV/cm and 175 degrees C. The maximum energy efficiencies of all ceramics were up to similar to 91% at high temperatures and were much better than those at room temperature. The stable dielectric properties within a wide temperature window and excellent high-temperature energy storage properties of this BNT-doped BTBNT-Nb system make it promising to provide candidate materials for multilayer ceramic capacitor applications.

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