Abstract:In this study, we incorporated TiN as a carrier suppressor into an amorphous InZnO channel to achieve stable channels for thin-film transistors (TFTs) and light-emitting transistors (LETs). The low electronegativity and standard electrode potential of the Ti dopant led to a reduction in the number of oxygen vacancies in the InZnO channel. Moreover, the substitution of nitrogen into the oxygen sites of InZnO effectively decreased the excess electrons. As a result, the cosputtering of the TiN dopant resulted in a decrease in the carrier concentration of the InZnO channel, serving as an effective carrier suppressor. Due to the distinct structures of TiN and InZnO, the TiN-doped InZnO channel exhibited a completely amorphous structure and a featureless surface morphology. The presence of oxygen vacancies in the InZnO channel creates trap states for electrons and holes. Consequently, the TFT with the InZnTiON channel demonstrated an improved subthreshold swing and enhanced stability during the gate bias stress test. Furthermore, the threshold voltage shift (ΔVth) changed from 3.29 to 0.86 V in the positive bias stress test and from -0.92 to -0.09 V in the negative bias stress test. Additionally, we employed an InZnTiON channel in LETs as a substitute for organic semiconductors. The reduction in the number of oxygen vacancies effectively prevented exciton quenching caused by hole traps within the vacancies. Consequently, appropriate TiN doping in the InZnO channel enhanced the intensity of the LET devices.

Amorphous Nickel Incorporated Tin Oxide Thin Film Transistors

Tunable Electrical Properties of NiO Thin Films and P-Type Thin-Film Transistors

Effects of Ni Doping Composition on the Physical and Electrical Properties of Cu 1- X Ni X O Thin-Film Transistors

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Doping Concentration Effects Upon Column-Structured Nb:TiO2 for Transparent Conductive Thin Films Prepared by a Sol–gel Method

Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications

Amorphous P-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

Effect of Nb Doping Concentration on Transparent Conductivity of TiO2 Films Fabricated by Sol-Gel Method

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

TiO<inf>2</inf>:Nb film thickness influences on the amorphous InGaZnO thin film transistors with Mo/TiO2:Nb source-drain electrodes

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors

Low-temperature Fabrication of Sr–N Co-Doped In2O3 Thin Film by Aqueous Route and Its Application to High Performance InSrNO Thin Film Transistor

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Effects of Source/Drain Electrodes on the Performance of InSnO Thin-Film Transistors

Thin-Film Transistors Based on Amorphous ZnNbSnO Films with Enhanced Behaviors

Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes

Dual Role of AgNO 3 as an Oxidizer and Chloride Remover toward Enhanced Combustion Synthesis of Low-Voltage and Low-Temperature Amorphous Rare Metal-Free Oxide Thin-Film Transistors

Improvement of transistor characteristics and stability for solution-processed ultra-thin high-valence niobium doped zinc-tin oxide thin film transistors

Effect of Source/Drain Electrode Materials on the Electrical Performance and Stability of Amorphous Indium-Tin-Zinc-Oxide FETs