Abstract:In order to improve the performance of transmitted GaAs photoelectric cathode, by comparing the quantum efficiency curve of transmitted GaAs photoelectric cathode with the American ITT company, it is known to see that the integration sensitivity of transmitted photoelectric cathode in China reaches 2130 μA/lm, and the American ITT reaches 2330 μA/lm. Through the matrix method to solve the three membrane, the theory of reflectivity, based on the uniform doping transmission GaAs photocathode quantum efficiency formula, replace the fixed value R with variable value , and join the short wave constraint factor, modify the quantum efficiency formula, get modified uniform doping transmission GaAs photocathode quantum efficiency formula. Using the revised quantum efficiency, optical performance and integral sensitivity theory model, through the American ITT company quantum efficiency curve fitting, introduced the ITT cathode component performance parameters, compared with domestic performance parameters, the results show that the domestic photocathode in the window layer and the thickness of the emission layer, electron diffusion length and after interface composite rate have certain gap with ITT. In order to shorten the gap between the two and optimize the cathode structure parameters, the transmission GaAs photocathode optical structure software is designed to further analyze the influence of the electron diffusion length and the emission layer thickness on the quantum efficiency of the photocathode. The results show that with the electron diffusion length of 7 μm and the emission layer thickness of 1.5 μm, the transmitted GaAs photocathode sensitivity can above 2800 μA/lm. However, the large electron diffusion length has high requirements on cathode materials and preparation level, leading to the gap between China and China, on the one hand, the growth process of cathode materials is not mature, on the other hand, the cathode preparation equipment is backward. In this paper, we study the relationship between GaAs photocathode optical performance and photoemission performance, and further optimize the structural design of cathode components, which has certain guiding significance for improving the cathode quantum efficiency and the level of the enhancer.

Field Enhanced GaN Photocathode and a Proposed Implementation Method

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Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure