Highly Efficient Quantum-Dot Light Emitting Diodes with Sol-Gel Zno Electron Contact

Yue-Qi Liu,Dan-Dan Zhang,Huai-Xin Wei,Qing-Dong Ou,Yan-Qing Li,Jian-Xin Tang
DOI: https://doi.org/10.1364/ome.7.002161
2017-01-01
Optical Materials Express
Abstract:We demonstrated an efficient inverted CdSe/CdS/ZnS quantum dot light emitting diode (QLED) using sol-gel ZnO (s-ZnO) as the electron-injection layer (EIL). The device performance is comparable to that of a device based on the common used nanoparticle ZnO (n-ZnO) EIL. The peak efficiency (12.5 cd/A) and luminance (13000 cd/m(2)) for the s-ZnO based device was found to be similar to the n-ZnO based device (11.2 cd/A and 15000 cd/m2). The morphology properties of these two types of ZnO films were investigated by scanning electron microscope (SEM) and atomic force microscope (AFM) measurements. A very smooth surface was achieved for the s-ZnO film. Moreover, the quantum dot (QD) layer on the s-ZnO also possesses high quality with a close packed structure. (C) 2017 Optical Society of America
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