Transient Transition from Free Carrier Metallic State to Exciton Insulating State in GaAs by Ultrafast Photoexcitation

X. C. Nie,Hai-Ying Song,Xiu Zhang,Peng Gu,Shi-Bing Liu,Fan Li,Jian-Qiao Meng,Yu-Xia Duan,H. Y. Liu
DOI: https://doi.org/10.1088/1367-2630/aaae54
2018-01-01
New Journal of Physics
Abstract:We present systematic studies of the transient dynamics of GaAs by ultrafast time-resolved reflectivity. In photoexcited non-equilibrium states, we found a sign reverse in reflectivity change Delta R/R, from positive around room temperature to negative at cryogenic temperatures. The former corresponds to a free carrier metallic state, while the latter is attributed to an exciton insulating state, in which the transient electronic properties is mostly dominated by excitons, resulting in a transient metal-insulator transition (MIT). Two transition temperatures (T-1 and T-2) are well identified by analyzing the intensity change of the transient reflectivity. We found that photoexcited MIT starts emerging at T-1 as high as similar to 230 K, in terms of a dip feature at 0.4 ps, and becomes stabilized below T-2 that is up to similar to 180 K, associated with a negative constant after 40 ps. Our results address a phase diagram that provides a framework for the inducing of MIT through temperature and photoexcitation, and may shed light on the understanding of light-semiconductor interaction and exciton physics.
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