Abstract:Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical vapor deposition, which contain six periods of low-In-content MQWs and two periods of high-In-content MQWs. For the low-In-content MQWs of three studied samples, their internal quantum efficiency (IQE) shows a rising trend as the emission wavelength increases from 406 nm to 430 nm due to the suppression of carriers escape from the wells to the barriers. However, for the high-In-content MQWs, the sample IQE falls rapidly with a further increase of emission wavelength from 496 nm to 575 nm. Theoretical calculation reveals that the electron-hole wave function overlap in the high-In-content MQWs is reduced because of an increase in the internal polarization field as indium content is increased. In addition, time-resolved photoluminescence decay curves show that the carriers generated in the low-In-content MQWs can be effectively transferred to the high-In-content part through the reabsorption process. However, the transfer time gradually becomes longer as emission wavelength increases, which means a reduction of carrier transfer rate between the different indium content MQWs. Furthermore, nonradiative recombination is enhanced in the high-In-content MQWs with longer emission wavelength due to the decline of crystal quality. Therefore, the fast drop of IQE for high-In-content MQWs can be attributed to the increase of the internal polarization field, the decrease of carrier transfer efficiency, and the enhanced nonradiative recombination. This research has a certain guiding value for an understanding of the recombination mechanism in the InGaN/GaN MQWs and for achieving high quality multiple-wavelength LEDs with better performance.

Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells

Increase of Photogenerated Carriers in Thick Quantum Wells in Ingan Solar Cells Verified by Laser-Assisted Capacitance-Voltage Measurement

Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells

Influence of in Doping in GaN Barriers on Luminescence Properties of InGaN/GaN Multiple Quantum Well LEDs

Compensation Doping In Ingaas/Gaasp Multiple Quantum Well Solar Cells For Efficient Carrier Transport And Improved Cell Performance

Simulation of doping levels and deep levels in InGaN-based single-junction solar cell

Comparative Study on the InGaN Multiple-Quantum-well Solar Cells Assisted by Capacitance-Voltage Measurement with Additional Laser Illumination

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Optimization of Growth and Fabrication Techniques to Enhance the InGaN/GaN Multiple Quantum Well Solar Cells Performance

Investigation of the Light Emission Properties and Carrier Dynamics in Dual-Wavelength InGaN/GaN Multiple-Quantum Well Light Emitting Diodes

Demonstration and Study of Photovoltaic Performances of InGaN p-i-n Homojunction Solar Cells

Dependence of Ingan Solar Cell Performance on Polarization-Induced Electric Field and Carrier Lifetime

An investigation on InxGa1-xN/GaN multiple quantum well solar cells

Influence of Piezoelectric Fields on InGaN Based Intermediate Band Solar Cells

An InGaN-Based Solar Cell Including Dual InGaN/GaN Multiple Quantum Wells

Influence of Indium Composition in the Prestrained Ingan Interlayer on the Strain Relaxation of Ingan/Gan Multiple Quantum Wells in Laser Diode Structures

Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells

Effects of Polarization and P-Type GaN Resistivity on the Spectral Response of InGaN/GaN Multiple Quantum Well Solar Cells

Correlation Between the Structural and Cathodoluminescence Properties in Ingan/Gan Multiple Quantum Wells with Large Number of Quantum Wells

The Growth and Fabrication of InGaN/GaN Multi-Quantum Well Solar Cells on Si(111) Substrates

Study of InGaN/GaN Multiple Quantum Well Solar Cells with Different Barrier Thicknesses