Abstract:Two-dimensional molybdenum disulfide (MoS2) has recently drawn major attention due to its promising applications in electronics and optoelectronics. Chemical vapor deposition (CVD) is a scalable method to produce large-area MoS2 monolayers, yet it is challenging to achieve shape-uniform, high-quality monolayered MoS2 grains as random, diverse crystallographic orientations and various shapes are produced in the same CVD process. Here, we report the growth of high-quality MoS2 monolayers with uniform triangular shapes dominating (up to 89%) over other shapes on both SiO2/Si and sapphire substrates. The new confined-space CVD process prevents contamination and helps regulate the Mo/S ratio during the deposition. The as-grown triangular MoS2 monolayers exhibit grain sizes up to 150 μm and possess better crystalline properties and lighter n-type doping concentration than those of the monolayers grown by common CVD methods. The corresponding field effect transistor devices show high electron mobilities of 50-60 cm2 V-1 s-1 and positive threshold voltages of 21-35 V. This mild n-type behavior makes it possible to regulate the formation of excitons by back-gate voltage due to the interaction of excitons with free charge carriers in the MoS2 channel. As a result, gate-tunable photoluminescence (PL) effect, which is rarely achievable for MoS2 samples prepared by common CVD or mechanical exfoliation, is demonstrated. This study provides a simple versatile approach to fabricating monolayered crystals of MoS2 and other high-quality transition metal dichalcogenides and could lead to new optoelectronic devices based on gate-tunable PL effect.

Shape consistency of MoS2 flakes grown using chemical vapor deposition

Edge Reconstruction-Dependent Growth Kinetics of MoS2

Size and shape control of CVD-grown monolayer MoS2

Morphological Evolution of Monolayer MoS2 Single-Crystalline Flakes

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Crystal Structure and Shape Selection in the Growth of 3D Metallic Crystallites on Layered Materials: Fe on MoS2

Crystal structure and shape selection in the growth of 3D metallic crystallites on layered materials: Fe on MoS 2

Shape-Uniform, High-Quality Monolayered MoS2 Crystals for Gate-Tunable Photoluminescence

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Chemical Vapor Deposition Of Large-Size Monolayer Mose2 Crystals On Molten Glass

Pattern Stimulated CVD Growth of 2D MoS2

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Anisotropic Etching of Monolayer MoS2 Flakes for Zigzag Edges in Chemical Vapor Deposition.

Size-dependent strain-engineered nanostructures in MoS 2 monolayer investigated by atomic force microscopy

Edge Reconstruction-Dependent Growth Kinetics of MoS 2

Single Crystal Monolayer MoS2 Triangles with Wafer-Scale Spatial Uniformity by MoO3 Pre-Deposited Chemical Vapor Deposition

Effect of growth temperature on the morphology control and optical behavior of monolayer MoS2 on SiO2 substrate

Atomic MoS2 Monolayers Synthesized from a Metal-Organic Complex by Chemical Vapor Deposition.

Low-Temperature Growth of Ultrathin and Epitaxial Mo2C nanosheets via Vapor-Liquid-Solid Process

Experimental and theoretical investigation on pre-deposited precursor as growth sites for monolayer MoS 2 growth by supercritical fluid deposition

Direct CVD-growth and optoelectronic characterizations of monolayer ribbon-like MoS 2 flakes