Abstract:The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS 2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (T w ) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS 2 , N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency.

First-principles Study on Doping of Tetragonal ZnSe Monolayers

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Doping engineering of monolayer MSe (M = Ga, In) by high-throughput first-principles calculations

A Shallow Acceptor of Phosphorous Doped in MoSe<sub>2</sub> Monolayer

Monolayer Doping: A Shallow Acceptor of Phosphorous Doped in MoSe <sub>2</sub> Monolayer (Adv. Electron. Mater. 1/2020)

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

Tuning Magnetic and Optical Properties of Monolayer WSe2 by Doping C, N, P, O, S, F, and Cl: First Principles Study

Magnetism in Monolayer InSe by Nonmetal Doping: First-principles Study

Ab initio investigation of non-metal-doped ZnS monolayer

Effect of Zn-Doping on the Phase Transition Behavior and Thermoelectric Transport Properties of Cu2Se

Versatile Electronic and Magnetic Properties of Chemically Doped 2D Platinum Diselenide Monolayers: A First-Principles Study

Cluster Model For P-Type Doping Of Znse

Influence of Doping Effect on Zinc Oxide by First-Principles Studies

Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study

First-principles Study of Doping Effect on the Phase Transition of Zinc Oxide with Transition Metal Doped

Effect of non-metallic doping on the electronic structure and optical properties of ZrSe2

First-principles study of a Mn-doped In 2 Se 3 monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization

First-principles study of a Mn-doped In<sub>2</sub>Se<sub>3</sub> monolayer: Coexistence of ferromagnetism and ferroelectricity with robust half-metallicity and enhanced polarization