Abstract:The effect of X (X = O, Se, N, P, F, Cl) doping on the adsorption of Zn atoms by WS 2 was investigated based on first principles. The electronic structure and optical properties of the adsorbed system after atomic doping were calculated. It is found that the Zn atom adsorbed on the W top (T w ) site has the most stable structure. When an S atom is replaced with an X atom based on the adsorption system, where the adsorption energy decreases after doping of O, P, F, and Cl atoms compared to the undoped system, it means that each system is more stable after doping of these atoms; charge transfer shows that the adsorption system after P-atom doping the system around the Zn atom loses electrons while S-atom gains electrons, which indicates that P-atom doping is favorable for the adsorption of Zn by WS 2 , N, P-atom is introduced as p-type doping and F, Cl-atom is introduced undoped by n-type doping, and the band gap of the doped system is less than that of the undoped one. With the introduction of different dopant atoms, certain impurity energy levels are introduced into the adsorption system. The prohibited bandwidth around the Fermi energy level reduces the density of states, causing the doped system's density of states to shift to lower energies, among which the shifts of N, P, F, and Cl are more pronounced. The P-doped adsorption system shows a new peak near the energy of − 11 eV. In addition, the study of optical properties showed that the peak reflections of both doped and non-doped systems adsorbing Zn atoms appeared in the ultraviolet region; the absorbance coefficient of the doped system is moved in the lower energy direction and red-shifted after atom doping; in addition, the absorption coefficients and reflectance of the P, Se doped systems are enhanced in the wavelength range of 200–300 nm compared with that before doping, the dielectric function and CBM and VBM positions were also calculated further indicating the potential of Se-doped systems in improving photocatalytic efficiency.

Cluster Model For P-Type Doping Of Znse

Structures, Stabilities, and Magnetic Properties of Cu-doped ZnnOn (n = 3, 9, 12) Clusters: A Theoretical Study

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

The effect of electronic orbital interactions on p-type doping tendency in ZnO series: First-principles calculations

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Breakthrough of the P-Type Doping Bottleneck in Zno by Inserting an Ultrathin Znx (X = S, Se and Te) Layer Doped with N-X or Ag-Zn

Thermoelectric Properties of Strained -Cu<sub>2</sub>Se

Effect of Zn-Doping on the Phase Transition Behavior and Thermoelectric Transport Properties of Cu2Se

Influence of Group-IVA Doping on Electronic and Optical Properties of ZnS Monolayer: A First-Principles Study

p-Type nitrogen doped ZnSe epilayers by ionized cluster beam epitaxy

A Comparative Study of Electronic, Optical, and Thermoelectric Properties of Zn-Doped Bulk and Monolayer SnSe Using Ab Initio Calculations

First-Prinicples Study of Mn-N Co-Doped P-Type Zno

Nonmetal-Metal Transition In Zn-N (N=2-20) Clusters

Adsorption of Zn atoms by monolayer WS2 doped with different atoms X (X = O, Se, N, P, F, Cl): first principles study

Thermoelectric power factor of pure and doped ZnSb via DFT based defect calculations

Carbon Clusters in N-doped ZnO by Metal-Organic Chemical Vapor Deposition

The Thermoeletric Performance of Nanoporous SnSe Assembled by Hollow Cage Cluster

Structural, Electronic, and Magnetic Properties of Manganese-Doped Zn12o12 Clusters: A First-Principles Study

Structural, electronic, and magnetic properties of ZnTe doped with transition metal Mn

Regulating the dopant clustering in LiZnAs based diluted magnetic semiconductor