Coupling of Metallurgical Method to Remove Impurities in Solar Grade Polycrystalline Silicon

Li Peng-Ting,Wang Kai,Jiang Da-Chuan,Ren Shi-Qiang,Tan-Yi,An Guang-Ye,Zhang Lei,Guo Xiao-Liang,Wang Feng
DOI: https://doi.org/10.15541/jim20160324
IF: 1.292
2017-01-01
Journal of Inorganic Materials
Abstract:Preparation of 6N grade polycrystalline silicon materials using raw materials of industrial silicon was explored by medium melting, directional solidification and electron beam melting. The contents of impurities B and P in the samples are both lower than 0.20 ppmw, while the total content of metal impurity (TM) is less than 0.23 ppmw. During the process of removing B by medium melting, a large proportion of Al and Ca is simultaneously removed through the redox reaction. During the process of electron beam melting, volatile impurities including P, Al and Ca are further effectively removed by using saturated vapor pressure. Meanwhile, other metal impurities are removed by decreasing beam power, which induces the occurrence of directional solidification. Coupling of metallurgical methods reduces the purification process of polycrystalline silicon, and provides the technical support for continuous arid large-scale production.
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