PURIFICATION AND CHARACTERIZATION OF METALLURGICAL GRADE SILICON BY THREE-LAYER ELECTROREFINING

Jie Li,Jianfeng Yan,Yanqing Lai,Zhongliang Tian,Ming Jia,Jiguang Yi
DOI: https://doi.org/10.19912/j.0254-0096.2010.08.025
2010-01-01
Abstract:A creative and simple three-layer method and apparatus were developed for electrorefining of silicon for solar cells. According to the larger liquid electrode reactive surface, high current density was possible during electrorefining and current efficiency above 95% was obtained with optimum K 2SiF 6 concentration of 10wt%-15wt%. Two typical deposited morphologies were found for coherent layer and osteoporosis layer, and around 100 μm deposited silicon particles were found in electrolyte. Furthermore, with increasing operation time and current density, a larger size silicon ball of 2 cm was yielded by re-combination of silicon particles. The ICP-AES analysis indicates that refined silicon shows a remarkable reduction of B and P concentration, from 12.7 to 2.4 mg/kg and 98.6 to 4.3 mg/kg, respectively.
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