Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
Xiaozhi Xu,Zhihong Zhang,Jichen Dong,Ding Yi,Jingjing Niu,Muhong Wu,Li Lin,Rongkang Yin,Mingqiang Li,Jingyuan Zhou,Shaoxin Wang,Junliang Sun,Xiaojie Duan,Peng Gao,Ying Jiang,Xiaosong Wu,Hailin Peng,Rodney S. Ruoff,Zhongfan Liu,Dapeng Yu,Enge Wang,Feng Ding,Kaihui Liu
DOI: https://doi.org/10.1016/j.scib.2017.07.005
IF: 18.9
2017-08-01
Science Bulletin
Abstract:A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20min, of a graphene film of (5×50)cm<sup>2</sup> dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(111) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(111) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(111) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> at 4K and room temperature sheet resistance of ∼230Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.
multidisciplinary sciences