China Silicon Photomultiplier Technology

N. D'Ascenzo,V. Saveliev,Q. Xie

DOI: https://doi.org/10.1109/ipcon.2016.7831182

2016-01-01

Abstract:The group of the Huazhong University of Science and Technology developed the technology of the Silicon Photomultiplier on the basis of standard CMOS technology, produced on the CMOS chinese facility. The performance of the SiPM is presented with detailed analysis, particularly the single photon spectrum.

What problem does this paper attempt to address?

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Chen Yuan,Xu Zhihai,Feng Huajun

DOI: https://doi.org/10.1109/IST.2009.5071592

2009-01-01

Abstract:A CMOS image sensor based on standard CMOS process which can image the monochromatic spectrum image was developed. It took the advantage of the penetration depth differences of monochromatic light in silicon. Through the usage of double junctions photodiode which can sense short wavelength and long wavelength illumination simultaneously, we got the final device response which increase monotonically with the wavelength, and the wavelength can be known through this monotonicity. First we introduced the basic principle of the device, then ideas in pixel design and array readout circuitry were given, finally we measured the manufactured device, the QEs of the device and the monotonic relationship between the device and the wavelength of the monochromatic spectrum were given.
Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

Nicola D'Ascenzo,Werner Brockherde,Stefan Dreiner,Alexander Schwinger,Andrei Schmidt,Qingguo Xie

DOI: https://doi.org/10.1109/jeds.2017.2771145

2017-01-01

IEEE Journal of the Electron Devices Society

Abstract:The possibility to design a silicon photomultiplier (SiPM) using standard CMOS processes represents the frontier of current low photon flux detectors. It allows an integrated development of both sensor and intelligent read-out electronics on the same technology line and enables to create intelligent devices with on-chip signal processing. We report the design and characterization of an SiPM composed of 20 x 20 microcells with size 50 x 50 mu m(2). The device exhibits 200-kHz/mm(2) dark rate, 10% cross talk probability, 1.5% afterpulsing probability, and 5.35 x 10(6) intrinsic gain at 29-V operational voltage. It is obtained at a 0.35-mu m CMOS technology node, which is compatible with the development of integrated electronics. In order to verify the potential application of the device to optical and radiation detection systems, we measure its photon detection efficiency and its response to LED light and scintillation light from an LySO crystal.
Study of Silicon Photomultipliers and Applications

N. D'Ascenzo,V. Saveliev,L. Wang,D. Xi,Q. Xie

DOI: https://doi.org/10.1117/12.2053271

2014-01-01

Abstract:The Silicon Photomultiplier (SiPM) represents a new step in the development of the modern silicon based detection structures in the area of low photon flux detection. The high intrinsic gain obtained in the detecting structure is responsible of the digital signal nature of the SiPM at the elementary cell level. In this paper the study and development of SiPM detection structures is shown, for the specific application to the read out of scintillation light in high energy physics and Nuclear Medicine.
Characterization of Silicon Photomultipliers for PET Imaging

Qingguo Xie,Chien-Min Kao,Karen Byrum,Gary Drake,Alexandre Vaniachine,Robert G. Wagner,Victor Rykalin,Chin-Tu Chen

DOI: https://doi.org/10.1109/nssmic.2006.356059

2006-01-01

Abstract:The Silicon Photomultiplier (SiPM) is a novel photodetector being developed for high energy physics applications. SiPM is attractive for PET imaging because it is compact; provides high gain at low voltage; is insensitive to magnetic fields; has a fast timing response; and is potentially inexpensive and CMOS-technology compatible. Researchers have characterized SiPM performance mostly in areas relevant to high-energy physics and astrophysics applications, with some findings demonstrating the potential usefulness of SiPM in positron emission tomography (PET) imaging. Using our photodetector characterization test-stand equipped with a 20 GSps sample rate and 6 GHz bandwidth oscilloscope, we have measured the gains in the range of 1-3 times 105 room temperature for SiPM samples obtained from different producers. We have measured the rising times and their standard deviations. Based on the measured dark-count rates at room temperature, we have also estimated the achievable energy resolution of SiPM in PET imaging when used with LSO and BGO scintillators.
Application of CMOS Technology to Silicon Photomultiplier Sensors

Nicola D'Ascenzo,Xi Zhang,Qingguo Xie

DOI: https://doi.org/10.3390/s17102204

IF: 3.9

2017-01-01

Sensors

Abstract:We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
Progress in the Development of Silion Photomultipliers Electrophotonic Detector Based on Nuclear Medicine Imaging

Zhao-heng XIE,Kun ZHOU,Su-ying LI,Jian TIAN,Kun YANG,Qiu-shi REN

DOI: https://doi.org/10.3969/j.issn.1674-1633.2016.09.019

2016-01-01

Abstract:The silicon photomultipliers (SiPM) is a photoelectric detector emerging in recent years and used in nuclear medicine imaging systems. It has a huge potential to substitute the traditional Photomultipliers (PMT) due to its smaller size, lower working bias voltage and magnet compatible, etc. This paper introduced the relevant theories about SiPM firstly. Then, the SiPM production process were emphasized in detail, and the characteristic as well as performance of different production process was discussed subsequently. Furthermore, different kinds of front-end readout ASIC (Application Specific Integrated Circuits) for SiPM, which were designed for different use, together with their electronic performance were enumerated. Finally, the application of SiPM in PET, PET/MR was demonstrated and future development of SiPM was also discussed.
Demonstration of a Silicon Photomultiplier with Bulk Integrated Quenching Resistors on Epitaxial Silicon

G.Q. Zhang,X.B. Hu,C.Z. Hu,D.P. Yin,K. Liang,R. Yang,D.J. Han

DOI: https://doi.org/10.1016/j.nima.2010.04.040

2010-01-01

Abstract:In this paper we present the experimental results of a silicon photomultiplier (SiPM) with bulk integrated quenching resistors on epitaxial silicon. Compared with existing SiPM with polysilicon quenching resistors on the surface or with MRS structure, it has potential advantages of high photon detection efficiency (PDE) while retaining a large micro-cell density and the fabrication process is also simplified. The SiPM with the micro-cell density up to 104/mm2 and the PDE up to 25.6% is demonstrated. The characteristics of dark count rate, single photon detection capability, gain, optical crosstalk and PDE have been investigated and discussed.
Silicon Photomultipliers with Area Up to 9 Mm2 in a 0.35-$\Mu$ M CMOS Process

Xiao Liang,Nicola D'Ascenzo,Werner Brockherde,Stefan Dreiner,Andrei Schmidt,Qingguo Xie

DOI: https://doi.org/10.1109/jeds.2019.2893802

2019-01-01

IEEE Journal of the Electron Devices Society

Abstract:Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out strategies. In this paper, we investigate the scalability of a 0.35- $\mu$ m CMOS process to large area devices. We report the design and characterization of SiPMs with a total area of 1, 4, and 9 mm2. Cross talk, photon detection efficiency at 420 nm, gain at 2.5 V overvoltage and breakdown voltage temperature coefficient do not depend on the total area of the sensor and are 10%, 35%, $2.5 \times 10^{6}$ , and and 35 mV/K, respectively. The dark count rate scales with the total area of the device as 180 kHz/mm2 The total output capacitance, the decay time of the single photon signal, and the single photon time resolution depend on the area of the device. We obtain a capacitance of 66.9, 270.2, and 554.0 pF, a decay time of (27.1±0.1) ns, (50.8±0.1) ns, and (78.2±0.1) ns and a single photon time resolution of (77.97±0.51) ps, (201.67 ± 0.98) ps, and (282.28 ± 0.86) ps for the 1, 4, and 9 mm2 SiPMs, respectively.
Performance Evaluation of the Chinese JOINBON SiPM for Radiation Detection Systems

N. D'Ascenzo,L. Wang,X. Zhang,Qingguo Xie

DOI: https://doi.org/10.1109/nssmic.2018.8824764

2018-01-01

Abstract:JOINBON Ltd. recently released in the market a novel Silicon Photomultiplier (SiPM). In this paper we perform for the first time to our knowledge the characterization of these sensors and we verify their possible application to radiation detectors. When reading out the scintillation light of LySO crystals, we measured an energy resolution of 40% and 11% in response to respectively 65 keV and 511 keV γ-rays. The novel SiPM is obtained at a CMOS technology node and is thus compatible with the development of integrated electronics on chip.
Silicon Photomultiplier with Lateral Bulk-Si Quenching Resistors

Fei Sun,Ning Duan,Guo-Qiang Lo

DOI: https://doi.org/10.1109/led.2013.2250900

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:A new structure of silicon photomultiplier (SiPM) is presented, where lateral bulk-Si resistors was introduced to replace the conventional poly-Si quenching resistors. The replacement can not only eliminate the poly-Si related fabrication process, but also greatly reduce the area of metal wires. Thus the fill factor of the device can be increased noticeably. Furthermore, due to the separation of the contact region and the active region, the quantum efficiency of the device can also be improved, especially for light with visible or ultraviolet wavelengths. The functionality of the device proposed and its performance improvements have been confirmed by numerical simulation. The quantum efficiency at 300nm wavelength increases from 20% to 86%. Therefore, SiPM devices with very high photon detection efficiency will be very likely to be achieved.
Advance in Silicon Photomultiplier for All-Digital Positron Emission Tomography

HU Wentao,LAO Hui,QIU Ao,XIE Qingguo

DOI: https://doi.org/10.15953/j.ctta.2024.015

2024-01-01

Abstract:In recent years, silicon photomultipliers (SiPMs) have emerged as preferred photoelectric conversion devices in positron emission tomography (PET) due to their outstanding performance. SiPMs possess single-photon resolution capability and time resolution below 100 ps, enabling precise photon arrival time measurements. These advances paved the way for emerging applications such as time-of-flight PET (TOF-PET), photon counting CT, and positron emission lifetime imaging, presenting new challenges to SiPM performance, the advancing of which to their physical limits has become a key focus area in next-generation SiPM research. In traditional SiPM architectures, signal processing and analog-to-digital conversion introduce noise and degrade time performance, thereby limiting the full SiPM potential. With the recent and rapid development of semiconductor manufacturing processes, SiPMs could be manufactured on standard CMOS process nodes, which marks a significant breakthrough in the SiPM field, allowing for the integration of digital logic within SiPM devices. This advancement opens the possibility of achieving more precise time, energy, and position information within a single SiPM, thereby providing potential possibilities to push SiPMs to their performance limits. In this study, we reviewed the development history, working principles, and performance parameters of SiPMs. We analyzed the limitations of traditional SiPMs, outlined key aspects of digital SiPM research, and introduced various current digital SiPM architectures. Finally, we summarized and anticipated key technologies in digital SiPMs.
Performance Test of Different Silicon Photomultipliers for the 6lif:Zns(ag) Based Neutron Detectors of CSNS

C. Huang,B. Tang,Q. Yu,Z. Yao,Z. J. Sun,M. J. Tang,J. J. Jiang,X. J. Cai,X. P. Yue,S. H. Zhou,S. J. Chen,X. K. Wang,H. Xu,Y. F. Wang,Y. T. Liu,H. Y. Teng

DOI: https://doi.org/10.1088/1748-0221/17/12/t12008

2022-01-01

Journal of Instrumentation

Abstract:The China Spallation Neutron Source (CSNS) is a large scientific facility whose main aim is to support multidisciplinary research on material characterization using neutron scattering. Twenty neutron spectrometers will be built as multidisciplinary platforms for scientific research by national institutions, universities, and industry. Scintillator neutron detectors for the spectrometers under construction have recently been developed using silicon photomultipliers (SiPMs) for the readout. This paper studies the characteristics of three candidate SiPMs, including the breakdown voltage, gain, temperature coefficient, dark count rate, and radiation tolerance. Two measurement platforms were built to evaluate each SiPM. We summarize the results from our analysis of laboratory tests and beam test data to characterize the performance of the SiPMs. The MicroFJ-30035-TSV SiPM manufactured by the SensL Corporation is chosen as the best SiPM for the scintillator detectors at CSNS.
Study of Silicon Photonics Based on Standard CMOS Foundry

Jianyi Yang,Yong Zhao,Chen Qiu,Wanjun Wang,Guomin Jiang,Yinlei Hao,Xiaoqing Jiang

DOI: https://doi.org/10.1117/12.870406

2010-01-01

Abstract:Silicon photonics can found applications in optical interconnects and optical signal processing. Recent years, silicon photonics was developed rapidly. In this paper, we report our research work on silicon photonics. Based on the standard CMOS foundry, we studied the silicon waveguides and related photonic components.
Highly Efficient Silicon Photomultiplier for Positron Emission Tomography Application

Fei Sun,Ning Duan,Guo-Qiang Lo

DOI: https://doi.org/10.5281/zenodo.1087676

2013-01-01

Abstract:A silicon photomultiplier (SiPM fabricated and characterized. The SiPM was (Separation of Absorption, Charge and Multipl which was optimized for blue light detection positron emission tomography (PET). The achieved high geometric fill factor of 64% and a low brea about 22V, while the temperature dependence of b is only 17mV/°C. The gain and photon detection device achieved were also measured under illum 405nm and 460nm wavelengths. The gain of the de of 10. The photon detection efficiency up to 60% under 1.8V overvoltage. Keywords—Photon Detection Efficiency, P Tomography, Silicon Photomultiplier.
SiPM Electro-Optical Detection System Noise Suppression Method

Xiangli Bi,Suhui Yang,Tao Hu,Yiheng Song

DOI: https://doi.org/10.1117/12.2071935

2014-01-01

Abstract:In this paper, the single photon detection principle of Silicon Photomultipliers (SiPM) device is introduced. The main noise factors that infect the sensitivity of the electro-optical detection system are analyzed, including background light noise, detector dark noise, preamplifier noise and signal light noise etc. The Optical, electrical and thermodynamic methods are used to suppress the SiPM electro-optical detection system noise, which improved the response sensitivity of the detector. Using SiPM optoelectronic detector with a even high sensitivity, together with small field large aperture optical system, high cutoff narrow bandwidth filters, low-noise operational amplifier circuit, the modular design of functional circuit, semiconductor refrigeration technology, greatly improved the sensitivity of optical detection system, reduced system noise and achieved long-range detection of weak laser radiation signal. Theoretical analysis and experimental results show that the proposed methods are reasonable and efficient.
A Digital Silicon Photomultiplier

Inge Diehl,Finn Feindt,Karsten Hansen,Stephan Lachnit,Frauke Poblotzki,Daniil Rastorguev,Simon Spannagel,Tomas Vanat,Gianpiero Vignola

2024-02-20

Abstract:Silicon Photomultipliers (SiPMs) are state-of-the-art photon detectors used in particle physics, medical imaging, and beyond. They are sensitive to individual photons in the optical wavelength regime and achieve time resolutions of a few tens of picoseconds, which makes them interesting candidates for timing detectors in tracking systems for particle physics experiments. The Geiger discharges triggered in the sensitive elements of a SiPM, Single-Photon Avalanche Diodes (SPADs), yield signal amplitudes independent of the energy deposited by a photon or ionizing particle. This intrinsically digital nature of the signal motivates its digitization already on SPAD level.

Instrumentation and Detectors
New silicon photomultiplier structure promises more efficient photon detection

Fei Sun,Guo-Qiang Lo

2014-01-01

Laser focus world

Abstract:To improve the cell fill factor of SiPM devices, vertical bulk-Si quenching resistors are embedded into SiPM cells to replace the conventional poly-Si resistors.
A Novel Segmented SiPM Combined With Amplifiers on One Chip With Improved Single-Photon Timing Resolution in 0.35-μm CMOS

Jonathan Preitnacher,Sergei Ageev,Walter Hansch

DOI: https://doi.org/10.1109/tns.2024.3363228

IF: 1.703

2024-03-19

IEEE Transactions on Nuclear Science

Abstract:We present a novel silicon photomultiplier (SiPM) device integrated with high-speed two-transistor amplifier circuits on a single chip using standard 0.35- complementary metal—oxide semiconductor (CMOS) technology. These amplifiers are configured as current followers to reduce the output capacitance and improve the amplitude and slew rate of the output signal. The efficiency of this solution is approximately proportional to the size of the SiPM. Measurement results show that the single-photon timing resolution (SPTR) can be enhanced for the segmented SiPM with integrated amplifiers compared with a conventional analog CMOS SiPM that is designed with the same architecture but without an integrated amplifier. The proposed mm 2 SiPM, featuring integrated circuitry, achieves an SPTR of 117 ±6 ps. In contrast, the conventional analog CMOS SiPM exhibits an SPTR of 221 ±6 ps using the slow output and 155 ±6 ps using the fast output. In addition to timing resolution, we characterize the CMOS SiPM device in terms of dark count rate (DCR), correlated delayed noise (CDN), gain, crosstalk (CT), and PDE. The device exhibits a high gain of and low CT of 2.5%, but has a DCR of 2.8 Mhz/mm 2. The PDE, excluding CT and CDN, is 10.9% ± 0.3%.

engineering, electrical & electronic,nuclear science & technology
Current Status and Development of CMOS SiPM for Scintillator-Based Radiation Detectors Toward All-Digital Sensors [Invited]

Nicola 'Ascenzo,Wentao Hu,Hui Lao,Yuexuan Hua,Bo Zhang,Lei Fang,Daoming Xi,Rui Zheng,Ao Qiu,Emanuele Antonecchia,Yiqing Ling,Yuqing Liu,Yan Li,Hang Yu,Peng Xiao,Qingguo Xie

DOI: https://doi.org/10.3788/col202422.020021

IF: 2.56

2024-01-01

Chinese Optics Letters

Abstract:Modern scintillator-based radiation detectors require silicon photomultipliers (SiPMs) with photon detection efficiency higher than 40% at 420 nm, possibly extended to the vacuum ultraviolet (VUV) region, single-photon time resolution (SPTR) < 100 ps, and dark count rate (DCR) < 150 kcps/mm(2) . To enable single-photon time stamping, digital electronics and sensitive microcells need to be integrated in the same CMOS substrate, with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm x 4 mm. This is challenging due to the increasing doping concentrations at low CMOS scales, deep-level carrier generation in shallow trench isolation fabrication, and power consumption, among others. The advances at 350 and 110 nm CMOS nodes are benchmarked against available SiPMs obtained in CMOS and commercial customized technologies. The concept of digital multithreshold SiPMs with a single microcell readout is finally reported, proposing a possible direction toward fully digital scintillator-based radiation detectors.
Advanced Back-Illuminated Silicon Photomultipliers With Surrounding P+ Trench

Haifan Hu,Ying Wang,Penghao Liu,Xiubo Qin,Junpeng Fang,Hongming Zhao,Zhe Ma,Jiatong Wei

DOI: https://doi.org/10.1109/jsen.2022.3188692

IF: 4.3

2022-08-15

IEEE Sensors Journal

Abstract:This study conducted the TCAD simulation of an advanced back-illuminated silicon photomultipliers (BI-SiPM) device. This BI-SiPM structure with pixels was surrounded by a p+ trench, which conducted the p+ implant region available on the surface toward the back side. The removal of the metal layer from the incident SiPM surface reduced the blocking of incident light and improved the fill factor of single pixels. Therefore, the photon detection efficiency of BI-SiPM was improved to approximately 70% when the bias voltage was 5 V. The TCAD device simulations were performed to study this BI-SiPM structure, and the quenching process based on Mixedmode emulator was investigated to introduce the BI-SiPM pixel structure into a SPICE circuit. The results indicated that the proposed design could improve the uniform distribution of the electric field and avalanche triggering probability on a photon illuminating surface and increase FF, without affecting the crosstalk between pixels. Moreover, the design consideration of manufacturing process flow for BI-SiPM was proposed.

engineering, electrical & electronic,instruments & instrumentation,physics, applied

China Silicon Photomultiplier Technology

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Design and Characterization of a Silicon Photomultiplier in 0.35- ${\mu }\text{m}$ CMOS

Study of Silicon Photomultipliers and Applications

Characterization of Silicon Photomultipliers for PET Imaging

Application of CMOS Technology to Silicon Photomultiplier Sensors

Progress in the Development of Silion Photomultipliers Electrophotonic Detector Based on Nuclear Medicine Imaging

Demonstration of a Silicon Photomultiplier with Bulk Integrated Quenching Resistors on Epitaxial Silicon

Silicon Photomultipliers with Area Up to 9 Mm2 in a 0.35-$\Mu$ M CMOS Process

Performance Evaluation of the Chinese JOINBON SiPM for Radiation Detection Systems

Silicon Photomultiplier with Lateral Bulk-Si Quenching Resistors

Advance in Silicon Photomultiplier for All-Digital Positron Emission Tomography

Performance Test of Different Silicon Photomultipliers for the 6lif:Zns(ag) Based Neutron Detectors of CSNS

Study of Silicon Photonics Based on Standard CMOS Foundry

Highly Efficient Silicon Photomultiplier for Positron Emission Tomography Application

SiPM Electro-Optical Detection System Noise Suppression Method

A Digital Silicon Photomultiplier

New silicon photomultiplier structure promises more efficient photon detection

A Novel Segmented SiPM Combined With Amplifiers on One Chip With Improved Single-Photon Timing Resolution in 0.35-μm CMOS

Current Status and Development of CMOS SiPM for Scintillator-Based Radiation Detectors Toward All-Digital Sensors [Invited]

Advanced Back-Illuminated Silicon Photomultipliers With Surrounding P+ Trench