Effective Optimization of Surface Passivation on Porous Silicon Carbide Using Atomic Layer Deposited Al2O3

Weifang Lu,Yoshimi Iwasa,Yiyu Ou,Daiki Jinno,Satoshi Kamiyama,Paul Michael Petersen,Haiyan Ou

DOI: https://doi.org/10.1039/c6ra27281a

IF: 4.036

2017-01-01

RSC Advances

Abstract:Significant enhancement of photoluminescence in ALD Al2O3 passivated porous 6H-SiC.

What problem does this paper attempt to address?

ation of surface passivation on porous silicon carbide using atomic layer deposited Al 2 O 3

Weifang Lu,Yoshimi Iwasa,Yiyu Ou,Daiki Jinno,Satoshi Kamiyama,Paul Michael Petersena,Haiyan Ou

2017-01-01

Abstract:Porous silicon carbide (B–N co-doped SiC) produced by anodic oxidation showed strong photoluminescence (PL) at around 520 nm excited by a 375 nm laser. The porous SiC samples were passivated by atomic layer deposited (ALD) aluminum oxide (Al2O3) films, resulting in a significant enhancement of the PL intensity (up to 689%). The effect of thickness, annealing temperature, annealing duration and precursor purge time on the PL intensity of ALD Al2O3 films was investigated. In order to investigate the penetration depth and passivation effect in porous SiC, the samples were characterized by X-ray photoelectron spectroscopy (XPS) and time-resolved PL. The optimized passivation conditions (20 nm Al2O3 deposited at 160 C with purge time of 20 s, followed by an annealing for 5 min at 350 C) for porous SiC were achieved and the results indicate that surface passivation by ALD Al2O3 thin films is a very effective method to enhance the luminescence efficiency of porous SiC.
Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Wei Fang Lu,Yi Yu Ou,Valdas Jokubavicius,Ahmed Fadil,Mikael Syväjärvi,Volker Buschmann,Steffen Rüttinger,Paul Michael Petersen,Hai Yan Ou

DOI: https://doi.org/10.4028/www.scientific.net/msf.858.493

2016-01-01

Materials Science Forum

Abstract:The influence of thickness of atomic layer deposited Al2O3 films on nanotextured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These result show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
Surface Passivation of Nano-Textured Fluorescent Sic by Atomic Layer Deposited Tio2

Weifang Lu,Yiyu Ou,Valdas Jokubavicius,Ahmed Fadil,Mikael Syvajarvi,Paul Michael Petersen,Haiyan Ou

DOI: https://doi.org/10.1088/0031-8949/91/7/074001

2016-01-01

Physica Scripta

Abstract:Nano-textured surfaces have played a key role in optoelectronic materials to enhance the light extraction efficiency. In this work, morphology and optical properties of nano-textured SiC covered with atomic layer deposited (ALD) TiO2 were investigated. In order to obtain a high quality surface for TiO2 deposition, a three-step cleaning procedure was introduced after RIE etching. The morphology of anatase TiO2 indicates that the nano-textured substrate has a much higher surface nucleated grain density than a flat substrate at the beginning of the deposition process. The corresponding reflectance increases with TiO2 thickness due to increased surface diffuse reflection. The passivation effect of ALD TiO2 thin film on the nano-textured fluorescent 6H-SiC sample was also investigated and a PL intensity improvement of 8.05% was obtained due to the surface passivation.
Improved Passivation Depth of Porous Fluorescent 6H-Sic with Si/C Faces Using Atomic Layer Deposition

Kosuke Yanai,Weifang Lu,Yoma Yamane,Keita Kodera,Yiyu Ou,Haiyan Ou,Satoshi Kamiyama,Tetsuya Takeuchi,Motoaki Iwaya,Isamu Akasaki

DOI: https://doi.org/10.35848/1347-4065/ac43cd

IF: 1.5

2021-01-01

Japanese Journal of Applied Physics

Abstract:We investigated the effects of different growth facets of 6H-SiC and different voltage waveforms on the porous structure and luminescence properties. The structure formed on the surface after anodic etching significantly changed because of the difference in the growth plane, whereas dendritic and columnar pores were observed inside the Si- and C-face samples. These large porous structures were shown to promote the penetration depth of the atomic-layer-deposited Al2O3 films, and a recorded passivation depth of 30 μm layer was confirmed in C-face porous SiC. From the results using a fluorescence microscope and photoluminescence spectra measurement, it was concluded that the pulsed-voltage etching was preferable for fabricating uniform porous structures compared with the constant-voltage etching. However, the enhancement of the luminescence intensity needs to be further improved to realize high luminescent efficiency in porous fluorescent SiC.
Fabrication and Surface Passivation of Porous 6H-Sic by Atomic Layer Deposited Films

Weifang Lu,Yiyu Ou,Paul Michael Petersen,Haiyan Ou

DOI: https://doi.org/10.1364/ome.6.001956

2016-01-01

Optical Materials Express

Abstract:Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6H-SiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching.
Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

M. Salem,M. Ben Rabha,B. Bessais,M. A. Elkhakani,M. Gaidi

DOI: https://doi.org/10.1007/s10854-013-1518-2

2013-10-12

Abstract:We report on a dual passivation approach of monocrystalline-silicon (c-Si), which combines porous silicon (PS) treatment and pulsed laser deposition (PLD) of Al2O3 ultrathin layer. Al2O3 ultrathin films were deposited, under an oxygen background pressure of 10 mTorr. In this work we demonstrate that the dual treatment Al2O3/PS provide excellent passivation quality of c-Si surfaces. Surface passivation and reflectivity properties are investigated before and after heat treatment at 700 °C. The level of surface passivation is quantified using photoconductance and Fourier-transform infra-red absorption techniques. X-ray diffraction analysis suggested that the heat treatment leads to an average crystallite size decrease which help the diffusion of the Al2O3 NPs along the wafer surface. As a result, the effective minority carrier lifetime increases from 2 to 7 μs. Our results demonstrate that this dual treatment not only provides strong passivation of the c-Si substrate but decreases also the total surface reflectivity at 500 nm (from 28 % for untreated c-Si samples to ∼7 % for Al2O3/PS treated ones).

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Optimization of the Surface Structure on Black Silicon for Surface Passivation

Xiaojie Jia,Chunlan Zhou,Wenjing Wang

DOI: https://doi.org/10.1186/s11671-017-1910-6

Nanoscale Res Lett

Abstract:Black silicon shows excellent anti-reflection and thus is extremely useful for photovoltaic applications. However, its high surface recombination velocity limits the efficiency of solar cells. In this paper, the effective minority carrier lifetime of black silicon is improved by optimizing metal-catalyzed chemical etching (MCCE) method, using an Al2O3 thin film deposited by atomic layer deposition (ALD) as a passivation layer. Using the spray method to eliminate the impact on the rear side, single-side black silicon was obtained on n-type solar grade silicon wafers. Post-etch treatment with NH4OH/H2O2/H2O mixed solution not only smoothes the surface but also increases the effective minority lifetime from 161 μs of as-prepared wafer to 333 μs after cleaning. Moreover, adding illumination during the etching process results in an improvement in both the numerical value and the uniformity of the effective minority carrier lifetime.
Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Meng Xie,Xuegong Yu,Xiaodong Qiu,Deren Yang

DOI: https://doi.org/10.1016/j.solmat.2018.11.034

IF: 6.9

2018-01-01

Solar Energy Materials and Solar Cells

Abstract:Negatively charged ultrathin Al2O3 film deposited by atomic layer deposition (ALD) technique has been widely applied in photovoltaic industry because of its excellent passivation effect on both p and n type silicon surfaces. In this study, we have observed an enhancement of the Al2O3 passivation on the surface of p type gallium doped Czochralski silicon under illumination, with a rapid effective lifetime increase by similar to 90%. However, such passivation effect is not stable in dark circumstance at room temperature, with a slow effective lifetime degradation to the initial value. Furthermore, we have confirmed that the enhancement process under illumination and the degradation process in dark are both thermally activated with activation energies of 0.31 +/- 0.02 eV and 0.50 +/- 0.07 eV, respectively. The capacitance-voltage (C-V) measurements based on the Al/Al2O3/p-Si capacitor demonstrate that the negative charge at the interface between ultrathin Al2O3 film and p-Si substrate increases from 7.4 x 10(11) cm(-2) to 9.1 x 10(12) cm(-2) after 1 h's illumination and then returns to the initial value in dark at room temperature after 3 h. This light induced enhancement effect is wavelength dependent and the cut-off wavelength is in the range of 780-800 nm. Based on these results, we have proposed a model to explain the light-soaking enhanced passivation of Al2O3 on crystalline silicon surface based on a charge trapping and detrapping process.
Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation

Kosuke Yanai,Weifang Lu,Yoma Yamane,Dong-Pyo Han,Haiyan Ou,Motoaki Iwaya,Tetsuya Takeuchi,Satoshi Kamiyama,Isamu Akasaki

DOI: https://doi.org/10.3390/nano10102075

IF: 5.3

2020-10-21

Nanomaterials

Abstract:This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside the fluorescent SiC substrates, due to the different etching rates at the terrace and the large step bunches. Large, dendritic porous structures were formed as the etching process continued and the porous layer thickened. Under the conditions of low hydrofluoric acid (HF) concentration, the uniformity of the dendritic porous structures through the entire porous layer was considerably improved compared with the conditions of high HF concentration. The resulting large uniform structure offered a sizable surface area, and promoted the penetration of atomic layer-deposited (ALD) Al2O3 films (ALD–Al2O3). The emission intensity in the porous fluorescent SiC was confirmed via photoluminescence (PL) measurements to be significantly improved by a factor of 128 after ALD passivation. With surface passivation, there was a clear blueshift in the emission wavelength, owing to the effective suppression of the non-radiative recombination rate in the porous structures. Furthermore, the spatial uniformity of emitted light was examined via PL mapping using three different excitation lasers, which resulted in the observation of uniform and distinctive emissions in the fluorescent SiC bulk and porous areas.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

Moez Salem,Amel Haouas,Bechir Mahmoud Yahmadi,Hajar Ghannam,Abdullah Almohammedi

DOI: https://doi.org/10.1007/s11082-024-07612-z

IF: 3

2024-10-11

Optical and Quantum Electronics

Abstract:This paper presents the preparation of Al doped ZnO (Al:ZnO) thin layers, utilizing a direct co-precipitation method and subsequent application onto silicon (Si) surfaces through spin-coating. The investigation systematically explores the influence of Al doping on crystallinity and photoelectrochemical (PEC) characteristics. AFM and XRD are examples of sophisticated methods used to evaluate the crystal structure and surface morphology. Moreover, FTIR and photoconductance were used to examine surface passivation and anti-reflexion in ZnO films that were both undoped and doped with Al. Significantly, the introduction of aluminum lead to a noteworthy augmentation of the effective minority carrier lifetime, escalating from 2 to 106 μs. Additionally, the reflexion percentage at λ = 600 nm exhibited a substantial decrease from 30% to around 5% upon the insertion of Al-doped ZnO on Si surfaces.

engineering, electrical & electronic,optics,quantum science & technology
Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Jun Chen,Peng Wang,Can Liu,Guoqiang Yu,Tao Wang,Xiaogang Wu,Lingbo Xu,Ping Lin,Xiaoping Wu,Xiaorong Huang,Yi Zhao,Xuegong Yu,Can Cui

DOI: https://doi.org/10.1002/pssr.202100267

2021-08-11

Abstract:In this work, a novel method of preparing ultrathin aluminum oxide films by rapid thermal annealing (RTA) treatment for effective silicon surface passivation has been proposed. The high temperature RTA processing (750-825 oC) for tens of seconds in oxygen atmosphere completely converts the thermally evaporated aluminum metal nanofilms (1-5 nm) on crystalline silicon to aluminum oxide (Al2O3) films, with a thin SiOx layer formed at the interface between silicon and Al2O3. The generated Al2O3 film can provide superior passivation quality for silicon surface, even better than that obtained by thermal atomic layer deposition technique. Moreover, the growth kinetics of Al2O3 passivating film indicates that it is a diffusion-controlled activation process, with an energy barrier of 3.3 eV for aluminum ions diffusing across the metal/oxide interface.This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary
Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

M. Bhaisare,A. Kottantharayil,Abhishek Kumar Misra

DOI: https://doi.org/10.1109/JPHOTOV.2013.2251057

2013-04-02

IEEE Journal of Photovoltaics

Abstract:In this paper, we report on the surface passivation of crystalline silicon (c-Si) by pulsed-dc (p-dc) reactive-sputtered aluminum oxide (AlOx) films. For the activation of surface passivation, the films were subjected to post deposition annealing (PDA) in different ambients namely N2, N2 + O2, and forming gas (FG) in the temperature range of 420-520°C. The surface passivation was quantified by surface recombination velocity, which was correlated to the interface states at the silicon-dielectric interface and fixed charges in the dielectric. A good quality surface passivation with effective surface recombination velocity Seff of 41 cm · s-1 is obtained for PDA in N2 or N2 + O2 gas ambient. PDA in FG ambient at high temperature is found to degrade the passivation. The AlOx film annealed in FG ambient shows poorer thermal stability as compared with films annealed in the other two ambients. A clear path for further improvements in surface passivation quality of p-dc reactive sputter-deposited AlOx is suggested based on cross-sectional transmission electron microscopy and X-ray photoelectron spectroscopy analysis and electrical data.

Engineering,Materials Science
Effective Passivation on Si Nanocrystal Surface by Peroxide

Y. C. Cheng,W. C. Zhang,X. L. Wu,T. Qiu,G. S. Huang,G. G. Siu,Paul K. Chu

DOI: https://doi.org/10.1016/j.jcrysgro.2007.02.005

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:Using ultrasonic vibration of as-made porous silicon in water, the suspension of Si nanocrystals is prepared for exploring light-emitting properties of Si nanocrystals. By analyzing the photoluminescence (PL) property of the as-made suspension, we conclude that the observed red PL band arises from radiative recombination of carriers in the interface layer full of Si-H-x (x = 1, 2) and Si=O bonds. To effectively passivate the Si nanocrystal surface, we mixed the suspension with peroxide and then heated it. Spectral examinations show that the PL and PL excitation spectra all shift under different excitation wavelengths and at different monitoring wavelengths, respectively. This result illuminates clear evidence for the quantum confine effect of the Si nanocrystals. We suggest that the surfaces of the Si nanocrystals are covered by SiO2 after treated by peroxide, which leads to the currently observed blue PL phenomenon. (C) 2007 Elsevier B.V. All rights reserved.
Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications

Mohammed A. Almeshaal,Bilel Abdouli,Karim Choubani,Lotfi Khezami,Mohamed Ben Rabha

DOI: https://doi.org/10.1007/s12633-023-02482-8

IF: 3.4

2023-05-05

Silicon

Abstract:In this research, we experimentally and numerically demonstrate the beneficial effect of superficial porous silicon layer in the optoelectronics properties of multi-crystalline silicon. From Laser Beam Induced Current simulations, we found that the chemical composition of the porous silicon acts as a good surface passivation and a potential candidate for electronic quality and optoelectronics properties improvement. This means that the current generated by the treated silicon is 5 times higher than the reference substrate. As a result, the minority carrier diffusion length has increased by 66%. In addition to its passivation properties, the reflectance was significantly reduced to about 3% after porous silicon treatment, yielded to an efficiency improvement of 3.2% higher than the reference. The passivation and antireflection properties of superficial porous silicon layer make it a highly promising material for improving the efficiency and performance of solar cells.

materials science, multidisciplinary,chemistry, physical
In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Mengkoing Sreng,François Silva,Pere Roca i Cabarrocas

DOI: https://doi.org/10.1002/pssa.201800612

2019-01-02

physica status solidi (a)

Abstract:A degradation of crystalline silicon surface passivation provided by aluminum oxide (Al2O3) is generally observed after plasma processes, e.g., deposition of amorphous silicon nitride. To minimize such detrimental effect, a better understanding of the interaction between plasma species and the Al2O3 layer is required. Using in situ photoluminescence, the passivation quality of as‐deposited and annealed crystalline silicon wafers coated with Al2O3 grown by atomic layer deposition is characterized in real time during argon‐hydrogen plasma exposure. The photoluminescence intensity of as‐deposited samples instantly steps up after the plasma ignition, and then it gradually decreases as a function of plasma exposure time. However, only degradation of photoluminescence signal can be found if the samples are annealed prior to the plasma treatment. The interaction between vacuum UV light from plasma and different types of chemical bonds in the Al2O3 layer is proposed to explain the obtained results. Understanding the mechanisms and root cause leading to different behavior between as‐deposited and annealed samples under plasma exposure is a first step toward redesigning the process flow for better surface passivation. Using in situ photoluminescence, the passivation of as‐deposited and annealed Al2O3 coated c–Si is characterized during argon‐hydrogen plasma exposure. An increase of PL intensity, followed by a gradual degradation is observed on as‐deposited samples, while only degradation is observed on annealed ones. The interaction between UV‐plasma emission and different chemical bonds at Al2O3/c–Si interface is proposed to explain the results.
Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Cyrille Armel Sayou Ngomsi,Tamanna Joshi,Pratibha Dev

DOI: https://doi.org/10.1103/physrevmaterials.8.056202

IF: 3.98

2024-05-21

Physical Review Materials

Abstract:Spin-active defects in silicon carbide (SiC) are promising quantum light sources for realizing scalable quantum technologies. In different applications, these photoluminescent defects are often placed in a nanostructured host or close to surfaces in order to enhance the signal from the defects. However, proximity to the surface not only modifies the frequencies of the quantum emission from the defect, but also adversely affects their photostability, resulting in blinking and/or photobleaching of the defect. These effects can be ameliorated by passivating surfaces with optimal adsorbates. In this work, we explore different passivation schemes using density-functional-theory-based calculations. We show that a uniform surface passivation with either hydrogen or with mixed hydrogen/hydroxyl groups completely removes surface states from the SiC band gap, restoring the optical properties of the defects. https://doi.org/10.1103/PhysRevMaterials.8.056202 ©2024 American Physical Society

materials science, multidisciplinary
Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

S. Bakhshi,W. Schoenfeld,I. Kashkoush,Marshall Wilson,Ngwe Zin,K. Davis

DOI: https://doi.org/10.1109/PVSC.2017.8366153

2017-06-25

Abstract:Passivation quality of silicon nitride (SiNx), aluminum oxide (AlOx) and a stack of AlOx/SiNx has been investigated in the presence and absence of a thin silicon oxide (SiOx) layer formed using ozonated deionized water. Lifetime measurements show $\approx 3$ ms effective carrier lifetime $(\tau_{eff})$ for the stack of AlOx/SiNx in the presence of the oxide. Low saturation current density $(Jo)$ and interfacial trap density $(D_{it})$ confirm and explain the high $\tau_{eff}$ for this sample. The stack of AlOx/SiNx can offer excellent surface passivation because of both field-effect passivation and chemical passivation. Note that the presence of oxide also shows a crucial impact in achieving a good passivation.

Physics,Engineering,Materials Science
Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Chia-Hsun Hsu,Yun-Shao Cho,Wan-Yu Wu,Shui-Yang Lien,Xiao-Ying Zhang,Wen-Zhang Zhu,Sam Zhang,Song-Yan Chen

DOI: https://doi.org/10.1186/s11671-019-2969-z

2019-04-18

Nanoscale Research Letters

Abstract:In this study, aluminum oxide (Al2O3) films were prepared by a spatial atomic layer deposition using deionized water and trimethylaluminum, followed by oxygen (O2), forming gas (FG), or two-step annealing. Minority carrier lifetime of the samples was measured by Sinton WCT-120. Field-effect passivation and chemical passivation were evaluated by fixed oxide charge (Qf) and interface defect density (Dit), respectively, using capacitance-voltage measurement. The results show that O2 annealing gives a high Qf of − 3.9 × 1012 cm−2, whereas FG annealing leads to excellent Si interface hydrogenation with a low Dit of 3.7 × 1011 eV−1 cm−2. Based on the consideration of the best field-effect passivation brought by oxygen annealing and the best chemical passivation brought by forming gas, the two-step annealing process was optimized. It is verified that the Al2O3 film annealed sequentially in oxygen and then in forming gas exhibits a high Qf (2.4 × 1012 cm−2) and a low Dit (3.1 × 1011 eV−1 cm−2), yielding the best minority carrier lifetime of 1097 μs. The SiNx/Al2O3 passivation stack with two-step annealing has a lifetime of 2072 μs, close to the intrinsic lifetime limit. Finally, the passivated emitter and rear cell conversion efficiency was improved from 21.61% by using an industry annealing process to 21.97% by using the two-step annealing process.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
Stability Improvement of Porous Silicon Surface Structures by Grafting Polydimethylsiloxane Polymer Monolayers

B Xia,SJ Xiao,J Wang,DH Guo

DOI: https://doi.org/10.1016/j.tsf.2004.08.121

IF: 2.1

2004-01-01

Thin Solid Films

Abstract:Organic silicone, polydimethylsiloxane (PDMS), was covalently grafted onto the porous silicon (PS) surface to improve its stability to oxidation. Transmission Fourier-transform infrared (FTIR), photoluminescence (PL) and interferometric reflectance spectra have been recorded to evaluate the surface modification and the passivation effect. After modification, the porous nanostructure retained, the stability against oxidation was significantly improved and the PL still kept.

Effective Optimization of Surface Passivation on Porous Silicon Carbide Using Atomic Layer Deposited Al2O3

ation of surface passivation on porous silicon carbide using atomic layer deposited Al 2 O 3

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Surface Passivation of Nano-Textured Fluorescent Sic by Atomic Layer Deposited Tio2

Improved Passivation Depth of Porous Fluorescent 6H-Sic with Si/C Faces Using Atomic Layer Deposition

Fabrication and Surface Passivation of Porous 6H-Sic by Atomic Layer Deposited Films

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Optimization of the Surface Structure on Black Silicon for Surface Passivation

Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface

Voltage-Controlled Anodic Oxidation of Porous Fluorescent SiC for Effective Surface Passivation

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

Effective Passivation on Si Nanocrystal Surface by Peroxide

Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

Optimum surface-passivation schemes for near-surface spin defects in silicon carbide

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Stability Improvement of Porous Silicon Surface Structures by Grafting Polydimethylsiloxane Polymer Monolayers