Abstract:Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

High-Mobility Flexible Thin-Film Transistors with Zirconium-Doped Indium Oxide Channel Layer

High‐mobility Flexible Thin‐film Transistors with a Low‐temperature Zirconium‐doped Indium Oxide Channel Layer

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Low-temperature, High-Stability, Flexible Thin-Film Transistors with a Novel ScxIn1−xO3semiconductor

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Low-temperature fabrication of high performance indium oxide thin film transistors

High-performance bilayer metal-oxide thin film transistors using ultra-thin solution-processed ZrOx dielectric

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

High-Mobility and Good-Stability Thin-Film Transistors with Scandium-Substituted Indium Oxide Semiconductors

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

Low-Voltage High-Stability InZnO Thin-Film Transistor Using Ultra-Thin Solution-Processed ZrO Dielectric

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

High-Performance InTiZnO Thin-Film Transistors Deposited by Magnetron Sputtering

Flexible Dual-layer Channel Gallium-doped ZnO Thin-film Transistors Fabricated on Plastic Substrates at Room Temperature