The Microstructures and Electrical Properties of Y-doped Amorphous Vanadium Oxide Thin Films

Deen Gu,Xin Zhou,Rui Guo,Zhihui Wang,Yadong Jiang
DOI: https://doi.org/10.1016/j.infrared.2016.12.013
IF: 2.997
2016-01-01
Infrared Physics & Technology
Abstract:One of promising approaches for further improving the sensitivity of microbolometer arrays with greatly reduced pixel size is using the thermal-sensitive materials with higher performance. In this paper, Y-doped vanadium oxide (VOX) thin films prepared by a reactively sputtering process exhibit enhanced performance for the microbolometer application compared with frequently-applied VOX, thin films. Both undoped and Y-doped VOX, thin films are amorphous due to the relatively low deposition temperature. Y-doped VOX, thin films exhibit smoother surface morphology than VOX, due to the restrained expansion of particles during depositions. Y-doping increases the temperature coefficient of resistivity by over 20% for the doping level of 1.30 at%. The change rate of resistivity, after aging for 72 h, of thin films was reduced from about 15% for undoped VOX, to 2% due to the introduction of Y. Mbreover, Y-doped VOX,, thin films have a low 1/f noise level as VOX ones. Y-doping provides an attractive approach for preparing VOX, thermal-sensitive materials with enhanced performance for microbolometers. (C) 2016 Elsevier B.V. All rights reserved.
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