Thermoelectric Properties of N-Type ZrNiPb-Based Half-Heuslers

Jun Mao,Jiawei Zhou,Hangtian Zhu,Zihang Liu,Hao Zhang,Ran He,Gang Chen,Zhifeng Ren
DOI: https://doi.org/10.1021/acs.chemmater.6b04898
IF: 10.508
2017-01-01
Chemistry of Materials
Abstract:Here we investigate the half-Heusler ZrNiPb as a n-type thermoelectric material. Our results show that the n-type ZrNiPb-based materials can achieve high peak power factors, ∼50 μW cm–1 K–2, by optimally tuning the carrier concentration via Bi doping. By further Sn-alloying in Pb site, we achieve a significant reduction of lattice thermal conductivity while maintaining the power factor almost unchanged and hence noticeably improve the ZT. Our work demonstrates that n-type ZrNiPb-based half-Heuslers are promising thermoelectric materials.
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