Enhancement Of The Modulation Bandwidth For Surface Plasmon Coupled Leds For Visible Light Communication

Jiehui Li,Ahmed Fadil,Haiyan Ou,Nan Chi

DOI: https://doi.org/10.1364/CLEO_SI.2016.STu3R.2

2016-01-01

Abstract:The modulation bandwidth of surface plasmon coupled GaN-based LEDs is increased by similar to 1.2 times to 434.5 MHz compared with normal LED by applying Ag nanoparticles. These findings will help for the industrialization of VLC system.

What problem does this paper attempt to address?

Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

Jiehui Li,Pengqi Gou,Nan Chi,Haiyan Ou

DOI: https://doi.org/10.1364/ofc.2018.th2a.65

2018-01-01

Abstract:A localized surface plasma coupled LED with modulation bandwidth of 152MHz which was enhanced by 1.65 times relative to grid LED was fabricated for high-speed VLC system, while the light power increased by 1.67 times.
Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Rongqiao Wan,Liancheng Wang,Jinpeng Huang,Xiaoyan Yi,Hao-Chung Kuo,Jinmin Li

DOI: https://doi.org/10.1002/adpr.202100093

2021-09-23

Advanced Photonics Research

Abstract:Visible light communication (VLC) has attracted widespread attention for wireless communications. The popularity of GaN-based light-emitting diodes (LEDs) has also laid a solid foundation for the application of VLC. As the light source of VLC, LED's modulation bandwidth directly determines the speed of communication. Herein, reviewing progress on modulation bandwidth improvement schemes of GaN LEDs transmitter is reviewed, covering aspects from epitaxial to devices. Epitaxial approaches include c-polar facet epitaxial optimization, non/semipolar facet epitaxial growth, and chip scheme such as micro-LEDs, nano-LEDs, resonant cavity-LEDs (RC-LEDs), plasmon, and metacavity LEDs. In terms of white LEDs, approaches to tackle the slow Stokes transfer and long carrier life for conventional phosphors including new color-conversion materials (CCMs) and new energy transfer routes are reviewed. This review promotes the development of GaN-based LEDs as the transmitter for high-speed VLC.
Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Kamran Rajabi,Jiaxing Wang,Jie Jin,Yuchen Xing,Lai Wang,Yanjun Han,Changzheng Sun,Zhibiao Hao,Yi Luo,Keyuan Qian,Chien-Ju Chen,Meng-Chyi Wu

DOI: https://doi.org/10.1364/oe.26.024985

IF: 3.8

2018-01-01

Optics Express

Abstract:The GaN-based light emitting diodes (LEDs) have a great potential for visible light communication (VLC) due to their ubiquitous application in general lighting, but the modulation bandwidth of conventional c-plane LEDs is limited by carrier recombination rate in InGaN quantum wells (QWs) due to the polarization-field-induced quantum confined Stark effect (QCSE). Furthermore, the high modulation bandwidth on c-plane sapphire substrates can only be achieved at high current densities. Here, blue LEDs with ultra-thin InGaN QWs (1nm) and GaN barriers (3nm) are grown on c-plane sapphire substrate to suppress QCSE and extend the cut-oﬀ frequency from 214 MHz for conventional LEDs to 536 MHz at a current density of 2.5 kA/cm2, which is comparable to devices grown on semi-polar substrates.
Nanohole Array Structured GaN-based White LEDs with Improved Modulation Bandwidth Via Plasmon Resonance and Non-Radiative Energy Transfer

Rongqiao Wan,Guoqiang Li,Xiang Gao,Zhiqiang Liu,Junhui Li,Xiaoyan Yi,Nan Chi,Liancheng Wang

DOI: https://doi.org/10.1364/prj.421366

IF: 7.6

2021-01-01

Photonics Research

Abstract:Commercial white LEDs (WLEDs) are generally limited in modulation bandwidth due to a slow Stokes process, long lifetime of phosphors, and the quantum-confined Stark effect. Here we report what we believe is a novel plasmonic WLED by infiltrating a nanohole LED (H-LED) with quantum dots (QDs) and Ag nanoparticles (NPs) together (M-LED). This decreased distance between quantum wells and QDs would open an extra non-radiative energy transfer channel and thus enhance Stokes transfer efficiency. The presence of Ag NPs enhances the spontaneous emission rate significantly. Compared to an H-LED filled with QDs (QD-LED), the optimized M-LED demonstrates a maximum color rendering index of 91.2, a 43% increase in optical power at 60 mA, and a lowered correlated color temperature. Simultaneously, the M-LED exhibits a data rate of 2.21 Gb/s at low current density of 96 A / cm 2 (60 mA), which is 77% higher than that of a QD-LED. This is mainly due to the higher optical power and modulation bandwidth of the M-LED under the influence of plasmon, resulting in a higher data rate and higher signal-to-noise ratio under the forward error correction. We believe the approach reported in this work should contribute to a WLED light source with increased modulation bandwidth for a higher speed visible light communication application.
Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Zixian Wei,Lei Wang,Zhongxu Liu,Chao Zhang,Chien-Ju Chen,Meng-Chyi Wu,Yanfu Yang,Changyuan Yu,Lai Wang,H. Y. Fu

DOI: https://doi.org/10.1021/acsphotonics.2c00380

IF: 7

2022-01-01

ACS Photonics

Abstract:Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in highspeed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of microLED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-mu m diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on-off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZOOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 x 10(-3) and 1.88 x 10(-3) above the forward error correction (FEC) criterion of 3.8 x 10(-3), respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.
Large-signal Modulation Characteristics of a GaN-based Micro-Led for Gbps Visible-Light Communication

Pengfei Tian,Zhengyuan Wu,Xiaoyan Liu,Zhilai Fang,Shuailong Zhang,Xiaolin Zhou,Kefu Liu,Ming-Gang Liu,Shu-Jhih Chen,Chia-Yu Lee,Chunxiao Cong,Laigui Hu,Zhi-Jun Qiu,Lirong Zheng,Ran Liu

DOI: https://doi.org/10.7567/apex.11.044101

IF: 2.819

2018-01-01

Applied Physics Express

Abstract:The large-signal modulation characteristics of a GaN-based micro-LED have been studied for Gbps visible-light communication. With an increasing signal modulation depth the modulation bandwidth decreases, which matches up with the increase in the sum of the signal rise time and fall time. By simulating the band diagram and the carrier recombination rate of the micro-LED under large-signal modulation, carrier recombination and the carrier sweep-out effect are analyzed and found to be the dominant mechanisms behind the variation of modulation bandwidth. These results give further insight into improving the modulation bandwidth for high-speed visible-light communication. (C) 2018 The Japan Society of Applied Physics
High-output power GaN-LED based on surface plasmon enhancement

Jun Zhu,Bishi Ying,Liuli Qin

DOI: https://doi.org/10.1007/s12596-022-01046-0

IF: 2.1

2023-01-01

Journal of Optics

Abstract:In recent years, metallic nano-light-emitting diode (LED) arrays have gained wide attention as new-generation lighting materials. This study evaluates the optical properties of triangular array Ag nanodisc GaN-LED and analyses its effects on internal radiation and external light extraction of LED by changing the cycle and height of the Ag nanodisc. We use FDTD software for simulation. The results showed that the increase in the spontaneous emission rate depended on the localised surface plasmon (LSP) generated by the Ag nanodisc and the multiple quantum well layer, considering the coupling between the surface plasmon and the dipole enhanced the internal energy. Owing to the optimal structural parameters, the spontaneous emission rate was enhanced by 4.79 times, and the power integral of the internal radiation source increased from 0.037 to 0.177. Furthermore, the enhanced energy from coupling did not radiate outward and was limited to the surface of the Ag nanodisc. Additionally, a two-dimensional photonic crystal structure was embedded in the p-layer to transform the LSP into a radiation plasmon. When the transmittance was 0.32, the top surface power integral increased from 0.021 to 0.131, light output power increased by 5.47 times, and the factor of light extraction efficiency increased by 1.79 times. These results provide practical values that can be applied in optimising the design of high-performance GaN-based LED.
High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

S. Watson,J. McKendry,H. Chun,E. Gu,R. Ferreira,G. Faulkner,D. O’brien,S. Rajbhandari,I. White,A. Kelly,M. Dawson,E. Xie,R. Penty

DOI: https://doi.org/10.1109/LPT.2016.2581318

IF: 2.6

2016-10-01

IEEE Photonics Technology Letters

Abstract:Gallium-nitride (GaN)-based light-emitting diodes (LEDs) are highly efficient sources for general purpose illumination. Visible light communications (VLC) uses these sources to supplement existing wireless communications by offering a large, licence-free region of optical spectrum. Here, we report on progress in the development of micro-scale GaN LEDs (micro-LEDs), optimized for VLC. These blue-emitting micro-LEDs are shown to have very high electrical-to-optical modulation bandwidths, exceeding 800 MHz. The data transmission capabilities of the micro-LEDs are illustrated by demonstrations using ON-OFF-keying, pulse-amplitude modulation, and orthogonal frequency division multiplexing modulation schemes to transmit data over free space at the rates of 1.7, 3.4, and 5 Gb/s, respectively.

Physics,Engineering
Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

Jun Zhu,Haosu Zhang,Zhendong Zhu,Qunqing Li,Guofan Jin

DOI: https://doi.org/10.1016/j.optcom.2014.02.011

IF: 2.4

2014-01-01

Optics Communications

Abstract:This paper proposes a surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating. This structure contains a SiO2 film, a Ag film and a HfO2 film sequentially coated on the rectangularly-patterned p-GaN layer. The Ag film is used to enhance the internal quantum efficiency. The HfO2 cover-layer symmetrizes the distribution of refractive index besides the Ag film to improve the light extraction efficiency and surface-plasmon (SP) extraction efficiency. The inserted SiO2 layer is utilized to further improve the SP extraction efficiency. The properties of SP modes and Purcell effect in this structure are investigated. The photoluminescence experiments demonstrate that its peak intensity of top-emission is about 2.5 times greater than that from the reference structure covered by a single-layer Ag film on the rectangularly-patterned p-GaN layer.
GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Jinpeng Huang,Guobin Wang,Handan Xu,Feifan Xu,Ting Zhi,Wenjuan Chen,Yimeng Sang,Dongqi Zhang,Junchi Yu,Honghui He,Ke Xu,Pengfei Tian,Tao,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1109/ted.2024.3456770

IF: 3.1

2024-01-01

IEEE Transactions on Electron Devices

Abstract:Visible light communication (VLC) based on micro light-emitting diodes (micro-LEDs) offers energy-efficient methods for explosive data transmission. However, the severe quantum-confined stark effect (QCSE) and carrier localization make it challenging for micro-LEDs to achieve both high modulation bandwidth and high external quantum efficiency (EQE). Herein, GaN-based freestanding micro-LEDs with varying quantum barrier (QB) thicknesses were designed and fabricated. The thinner QBs effectively reduce the QCSE and improve carrier transport, resulting in high modulation bandwidth and less efficiency droop. Homoepitaxial growth of micro-LEDs gives birth to further improved modulation bandwidth and optical power due to lower defect density and improved thermal dispassion. The - 3 dB bandwidths of the 10 and 20 mu m-diameter freestanding micro-LEDs exceed 1.03 GHz and 823 MHz, respectively. A high optical power of 5.54 mW and a data rate of 4.08 Gb/s, while maintaining a relatively high EQE of 4.17%, were achieved on 20 mu m-diameter devices. The proposed methods systematically improve the modulation bandwidth and luminescence efficiency, demonstrating the significant potential for free-space VLC.
Study On The Influence Of Led Pn Junction Area On Modulation Bandwidth In Visible Light Communication

Zhou Zheng,Liu Li-Lin,Gang Wang

DOI: https://doi.org/10.1109/icept.2017.8046542

2017-01-01

Abstract:In recent years, many researchers take great interest on visible light communication (VLC), due to its rich spectrum resources, no electromagnetic interference, good confidentiality, etc. In the visible light communication system, the information is loaded into the LED, then the light is transmitted in the free space, and the detector receives the signal. As the result of the -3dB modulation bandwidth of power-type LED is only several MHz, which affects seriously the information capacity and transmission. Therefore, the enhancement of the modulation bandwidth of LED is major task for VLC. In this paper, based on our previous work, the LED chip with different PN junction area of 200 mu mx800 mu m, 300 mu mx900 mu m and 300 mu mx1200 mu m are designed and fabricated. By analyzing the photoelectric characteristics and modulation characteristics of the three groups of LED, the relationship between PN junction area and modulation bandwidth are showed. Then the influence factors and the enhancement method of modulation bandwidth of power-type LED are proposed.
Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Zhiqian Wu,Yanghua Lu,Wenli Xu,Yuejiao Zhang,Jianfeng Li,Shisheng Lin

DOI: https://doi.org/10.1016/j.nanoen.2016.10.028

IF: 17.6

2016-01-01

Nano Energy

Abstract:Putting a piece of graphene over p-GaN can form shallow P-N junction near the surface, which can act as light emitting diodes (LEDs) and promise many kinds of light manipulation methods. Herein, we introduce high performance surface plasmon enhanced graphene/p-GaN LEDs by inserting Ag nano-particles (Ag NPs) into the graphene/p-GaN interface. Bidirectional LEDs have been realized with a broad band emission from 550 nm to 650 nm at a forward bias of graphene side and a sharp emission of 400 nm at a reversed bias of graphene. The emission intensity of graphene/Ag NPs/p-GaN is largely enhanced in both forward and reverse bias situation when compared with the bare graphene/p-GaN heterostructure, which is attributed to the surface plasmon resonance of Ag NPs. These results indicate that graphene/Ag NPs/p-GaN heterojunction is a promising candidate for high brightness LEDs.
Si-substrate LEDs with Multiple Superlattice Interlayers for Beyond 24 Gbps Visible Light Communication

Fangchen Hu,Shouqing Chen,Guoqiang Li,Peng Zou,Junwen Zhang,Jian Hu,Jianli Zhang,Zhixue He,Shaohua Yu,Fengyi Jiang,Nan Chi

DOI: https://doi.org/10.1364/prj.424934

IF: 7.6

2021-01-01

Photonics Research

Abstract:High-speed visible light communication (VLC) using light-emitting diodes (LEDs) is a potential complementary technology for beyond-5G wireless communication networks. The speed of VLC systems significantly depends on the quality of LEDs, and thus various novel LEDs with enhanced VLC performance increasingly emerge. Among them, InGaN/GaN-based LEDs on a Si-substrate are a promising LED transmitter that has enabled VLC data rates beyond 10 Gbps. The optimization on the period number of superlattice interlayer (SL), which is a stress-relief epitaxial layer in a Si-substrate LED, has been demonstrated to be an effective method to improve Si-substrate LED’s luminescence properties. However, this method to improve LED’s VLC properties is barely investigated. Hence, we for the first time experimentally studied the impact of SL period number on VLC performance. Accordingly, we designed and fabricated an integrated 4 × 4 multichromatic Si-substrate wavelength-division-multiplexing LED array chip with optimal SL period number. This chip allows up to 24.25 Gbps/1.2 m VLC transmission using eight wavelengths, which is the highest VLC data rate for an InGaN/GaN LED-based VLC system to the best of our knowledge. Additionally, a record-breaking data rate of 2.02 Gbps over a 20-m VLC link is achieved using a blue Si-substrate LED with the optimal SL period number. These results validate the effectiveness of Si-substrate LEDs for both high-speed and long-distance VLC and pave the way for Si-substrate LED design specially for high-speed VLC applications.
Improvement in Modulation Bandwidth of Micro-LED Arrays Based on Low-Temperature-Interlayer Approach

Zhen Huang,Renchun Tao,Duo Li,Zhiwei Rao,Zexing Yuan,Ye Yuan,Qi Wang,Pengfei Tian,Bo Shen,Xinqiang Wang

DOI: https://doi.org/10.1109/LPT.2022.3181275

IF: 2.6

2022-01-01

IEEE Photonics Technology Letters

Abstract:To promote the modulation bandwidth of GaN-based blue micro-light emitting diodes (mu-LEDs) for visible light communication, the multiple quantum well active region has been improved via approaches based on low-temperature (LT) GaN insertion layer in barriers. mu-LED arrays with 10 x 10 pixels have been fabricated. The device using LT-GaN interlayer has an output power of 2.14 mW and a modulation bandwidth of 220 MHz, with an enhancement factor of 2.5 and 1.7, respectively, as compared with the device without LT-GaN interlayer. It is believed that these improvements are a result of the suppression of strain-related quantum-confined Stark effect and defects/dislocations by LT-GaN interlayer based optimization. The LT-GaN interlayer not only facilitates a tensile strain in barriers, making it more lattice-compatible with InGaN well to reduce the strain there, but also has an effect on blocking the propagation of threading dislocation into upper layers. Our work provides an effective approach to enhance the modulation bandwidth of III-nitride mu-LEDs using IT interlayer.
High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Fangchen Hu,Shouqing Chen,Yuyi Zhang,Guoqiang Li,Peng Zou,Junwen Zhang,Chao Shen,Xiaolei Zhang,Jian Hu,Jianli Zhang,Zhixue He,Shaohua Yu,Fengyi Jiang,Nan Chi

DOI: https://doi.org/10.1186/s43074-021-00039-9

IF: 16.5

2021-08-09

PhotoniX

Abstract:Abstract High-speed visible light communication (VLC), as a cutting-edge supplementary solution in 6G to traditional radio-frequency communication, is expected to address the tension between continuously increased demand of capacity and currently limited supply of radio-frequency spectrum resource. The main driver behind the high-speed VLC is the presence of light emitting diode (LED) which not only offers energy-efficient lighting, but also provides a cost-efficient alternative to the VLC transmitter with superior modulation potential. Particularly, the InGaN/GaN LED grown on Si substrate is a promising VLC transmitter to simultaneously realize effective communication and illumination by virtue of beyond 10-Gbps communication capacity and Watt-level output optical power. In previous parameter optimization of Si-substrate LED, the superlattice interlayer (SL), especially its period number, is reported to be the key factor to improve the lighting performance by enhancing the wall-plug efficiency, but few efforts were made to investigate the influence of SLs on VLC performance. Therefore, to optimize the VLC performance of Si-substrate LEDs, we for the first time investigated the impact of the SL period number on VLC system through experiments and theoretical derivation. The results show that more SL period number is related to higher signal-to-noise ratio (SNR) via improving the wall-plug efficiency. In addition, by using Levin-Campello bit and power loading technology, we achieved a record-breaking data rate of 3.37 Gbps over 1.2-m free-space VLC link under given optimal SL period number, which, to the best of our knowledge, is the highest data rate for a Si-substrate LED-based VLC system.

optics
Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

Z. W. Zheng,H. Yu,B. C. Ren,L. M. Zhou,H. Y. Fu,X. Cheng,L. Y. Ying,H. Long,B. P. Zhang

DOI: https://doi.org/10.1149/2.0301709jss

IF: 2.2

2017-01-01

ECS Journal of Solid State Science and Technology

Abstract:We report the modulation characteristics of individually addressable pixels in hybrid 4 x 3 gallium-nitride (GaN)-based light-emitting-diode (LED) arrays, where the pixels in each array range from 30 mu m to 300 mu m in diameter and have peak emission wavelength at similar to 448 nm. The influence of device active area on modulation performances was investigated. Due to the capability to be easily driven at higher current density, the smaller area micro-LED pixels exhibit higher modulation bandwidths than the larger area pixels. The highest -3 dB modulation bandwidth of 161 MHz at the bias current of 100 mA was achieved in the micro-LED with a diameter of 30 mu m. By comparison of results of different diameters, it was found that the carrier density, rather than the diameter itself, is a key factor in determining the modulation bandwidth. Such micro-LEDs show high potential for free-space high-speed visible light communication applications. (c) 2017 The Electrochemical Society. All rights reserved.
High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

Feifan Xu,Pengjiang Qiu,Tao Tao,Pengfei Tian,Xiaoyan Liu,Ting Zhi,Zili Xie,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1109/jphot.2023.3235108

IF: 2.4

2023-02-03

IEEE Photonics Journal

Abstract:Micro-light-emitting diodes (micro-LEDs) with high modulation rates and low power consumption could attract growing attention as visible light communication (VLC) technology advances. The designed and fabricated semi-polar micro-LEDs have achieved high bandwidth at low current injection due to the reduced quantum-confined Stark effect (QCSE), which was significantly greater than that of typical c-plane at the same current injection. Semi-polar green micro-LEDs got a −3 dB bandwidth that surpasses 500 MHz and 1 GHz at low current densities of 43.8 A/cm 2 and 120.6 A/cm 2 , while blue micro-LEDs exceed 500 MHz at low current densities of 76.6 A/cm 2 , respectively. Additionally, the free space VLC system has shown semi-polar blue and green micro-LED transmission data rates of 3.495 Gbps (433 A/cm 2 ) and 3.483 Gbps (402 A/cm 2 ) respectively. Semi-polar micro-LEDs, which can achieve low power consumption and high bandwidth, are anticipated to play a significant role in the development of energy-efficient VLC in the future.

engineering, electrical & electronic,optics,physics, applied
GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Shihao Liang,Guobin Wang,Tao,Feifan Xu,Kai Chen,Ting Zhi,Zhifang Zhu,Wenjuan Chen,Yong Li,Ke Xu,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1109/jphot.2023.3278671

IF: 2.4

2023-01-01

IEEE Photonics Journal

Abstract:GaN-based micro light-emitting diode (LED) has gradually become one of the promising light sources for visible light communication (VLC), of which high modulation bandwidth has been demonstrated. In order to acquire high speed and high brightness for VLC application, the modulation bandwidth and optical performance of micro-LEDs were investigated in series and parallel in this work. The electrical characteristics, optical characteristics and communication characteristics of single-pixel, 2-pixel, 4-pixel series and parallel green micro-LEDs with different pixel sizes were systematically tested. High modulation bandwidth as much as 1.4 GHz was acquired by using 10 μm micro-LEDs with 4-pixel in parallel. It is found that parallel micro-LED array can achieve higher modulation bandwidth, higher brightness and higher stability as well, which can be used as the preferred mode for the development of micro-LED based VLC.
1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

Lei Wang,Zixian Wei,Chien-Ju Chen,Lai Wang,H. Y. Fu,Li Zhang,Kai-Chia Chen,Meng-Chyi Wu,Yuhan Dong,Zhibiao Hao,Yi Luo

DOI: https://doi.org/10.1364/prj.411863

IF: 7.6

2021-01-01

Photonics Research

Abstract:The data rate of a visible light communication (VLC) system is basically determined by the electrical-to-optical (E-O) bandwidth of its light-emitting diode (LED) source. In order to break through the intrinsic limitation of the carrier recombination rate on E-O bandwidth in conventional c-plane LEDs based on InGaN quantum wells, a blue micro-LED with an active region of nano-structured InGaN wetting layer is designed, fabricated, and packaged to realize a high-speed VLC system. The E-O bandwidth of the micro-LED can reach up to 1.3 GHz. Based on this high-speed micro-LED, we demonstrated a data rate of 2 Gbps with a bit error rate (BER) of 1.2×10-3 with simple on-off keying signal for a 3-m real-time VLC. In addition, a 4-Gbps VLC system using quadrature phase shift keying-orthogonal frequency-division multiplexing with a BER of 3.2×10-3 is also achieved for the same scenario. Among all the point-to-point VLC systems based on a single-pixel LED, this work has the highest distance-bandwidth product of 3 GHz·m and the highest distance-rate product of 12 Gbps·m.
C-plane Blue Micro-LED with 1.53 GHz Bandwidth for High-speed Visible Light Communication

Feifan Xu,Zuxin Jin,Tao Tao,Pengfei Tian,Guobin Wang,Xiaoyan Liu,Ting Zhi,Qi-ang Yan,Danfeng Pan,Zili Xie,Ke Xu,Bin Liu,Rong Zhang

DOI: https://doi.org/10.1109/led.2022.3168314

IF: 4.8157

2022-01-01

IEEE Electron Device Letters

Abstract:A high-speed c-plane InGaN/GaN blue micro-scale light-emitting diodes (Micro-LEDs) with a pixel diameter of $60~mu ext{m}$ , and a high −3 dB modulation bandwidth of 1.53 GHz at the current density of 5996 A/cm2 were demonstrated. The ultra-thin quantum well (QW) structure with InGaN layer of 1 nm was designed, and optimized variable temperature growth processes were adopted to increase In incorporation and localization effect in the quantum wells, which greatly reduce the polarization field and increase the overlap of electron-hole wave functions. The differential carrier lifetime was effectively shortened, increasing the modulation bandwidth of the Micro-LED. And a data rate of 5.27 Gbps with a bit error rate (BER) of $3.1 imes 10^{-{3}}$ was demonstrated with orthogonal frequency-division multiplexing (OFDM) signal for a 1 m free space real-time visible light communication (VLC) based on such high-speed micro-LED. Promising results in this work may support a great development of high-speed VLC applications.

engineering, electrical & electronic

Enhancement Of The Modulation Bandwidth For Surface Plasmon Coupled Leds For Visible Light Communication

Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Nanohole Array Structured GaN-based White LEDs with Improved Modulation Bandwidth Via Plasmon Resonance and Non-Radiative Energy Transfer

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Large-signal Modulation Characteristics of a GaN-based Micro-Led for Gbps Visible-Light Communication

High-output power GaN-LED based on surface plasmon enhancement

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Study On The Influence Of Led Pn Junction Area On Modulation Bandwidth In Visible Light Communication

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Si-substrate LEDs with Multiple Superlattice Interlayers for Beyond 24 Gbps Visible Light Communication

Improvement in Modulation Bandwidth of Micro-LED Arrays Based on Low-Temperature-Interlayer Approach

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Modulation Characteristics of GaN-Based Light-Emitting-Diodes for Visible Light Communication

High Bandwidth Semi-Polar InGaN/GaN Micro-LEDs With Low Current Injection for Visible Light Communication

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

C-plane Blue Micro-LED with 1.53 GHz Bandwidth for High-speed Visible Light Communication