Bi3+-doped CH3NH3PbI3: Red-shifting Absorption Edge and Longer Charge Carrier Lifetime

Ruiqi Wang,Xian Zhang,Jianqiao He,Cheng Ma,Li Xu,Peng Sheng,Fuqiang Huang
DOI: https://doi.org/10.1016/j.jallcom.2016.11.125
IF: 6.2
2017-01-01
Journal of Alloys and Compounds
Abstract:Ion doping is an effective approach to improve the properties of hybrid perovskite CH3NH3PbI3, such as chemical stability and solar absorption. Here Bi3+-doped CH3NH3PbI3 was synthesized via cooling crystallization process in aqueous solution. Along with the Bi3+-doping, the bandgap of CH3NH3PbI3 could be significantly narrowed, by the maximum value of 140 meV at the optimal doping level of 1.6 M %. Transient photovoltage measurement (TPV) revealed the Bi3+-doped CH3NH3PbI3 could achieve a charge carrier lifetime of 280 ms, which was almost twice longer than that of pristine CH3NH3PbI3 (157 ms). The prolonged carrier lifetime of Bi3+-doped CH3NH3PbI3 was supposed to be attributed to its lower packing factor (PF), which was caused by the CH3NH3+ vacancy (VMA) after doping This work provides a new approach to tune the band gap and charge carrier lifetime of the hybrid perovskite CH3NH3PbI3, which should be promising to further improve the performance of perovskite-based photovoltaic devices. (C) 2016 Elsevier B.V. All rights reserved.
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