The influence of Ti content in AgCuTi filler on its wetting and spreading mechanism on silicon nitride ceramics: An experiment and first-principles calculation study
Haifeng Xu,Jie Wang,Fengsong Fan,Zepeng Zhang,Deyin Zhang,Haoyang Wu,Zhirui Zhang,Aimin Chu,Baorui Jia,Enxiang Pu,Xuanhui Qu,Mingli Qin
DOI: https://doi.org/10.1016/j.mtcomm.2024.110833
IF: 3.8
2024-11-01
Materials Today Communications
Abstract:As a promising high-thermal-conductivity ceramic, the direct bonding of silicon nitride (Si 3 N 4 ) with metals remains challenging, because of their complex interfacial reaction and wetting mechanism between the metal fill liquid and ceramic. Here, we investigated the wetting mechanism and spreading behavior of AgCuTi filler on Si 3 N 4 ceramics by combining wetting experiments and first-principles calculations. The experiments indicated that as the Ti content in AgCuTi filler increased, the reaction layer at the interface changed from a discontinuous state to a continuous state, resulting in good wetting and spreading performance of liquid. In particular, the interface structure analysis shows that the main reaction product is Ti 5 Si 3 , and with further increasing the Ti content, the AgCuTi liquid can further spread on the interfacial product Ti 5 Si 3 , achieving a minimum wetting angle of 5.5°. The bonding behavior at the pre-reaction AgCuTi(111)/Si 3 N 4 (001) and post-reaction AgCuTi(111)/Ti 5 Si 3 (001) interfaces were analyzed by calculating the density of states, charge density, and differential charge density. The results show that the reaction enhances the bonding at the interface. The bonding behavior with different Ti contents was investigated. The AgCu-4.5 wt%Ti (111)/Ti 5 Si 3 (001) wetting interface has a larger W a and a smaller interface difference ∆δr , with values of 5.08 J/m 2 and 0.07 J/m 2 , respectively, better than that at AgCuTi1(111)/Ti 5 Si 3 (001) and AgCuTi (111)/Ti 5 Si 3 (001) interfaces.
materials science, multidisciplinary