Abstract:Abstract Batch production of single-crystal two-dimensional (2D) transition metal dichalcogenides is one prerequisite for the fabrication of next-generation integrated circuits (IC). Contemporary strategies for the wafer-scale high-quality crystallinity of 2D materials center on merging the unidirectionally aligned different size domains. However, the imperfectly merged area with translational lattice brings about high defect density and low device uniformity, which restricts the application of 2D materials. Here, we take the lead in establishing the 2D Czochralski method that can rapidly grow wafer-scale, single-crystal MoS2 with no grain boundaries. The method relies on a liquid-liquid interface spreading mechanism, which eventually realizes the Czochralski method in 2D materials growth. Specifically, a 2D intermediate liquid (Na2Mo2O7) film is formed through a eutectic reaction on an atomically smooth surface before sulfurization, leading to an ultralow nucleation density, an ultrafast crystallization rate (75 μm s-1), and thus producing large single-crystal MoS2 with the record domain size larger than 1.5 cm. Meanwhile, the 2D Czochralski method produces an ultra-clean, fast, and high-quality transfer process facilitated by the significantly reduced adhesion between the MoS2 crystal and the atomically smooth substrate. The obtained MoS2 large single-crystal shows superb uniformity and high quality with an ultralow defect density of 2.9×1012 cm-2, a high mobility of 105.4 cm2 V-1 s-1, and a saturation current of 443.8 μA μm-1 in the short-channel devices. A statistical analysis of 192 field-effect transistors within a centimeter-scale domain showed a 96.4% device yield and a 15.9% variation in mobility with a minimal variation of 15.9%, positioning itself as an advanced standard monolayer MoS2 device. This 2D Czochralski method provides fruitful implications for fabricating high-quality and scalable 2D semiconductor materials and devices.

Controllable Synthesis of 2D and 1D MoS2 Nanostructures on Au Surface

Deriving MoS2 Nanoribbons from Their Flakes by Chemical Vapor Deposition.

Edge Reconstruction-Dependent Growth Kinetics of MoS2

In-situ Fabrication of Mo 6 S 6 -Nanowire-terminated Edges in Monolayer Molybdenum Disulfide

Direct Chemical Vapor Deposition Growth and Band-Gap Characterization of MoS2/h-BN van der Waals Heterostructures on Au Foils

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Two‐Dimensional Layered Heterostructures Synthesized from Core–Shell Nanowires

Space-confined CVD growth of 2D-MoS<sub>2</sub> crystals with tunable dimensionality <i>via</i> adjusting growth conditions

Epitaxial Growth of Centimeter-Scale Single-Crystal MoS2 Monolayer on Au(111)

Controlled Growth of MoS2 Via Surface-Energy Alterations.

MoS2 Surface Structure Tailoring Via Carbonaceous Promoter.

Monolayer MoS2 Growth on Au Foils and On‐Site Domain Boundary Imaging

Vapour–liquid–solid growth of monolayer MoS 2 nanoribbons

A Controllable Synthesis of Uniform MoS2 Monolayers on Annealed Molybdenum Foils

Oscillating edge states in one-dimensional MoS 2 nanowires

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Scalable and controllable synthesis of 2D high-proportion 1T-phase MoS2

Towards Well-Defined MoS2 Nanoribbons on a Large Scale.

Two-dimensional Czochralski growth of single-crystal MoS2

Edge Epitaxy of Two-Dimensional MoSe2 and MoS2 Nanosheets on One-Dimensional Nanowires

Atomically Flat Zigzag Edges in Monolayer MoS2 by Thermal Annealing.