Abstract:The existence of conventional magnetic ions may not be necessary for the magnetism of 2D transition metal dichalcogenides (TMDs), but the local magnetic moment can effectively regulate the magnetism. Recent enhancement approaches for introduction of magnetism into 2D TMDs mainly use element doping, vacancy defects, heterostructures, phase modulation, adsorption, and also electron irradiation induction, O plasma treatment, etc. Two‐dimensional transition metal dichalcogenides (2D TMDs) present promising applications in various fields such as electronics, optoelectronics, memory devices, batteries, superconductors, and hydrogen evolution reactions due to their regulable energy band structures and unique properties. For emerging spintronics applications, materials with excellent room‐temperature ferromagnetism are required. Although most transition metal compounds do not possess room‐temperature ferromagnetism on their own, they are widely modified by researchers using the emerging strategies to engineer or modulate their intrinsic properties. This paper reviews recent enhancement approaches to induce magnetism in 2D TMDs, mainly using doping, vacancy defects, composite of heterostructures, phase modulation, and adsorption, and also by electron irradiation induction, O plasma treatment, etc. On this basis, the produced effects of these methods for the introduction of magnetism into 2D TMDs are compressively summarized and constructively discussed. For perspective, research on magnetic doping techniques for 2D TMDs materials should be directed toward more reliable and efficient directions, such as exploring advanced design strategies to combine dilute magnetic semiconductors, antiferromagnetic semiconductors, and superconductors to develop new types of heterojunctions; and advancing experimentation strategies to fabricate the designed materials and enable their functionalities with simultaneously pursuing the upscalable growth methods for high‐quality monolayers to multilayers.

Robust Ferromagnetism in Mn-Doped Mos2 Nanostructures

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Intrinsic Ferromagnetism in Mn-Substituted Mos2 Nanosheets Achieved by Supercritical Hydrothermal Reaction

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

Structural Stability and Magnetic-Exchange Coupling in Mn-doped Monolayer/bilayer MoS2

Robust Half-Metallic Magnetism in Two-Dimensional Fe/MoS2

Title: XAFS study on the ferromagnetism in Mn-doped MoS2 nanosheets

Effect of Ho Dopant on the Ferromagnetic Characteristics of MoS2 Nanocrystals

Controlling Magnetism Of Mos2 Sheets By Embedding Transition-Metal Atoms And Applying Strain

Ferromagnetism in Transitional Metal-Doped MoS2 Monolayer.

Extended 1D Defect Induced Magnetism in 2D MoS2 Crystal.

Room-Temperature Ferromagnetism in Layered Mn-Substituted MoS<sub>2</sub>

A first-principles study of a real energetically stable MoN2 nanosheet and its tunable electronic structure

Bilayer hexagonal structure MnN2 nanosheet with room-temperature ferromagnetic half-metal behavior and tunable electronic structure

High Temperature Ferromagnetism in Cu-Doped Mos2 Nanosheets

Ultrahigh-temperature Ferromagnetism MoS2 Moire Superlattice/graphene Hybrid Heterostructures

Emerging Enhancement and Regulation Strategies for Ferromagnetic 2D Transition Metal Dichalcogenides

Reversible Tuning of the Ferromagnetic Behavior in Mn-Doped MoS2 Nanosheets Via Interface Charge Transfer.

Synergetic Effect of Substitutional Dopants and Sulfur Vacancy in Modulating the Ferromagnetism of MoS 2 Nanosheets.

Adjustable Ferromagnetic Behavior in Iron-Doped Two-Dimensional MoS2 Multilayer Nanosheets

Robust room-temperature ferromagnetism induced by defect engineering in monolayer MoS2