Enhanced Ideal Strength of Thermoelectric Half-Heusler TiNiSn by Sub-Structure Engineering

Guodong Li,Qi An,Umut Aydemir,William A. Goddard,Max Wood,Pengcheng Zhai,Qingjie Zhang,G. Jeffrey Snyder

DOI: https://doi.org/10.1039/c6ta04123j

IF: 11.9

2016-01-01

Journal of Materials Chemistry A

Abstract:In realistic applications, high strength, high toughness TiNiSn based TE devices are required.

What problem does this paper attempt to address?

Enhanced thermoelectric performance in TiNiSn-based half-Heuslers

R. A. Downie,D. A. MacLaren,R. I. Smith,J. W. G. Bos

DOI: https://doi.org/10.1039/c2cc37121a

2013-01-03

Abstract:Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler structure.

Materials Science
Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

L. L. Wang,L. Miao,Z. Y. Wang,W. Wei,R. Xiong,H. J. Liu,J. Shi,X. F. Tang

DOI: https://doi.org/10.1063/1.3056384

IF: 2.877

2009-01-01

Journal of Applied Physics

Abstract:The electronic structures of half-Heusler compounds TiNiSn and TiCoSb are investigated by using the full-potential linearized augmented plane-wave method. When the spin-orbital coupling is included in the calculations, there is only a slight change in the energy band structures. The transport coefficients (Seebeck coefficient, electrical conductivity, and power factor) are then calculated within the Boltzmann theory, and further evaluated as a function of chemical potential assuming a rigid band picture. Our calculations offer a valuable insight on how to improve the thermoelectric performance of these two compounds. (C) 2009 American Institute of Physics.
Fabrication and Thermoelectric Properties of Fine-Grained TiNiSn Compounds

Minmin Zou,Jing-Feng Li,Bing Du,Dawei Liu,Takuji Kita

DOI: https://doi.org/10.1016/j.jssc.2009.09.003

IF: 3.3

2009-01-01

Journal of Solid State Chemistry

Abstract:Nearly single-phased TiNiSn half-Heusler compound thermoelectric materials were synthesized by combining mechanical alloying (MA) and spark plasma sintering (SPS) in order to reduce its thermal conductivity by refining the grain sizes. Although TiNiSn compound powders were not synthesized directly via MA, dense bulk samples of TiNiSn compound were obtained by the subsequent SPS treatment. It was found that an excessive Ti addition relative to the TiNiSn stoichiometry is effective in increasing the phase purity of TiNiSn half-Heusler phase in the bulk samples, by compensating for the Ti loss caused by the oxidation of Ti powders and MA processing. The maximum power factor value obtained in the Ti-compensated sample is 1720μWm−1K−2 at 685K. A relatively high ZT value of 0.32 is achieved at 785K for the present undoped TiNiSn compound polycrystals.
Significant enhancement in thermoelectric properties of half-Heusler compound TiNiSn by grain boundary engineering

Xiaoling Zhang,Shuang Li,Bo Zou,Pengfei Xu,Yilin Song,Biao Xu,Yifeng Wang,Guodong Tang,Sen Yang

DOI: https://doi.org/10.1016/j.jallcom.2022.163686

IF: 6.2

2022-04-01

Journal of Alloys and Compounds

Abstract:Half-Heusler compounds MNiSn (M = Ti, Zr, Hf) have attracted increasing attentions in the field of thermoelectrics, since their constituent elements are non-toxic and abundant. Meanwhile, it possesses good thermal stability as well as high mechanical strength. Herein, a substantial enhancement to the thermoelectric performance of intrinsic TiNiSn is achieved by passing the pulverized powders through the sieve prior to sintering. The Seebeck coefficient has increased sharply owing to the energy filtering effect, which is induced by the reduction in the average grain sizes, combined with a slightly decreased electrical conductivity, leading to a significant improvement in power factor. Moreover, the lattice thermal conductivity can be further reduced via the enhancement of the grain boundary scattering. Consequently, a maximum figure-of-merit (zT) value of 0.84 at 820 K is achieved for un-doped TiNiSn. This work indicates that the grain boundary engineering may serve as an effective method for improving the thermoelectric performance of other half-Heusler compounds.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Enhancing Thermoelectric Performance of Tinisn Half-Heusler Compounds Via Modulation Doping

Tanya Berry,Chenguang Fu,Gudrun Auffermann,Gerhard H. Fecher,Walter Schnelle,Federico Serrano-Sanchez,Yuan Yue,Hong Liang,Claudia Felser

DOI: https://doi.org/10.1021/acs.chemmater.7b02685

IF: 10.508

2017-01-01

Chemistry of Materials

Abstract:MNiSn (M = Ti, Zr, and Hf) half-Heusler (HH) compounds are widely studied n-type thermoelectric (TE) materials for power generation. Most studies focus on Zr- and Hf-based compounds due to their high thermoelectric performance. However, these kinds of compositions are not cost-effective. Herein, the least expensive alloy in this half-Heusler family-TiNiSn-is investigated. Modulation doping of half-metallic MnNiSb in the TiNiSn system is realized by using spark plasma sintering. It is found that MnNiSb dissolves into the TiNiSn matrix and forms a heavily doped Ti1-xMnxNiSn1-xSbx phase, which leads to largely enhanced carrier concentration and also slight increase of carrier mobility. As a result, the electrical conductivity and power factor of the modulation doped compounds are greatly improved. A maximum power factor of 45 X 10(-4) W K-2 m(-1) is obtained at 750 K for the modulation doping system (TiNiSn)(1-x) + (MnNiSb)(x) with x = 0.05, which is one of the highest reported values in literature for TiNiSn systems. Furthermore, the lattice thermal conductivity is also suppressed due to the enhanced phonon scattering. Beneficial from the improved power factor and suppressed lattice thermal conductivity, a peak zT of 0.63 is obtained at 823 K for x = 0.05, which is an similar to 70% increase compared to the peak zT of TiNiSn. These results highlight the potential application of inexpensive TiNiSn-based TE materials and the effectiveness of modulation doping in enhancing the TE performance of HH compounds.
Enhancing the Thermoelectric Performance of Self-Defect TiNiSn: A First-Principles Calculation

Meena Rittiruam,Anucha Yangthaisong,Tosawat Seetawan

DOI: https://doi.org/10.1007/s11664-018-6686-7

IF: 2.1

2018-09-24

Journal of Electronic Materials

Abstract:Carrier concentration is an important parameter for improving the thermoelectric (TE) properties of half-Heusler alloys, which can be achieved by defect engineering. In the present work, we studied the electronic structure and TE properties of TiNiSn with self-defects by using first-principles calculation. The self-defects include vacancies, substitutions, and interstitials, and all these systems were studied on the basis of defect formation energy. The stability of defect configurations showed that the Ni-vacancy (Ni-vac), Ti substitution at a Ni site (TiNi), Sn substitution at Ti and Ni sites (SnTi, SnNi), Ti-interstitial (Ti-int), and Ni-interstitial (Ni-int) are the most favorable defects. The self-defects were found to create an electron pocket in the density of states at the Fermi energy (DOS(EF)), except for the Ni-vac. Further, the electron concentration and specific heat were significantly increased by the self-defects. Ni-vac, TiNi, and SnNi showed a large power factor in comparison to pristine TiNiSn due to the high electrical conductivity. Ni-vac and SnNi showed a high TE performance in the intermediate and high temperature range, which would make them excellent TE candidates for a variety of applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, applied
Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Guodong Li,Sergey I. Morozov,Qingjie Zhang,Qi An,Pengcheng Zhai,G. Jeffrey Snyder

DOI: https://doi.org/10.1103/physrevlett.119.215503

IF: 8.6

2017-01-01

Physical Review Letters

Abstract:The conversion efficiency (zT) of thermoelectric (TE) materials has been enhanced over the last two decades, but their engineering applications are hindered by the poor mechanical properties, especially the low strength at working conditions. Here we used density functional theory (DFT) to show a strength enhancement in the TE semiconductor InSb arising from the twin boundaries (TBs). This strengthening effect leads to an 11% enhancement of the ideal shear strength in flawless crystalline InSb where this theoretical strength is considered as an upper bound on the attainable strength for a realistic material. DFT calculations reveal that the directional covalent bond rearrangements at the TB accommodating the structural mismatch lead to the anisotropic resistance against the deformation combined with the enhanced TB rigidity. This produces a strong stress response in the nanotwinned InSb. This work provides a fundamental insight for understanding the deformation mechanism of nanotwinned TE semiconductors, which is beneficial for developing reliable TE devices.
Improving the Thermoelectric Properties of Half-Heusler TiNiSn Through Inclusion of a Second Full-Heusler Phase: Microwave Preparation and Spark Plasma Sintering of TiNi1+xSn

Christina S. Birkel,Jason E. Douglas,Bethany R. Lettiere,Gareth Seward,Nisha Verma,Yichi Zhang,Tresa M. Pollock,Ram Seshadri,Galen D. Stucky

DOI: https://doi.org/10.1039/c3cp50918d

2013-01-01

Abstract:Half-Heusler thermoelectrics offer the possibility to choose from a variety of non-toxic and earth-abundant elements. TiNiSn is of particular interest and - with its relatively high electrical conductivity and Seebeck coefficient - allows for optimization of its thermoelectric figure of merit, reaching values of up to 1 in heavily-doped and/or phase-segregated systems. In this contribution, we used an energy- and time-efficient process involving solid-state preparation in a commercial microwave oven and a fast consolidation technique, Spark Plasma Sintering, to prepare a series of Ni-rich TiNi1+xSn with small deviations from the half-Heusler composition. Spark Plasma Sintering plays an important role in the process by being a part of the synthesis of the material rather than solely a densification technique. Synchrotron powder X-ray diffraction and microprobe data confirm the presence of a secondary TiNi2Sn full-Heusler phase within the half-Heusler matrix. We observe a clear correlation between the amount of full-Heusler phase and the lattice thermal conductivity of the samples, resulting in decreasing total thermal conductivity with increasing TiNi2Sn fraction. This trend shows that phonons are scattered effectively as a result of the microstructure of the materials with full-Heusler inclusions in the size range of microns to tens of microns. The best performing samples with around 5% of TiNi2Sn phase exhibit maximum figures of merit of almost 0.6 between 750 K and 800 K which is an increase of ca. 35% compared to the zT of the parent compound TiNiSn.
Improved Thermoelectric Properties of TiNiSn Through Enhancing Strain Field Fluctuation

Enkhtaivan Lkhagvasuren,Chenguang Fu,Gerhard H. Fecher,Gudrun Auffermann,Guido Kreiner,Walter Schnelle,Claudia Felser

DOI: https://doi.org/10.1088/1361-6463/aa85bb

2017-01-01

Abstract:MNiSn (M = Hf, Zr, Ti) -based half Heusler compounds have attracted extensive attention as promising materials in thermoelectric power generation. In this work, the thermoelectric properties of the cheapest composition TiNiSn from this system are investigated. Isoelectronic substitutions of Si and Ge on Sn site are employed to reduce the lattice thermal conductivity. It is found that Si substitution leads to simultaneously enhanced mass and strain field fluctuations in TiNiSn, while the strain field fluctuation dominates the decrease of thermal conductivity in Ge substituted TiNiSn. A maximum ZT of 0.48 at 740 K is obtained in TiNiSn0.975Ge0.025, which is a 23% increase compared to TiNiSn. This result highlights the role of strain field fluctuation in suppressing lattice thermal conductivity and improving the thermoelectric performance of half-Heusler compounds.
Computational Search for Better Thermoelectric Performance in Nickel-Based Half-Heusler Compounds

Xiaorui Chen,Xin Zhang,Jianzhi Gao,Qing Li,Zhibin Shao,Haiping Lin,Minghu Pan

DOI: https://doi.org/10.1021/acsomega.1c02172

IF: 4.1

2021-07-12

ACS Omega

Abstract:Half-Heusler alloys have recently received extensive attention because of their promising thermoelectric (TE) properties and great potential for applications requiring efficient thermoelectricity. Although the conversion efficiency of these materials can be greatly improved by doping, it is still far away from the real-life applications. Therefore, search for better parent TE compounds is deemed urgent. Using a high-throughput search method based on first-principles calculations in newly proposed 378 half-Heusler alloys, we identify nine nickel-based half-Heusler semiconductors as candidates and systematically study their mechanical, electronic, and transport properties. Their mechanical and dynamical stabilities are verified based on the calculated elastic constants and phonon spectra. The electronic structure calculations indicate the existence of direct energy gaps in the NiVZ (Z = Al, Ga, and In) and indirect energy gaps in the NiTiZ (Z = Si, Ge, and Sn) and NiScZ (Z = P, As, and Sb) compounds. Among them, NiVAl, NiVGa, and NiVIn exhibit a sharp slope of density of states near the Fermi level, which is predicted to be essential for a high TE performance. Further investigation on carrier concentration and temperature dependence of TE properties shows the high power factors of NiVAl, NiVGa, and NiVIn, which are responsible for their high figure of merit values. The highest maximum power factor of 5.152 mW m-1 K-2 and figure of merit of 0.309 are predicted for pristine half-Heusler NiVIn, which are larger than the values of some known pristine and doped half-Heusler TE materials. Our work opens up new avenues for rationally searching better TE materials among half-Heusler alloys for applications in fields requiring efficient thermoelectricity.
Engineering the Thermoelectric Transport in Half‐Heusler Materials through a Bottom‐Up Nanostructure Synthesis

Huaizhou Zhao,Binglei Cao,Shanming Li,Ning Liu,Jiawen Shen,Shan Li,Jikang Jian,Lin Gu,Yanzhong Pei,Gerald Jeffrey Snyder,Zhifeng Ren,Xiaolong Chen

DOI: https://doi.org/10.1002/aenm.201700446

IF: 27.8

2017-05-16

Advanced Energy Materials

Abstract:Half‐Heusler (HH) alloys are among the best promising thermoelectric (TE) materials applicable for the middle‐to‐high temperature power generation. Despite of the large thermoelectric power factor and decent figure‐of‐merit ZT (≈1), their broad applications and enhancement on TE performance are limited by the high intrinsic lattice thermal conductivity (κ L ) due to insufficiencies of phonon scattering mechanisms, and the fewer powerful strategies associated with the microstructural engineering for HH materials. This study reports a bottom‐up nanostructure synthesis approach for these HH materials based on the displacement reaction between metal chlorides/bromides and magnesium (or lithium), followed by vacuum‐assisted spark plasma sintering process. The samples are featured with dense dislocation arrays at the grain boundaries, leading to a minimum κ L of ≈1 W m −1 K −1 at 900 K and one of the highest ZT (≈1) and predicted η (≈11%) for n‐type Hf 0.25 Zr 0.75 NiSn 0.97 Sb 0.03 . Further manipulation on the dislocation defects at the grain boundaries of p‐type Nb 0.8 Ti 0.2 FeSb leads to enhanced maximum power factor of 47 × 10 −4 W m −1 K −2 and the predicted η of ≈7.5%. Moreover, vanadium substitution in FeNb 0.56 V 0.24 Ti 0.2 Sb significantly promotes the η to ≈11%. This strategy can be extended to a broad range of advanced alloys and compounds for improved properties.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure

T. Berry,S. Ouardi,G. H. Fecher,B. Balke,G. Kreiner,G. Auffermann,W. Schnelle,C. Felser

DOI: https://doi.org/10.1039/C6CP06859F

2016-10-09

Abstract:The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system. The Ti1-xMnxNiSn1-xSbx alloys were prepared by arc-melting and were annealed at temperatures obtained from differential thermal analysis and differential scanning calorimetry results. The phases were characterized using powder X-ray diffraction patterns, energy dispersive X-ray spectroscopy, and differential scanning calorimetry. After annealing the majority phase was TiNiSn with some Ni rich sites and the minority phases was majorly Ti6Sn5, Sn, and MnSn2. Ni rich sites were caused by Frenkel defects, this led to a metal-like behavior of the semiconducting specimens at low temperature. For x up to 0.05 the samples showed an activated conduction, whereas for x>0.05 they showed metallic character. The figure of merit for x=0.05 was increased by 61% (ZT=0.45) in comparison to the pure TiNiSn.

Disordered Systems and Neural Networks,Materials Science
Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys

Nagendra S Chauhan,Sivaiah Bathula,Bhasker Gahtori,Subhendra D Mahanti,Amrita Bhattacharya,Avinash Vishwakarma,Ruchi Bhardwaj,Vidya Nand Singh,Ajay Dhar

DOI: https://doi.org/10.1021/acsami.9b12599

2019-12-26

Abstract:Compositional tailoring enables fine-tuning of thermoelectric (TE) transport parameters by synergistic modulation of electronic and vibrational properties. In the present work, the aspects of compositionally tailored defects have been explored in ZrNiSn-based half-Heusler (HH) TE materials to achieve high TE performance and cost effectiveness in n-type Hf-free HH alloys. In off-stoichiometric Ni-rich ZrNi1+xSn alloys in a low Ni doping limit (x < 0.1), excess Ni induces defects (Ni/vacancy antisite + interstitials), which tend to cause band structure modification. In addition, the structural similarity of HH and full-Heusler (FH) compounds and formation energetics lead to an intrinsic phase segregation of FH nanoscale precipitates that are coherently dispersed within the ZrNiSn HH matrix as nanoclusters. A consonance was achieved experimentally between these two competing mechanisms for optimal HH composition having both FH precipitates and Ni/vacancy antisite defects in the HH matrix by elevating the sintering temperature up to the solubility limit range of the ZrNiSn system. Defect-mediated optimization of electrical and thermal transport via carrier concentration tuning, energy filtering, and possibly all scale-hierarchical architecture resulted in a maximum ZT ≈ 1.1 at 873 K for the optimized ZrNi1.03Sn composition. Our findings highlight the realistic prospect of enhancing TE performance via compositional engineering approach for wide applications of TE.
Enhanced Thermoelectric Properties in P‐type Double Half‐Heusler Ti2−yHfyFeNiSb2−xSnx Compounds

Qingmei Wang,Xiaofang Li,Chen,Wenhua Xue,Xiaodong Xie,Feng Cao,Jiehe Sui,Yumei Wang,Xingjun Liu,Qian Zhang

DOI: https://doi.org/10.1002/pssa.202000096

2020-01-01

physica status solidi (a)

Abstract:Double half‐Heusler Ti 2 FeNiSb 2 ‐based compounds, which can be regarded as a combination of 17‐electron TiFeSb and 19‐electron TiNiSb, have a lower intrinsic thermal conductivity due to the smaller group velocity phonons and the disordered scattering by Fe/Ni. An enhanced room‐temperature Hall carrier concentration of ≈4.8 × 10 21 cm −3 is achieved by doping Sn on the Sb site in a series of Ti 2 FeNiSb 2− x Sn x ( x = 0.2, 0.3, 0.4, and 0.5) samples. Combined with the further decreased lattice thermal conductivity by alloying with Hf 2 FeNiSb 2 , a low lattice thermal conductivity of ≈1.95 W m −1 K −1 and a peak thermoelectric figure of merit (ZT) of ≈0.52 at 923 K are obtained in Ti 1.6 Hf 0.4 FeNiSb 1.7 Sn 0.3 , indicating the promising applications of double half‐Heusler compounds.
Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

Wuyang Ren,Hangtian Zhu,Jun Mao,Li You,Shaowei Song,Tian Tong,Jiming Bao,Jun Luo,Zhiming Wang,Zhifeng Ren

DOI: https://doi.org/10.1002/aelm.201900166

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Defect engineering has been identified as an effective strategy for improving thermoelectric performance by tailoring electron and phonon transport. TiNiSn is unique due to its naturally formed Ni interstitials, where the interstitial atoms enable strong phonon scattering that results in reduced lattice thermal conductivity, although an adverse effect on mobility is inevitable. Rather than pursuing the conventional strategy of strengthening the interstitial scattering to improve the performance of TiNiSn-based materials, an attempt is made to minimize the atomic disorder in order to enhance the mobility, which in turn favors a higher power factor. The altered bandgap, and electrical and thermal properties demonstrate that the interstitials can be effectively controlled by intentionally reducing the amount of Ni. Benefiting from the manipulation of the interstitials, significantly enhanced mobility is achieved in the Ni-deficient composition, resulting in peak power factor of approximate to 50 mu W cm(-1) K-2, which is comparable to the best n-type half-Heusler compounds. Additionally, the well-designed composition employing Ni interstitial manipulation and heavy-element doping exhibits peak ZT of approximate to 0.73, higher than that of all other reported TiNiSn-based materials. The unique role of interstitials in either electron or phonon transport is emphasized, and further encouragement for engineering thermoelectric properties by manipulating intrinsic disorder, especially in materials with complex structures, is provided.
Enhanced thermoelectric performance in Ti(Fe, Co, Ni)Sb pseudo-ternary Half-Heusler alloys

Qingmei Wang,Xiaodong Xie,Shan Li,Zongwei Zhang,Xiaofang Li,Honghao Yao,Chen Chen,Feng Cao,Jiehe Sui,Xingjun Liu,Qian Zhang

DOI: https://doi.org/10.1016/j.jmat.2020.12.015

IF: 8.589

2021-07-01

Journal of Materiomics

Abstract:Ti(Fe, Co, Ni)Sb-based half-Heusler alloys were synthesized by levitation melting, ball milling and SPS.The carrier concentration and the density of states effective mass were significantly increased by Co doping.The lattice thermal conductivity was decreased due to the point defect scattering induced by Hf alloying.●Peak ZTs of ∼0.65 and ∼0.85 at 973 K were achieved in n-type and p-type Ti(Fe, Co, Ni)Sb-based materials, respectively.TiFe0.5Ni0.5Sb-based half-Heusler compounds have the intrinsic low lattice thermal conductivity and the adjustable band structure. Inspired by the previously reports to achieve both p- and n-type components by tuning the ratio of Fe and Ni based on the same parent TiFe0.5Ni0.5Sb, we selected Co as the amphoteric dopants to prepare both n-type and p-type pseudo-ternary Ti(Fe, Co, Ni)Sb-based half-Heusler alloys. The carrier concentration, as well as the density of states effective mass was significantly increased by Co doping, contributing to the enhanced power factor of 1.80 mW m-1 K-2 for n-type TiFe0.3Co0.2Ni0.5Sb and 2.21 mW m-1 K-2 for p-type TiFe0.5Co0.15Ni0.35Sb at 973 K. Combined with the further decreased lattice thermal conductivity due to the strain field and mass fluctuation scattering induced by alloying Hf on the Ti site, peak ZTs of 0.65 in n-type Ti0.8Hf0.2Fe0.3Co0.2Ni0.5Sb and 0.85 in p-type Ti0.8Hf0.2Fe0.5Co0.15Ni0.35Sb were achieved at 973 K, which is of great significance for the thermoelectric power generation applications.<ol class="links-for-figure"><li><a class="anchor download-link u-font-sans" href="https://ars.els-cdn.com/content/image/1-s2.0-S2352847820305396-fx1_lrg.jpg">Download : Download high-res image (316KB)</a></li><li><a class="anchor download-link u-font-sans" href="https://ars.els-cdn.com/content/image/1-s2.0-S2352847820305396-fx1.jpg">Download : Download full-size image</a></li></ol>

materials science, multidisciplinary,chemistry, physical,physics, applied
Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr x NiSn Synthesized by a Modified Solid-State Reaction

Jun-Liang Chen,Hengquan Yang,Chengyan Liu,Jisheng Liang,Lei Miao,Zhongwei Zhang,Pengfei Liu,Kenta Yoshida,Chen Chen,Qian Zhang,Qi Zhou,Yuntiao Liao,Ping Wang,Zhixia Li,Biaolin Peng

DOI: https://doi.org/10.1021/acsami.1c14723

2021-10-07

Abstract:Half-Heusler alloys, which possess the advantages of high thermal stability, a large power factor, and good mechanical property, have been attracting increasing interest in mid-temperature thermoelectric applications. In this work, extra Zr-doped TiZrxNiSn samples were successfully prepared by a modified solid-state reaction followed by spark plasma sintering. It demonstrates that extra Zr doping could not only improve the power factor on account of an increase in the Seebeck coefficient but also suppress the lattice thermal conductivity originated from the strengthened phonon scattering by the superlattice nanodomains and the secondary nanoparticles. As a consequence, an increased power factor of 3.29 mW m–1 K–2 and a decreased lattice thermal conductivity of 1.74 W m–1 K–1 are achieved in TiZr0.015NiSn, leading to a peak ZT as high as 0.88 at 773 K and an average ZT value up to 0.62 in the temperature range of 373–773 K. This work gives guidance for optimizing the thermoelectric performance of TiNiSn-based alloys by modulating the microstructures on the secondary nanophases and superlattice nanodomains.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c14723.Disorder scattering parameter, Rietveld refinement of XRD data, temperature-dependent thermoelectric performance of the TiNiSn-based samples, SEM images of the freshly fractured surface with different scales for TiZrxNiSn (x = 0, 0.005, 0.015, 0.025) samples, local grain size statistics of the TiZr0.015NiSn sample, EDS mapping images of the TiZr0.015NiSn sample, GEM approach, and SKB modeling and Debye–Callaway model simulation (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Superstrengthening Bi_{2}Te_{3} Through Nanotwinning.

Guodong Li,Umut Aydemir,Sergey I. Morozov,Max Wood,Qi An,Pengcheng Zhai,Qingjie Zhang,William A. Goddard,G. Jeffrey Snyder

DOI: https://doi.org/10.1103/physrevlett.119.085501

IF: 8.6

2017-01-01

Physical Review Letters

Abstract:Bismuth telluride (Bi2Te3) based thermoelectric (TE) materials have been commercialized successfully as solid-state power generators, but their low mechanical strength suggests that these materials may not be reliable for long-term use in TE devices. Here we use density functional theory to show that the ideal shear strength of Bi2Te3 can be significantly enhanced up to 215% by imposing nanoscale twins. We reveal that the origin of the low strength in single crystalline Bi2Te3 is the weak van derWaals interaction between the Te1 coupling two Te1-Bi-Te2-Bi-Te1 five-layer quint substructures. However, we demonstrate here a surprising result that forming twin boundaries between the Te1 atoms of adjacent quints greatly strengthens the interaction between them, leading to a tripling of the ideal shear strength in nanotwinned Bi2Te3 (0.6 GPa) compared to that in the single crystalline material (0.19 GPa). This grain boundary engineering strategy opens a new pathway for designing robust Bi2Te3 TE semiconductors for high-performance TE devices.
Improving thermoelectric properties of ZrPtSn-based half-Heusler compound by Sb doping

Chu-Kun Dai,Qing-Feng Song,Li Xie,Rui-Heng Liu,Sheng-Qiang Bai,Li-Dong Chen

DOI: https://doi.org/10.1007/s12598-021-01752-x

IF: 6.318

2021-05-15

Rare Metals

Abstract:Bipolar diffusion appeared at high temperature leads to the performance deterioration of thermoelectric (TE) materials, and TE materials with large band gaps have high intrinsic excitation temperature, which is important for high-temperature application. Previous calculation has revealed that ZrPtSn half-Heusler has a large band gap (~ 1.0 eV) among various half-Heusler compounds, which may be a good candidate for thermoelectric generators at high temperature. In this study, the structure and TE properties of ZrPtSn1-xSbx half-Heusler compounds were studied by optimization of carrier concentration through Sb doping. With 8% Sb substitution at Sn sites, the enhanced power factor of 23 μW·cm−1·K−2 at 850 K and figure of merit (zT) value of 0.5 at 1000 K were reported in n-type ZrPtSn compounds. Further, the effect of Ni alloying in ZrPt1-yNiySn0.92Sb0.08 compounds were also investigated. With the strong point defect scattering for phonons, the lattice thermal conductivity is decreased by ~ 40% at room temperature compared with that of unalloyed compounds. However, due to the depressed carrier mobility, the final zT does not show much superiority with ZrPtSn0.92Sb0.08 sample.<h3 class="a-plus-plus">Graphic abstract</h3>

materials science, multidisciplinary,metallurgy & metallurgical engineering
Enhanced thermoelectric performance of orientated and defected SnTe

Sihui Li,Jiwu Xin,Wang Li,Yang Tao,Tian Xu,Bo Xiao,Yubo Luo,Qinghui Jiang,Junyou Yang

DOI: https://doi.org/10.1016/j.jallcom.2020.157634

IF: 6.2

2021-03-01

Journal of Alloys and Compounds

Abstract:Enhancing the thermoelectric performance of SnTe lies in the core of research, which has inspired effective and novel approaches such as point defects, electronic band structure engineering and nanostructuring. Herein, we propose an alternative route to enhance the thermoelectric performance of SnTe through a “top-down” hot deformation (HD) process. The HD induces a special orientation in the rock-salt SnTe, which is exclusive to layered structure materials and seldom achieved in cubic structure materials. In addition, the HD creates high density lattice defects such as dislocations and strain fluctuations in SnTe, a highly desired microstructure feature for low lattice thermal conductivity. As a result, the HD enables ∼45% and ∼58% enhancement in the maximum figure of merit ZT along the in-plane and cross-plane directions of SnTe. Such significant enhancement indicates great potential for the HD in enhancing the ZT of SnTe, which is extendable to other thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering

Enhanced Ideal Strength of Thermoelectric Half-Heusler TiNiSn by Sub-Structure Engineering

Enhanced thermoelectric performance in TiNiSn-based half-Heuslers

Thermoelectric Performance of Half-Heusler Compounds TiNiSn and TiCoSb

Fabrication and Thermoelectric Properties of Fine-Grained TiNiSn Compounds

Significant enhancement in thermoelectric properties of half-Heusler compound TiNiSn by grain boundary engineering

Enhancing Thermoelectric Performance of Tinisn Half-Heusler Compounds Via Modulation Doping

Enhancing the Thermoelectric Performance of Self-Defect TiNiSn: A First-Principles Calculation

Enhanced Strength Through Nanotwinning in the Thermoelectric Semiconductor InSb

Improving the Thermoelectric Properties of Half-Heusler TiNiSn Through Inclusion of a Second Full-Heusler Phase: Microwave Preparation and Spark Plasma Sintering of TiNi1+xSn

Improved Thermoelectric Properties of TiNiSn Through Enhancing Strain Field Fluctuation

Computational Search for Better Thermoelectric Performance in Nickel-Based Half-Heusler Compounds

Engineering the Thermoelectric Transport in Half‐Heusler Materials through a Bottom‐Up Nanostructure Synthesis

Improving thermoelectric performance of TiNiSn by mixing MnNiSb in the half-Heusler structure

Compositional Tailoring for Realizing High Thermoelectric Performance in Hafnium-Free n-Type ZrNiSn Half-Heusler Alloys

Enhanced Thermoelectric Properties in P‐type Double Half‐Heusler Ti2−yHfyFeNiSb2−xSnx Compounds

Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

Enhanced thermoelectric performance in Ti(Fe, Co, Ni)Sb pseudo-ternary Half-Heusler alloys

Strategy of Extra Zr Doping on the Enhancement of Thermoelectric Performance for TiZr x NiSn Synthesized by a Modified Solid-State Reaction

Superstrengthening Bi_{2}Te_{3} Through Nanotwinning.

Improving thermoelectric properties of ZrPtSn-based half-Heusler compound by Sb doping

Enhanced thermoelectric performance of orientated and defected SnTe