Polarization-controlled Tunable Rectifying Behaviors in Highly Oriented (k,na)nbo3/lanio3heterostructures on Silicon

Hanni Xu,Yi Liu,Bo Xu,Yidong Xia,Genshui Wang,Jiang Yin,Zhiguo Liu
DOI: https://doi.org/10.1088/0022-3727/49/37/375105
2016-01-01
Abstract:We report polarization-controlled tunable rectifying behaviors in (K,Na)NbO3 (KNN)/LaNiO3 (LNO) heterostructures on silicon. The heterostructure shows a forward diode behavior at both the high resistance state and the low resistance state. The amplitude dependent rectifying features are attributed to the ferroelectric modulation effect on both the width of the depletion region and the height of the potential barrier at the KNN/LNO interface. By controlling the domain configurations using the writing voltage, the rectifying behaviors can be regulated and immediate states can be tuned. Our work shows the potential applications of KNN films in ferroelectric memristors.
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