Graphene Layers on Bimetallic Ni/Cu(111) Surface and Near Surface Alloys in Controlled Growth of Graphene

Xin Bian,Qiang Wang,Xinyan Wang,Lu Wang,Wei-qi Li,Guang-hui Chen,Hongjun Zhu

DOI: https://doi.org/10.1039/c6ra14315f

IF: 4.036

2016-01-01

RSC Advances

Abstract:Bimetallic alloy is more effective than pure metal for controlled growth of high-quality graphene.

What problem does this paper attempt to address?

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Yaping Wu,Harry Chou,Hengxing Ji,Qingzhi Wu,Shanshan Chen,Wei Jiang,Yufeng Hao,Junyong Kang,Yujie Ren,Richard D Piner,Rodney S Ruoff

DOI: https://doi.org/10.1021/nn301689m

IF: 17.1

2012-01-01

ACS Nano

Abstract:Strongly coupled bilayer graphene (i.e., AB stacked) grows particularly well on commercial "90-10" Cu-Ni alloy foil. However, the mechanism of growth of bilayer graphene on Cu-Ni alloy foils had not been discovered. Carbon isotope labeling (sequential dosing of (12)CH(4) and (13)CH(4)) and Raman spectroscopic mapping were used to study the growth process. It was learned that the mechanism of graphene growth on Cu-Ni alloy is by precipitation at the surface from carbon dissolved in the bulk of the alloy foil that diffuses to the surface. The growth parameters were varied to investigate their effect on graphene coverage and isotopic composition. It was found that higher temperature, longer exposure time, higher rate of bulk diffusion for (12)C vs(13)C, and slower cooling rate all produced higher graphene coverage on this type of Cu-Ni alloy foil. The isotopic composition of the graphene layer(s) could also be modified by adjusting the cooling rate. In addition, large-area, AB-stacked bilayer graphene transferrable onto Si/SiO(2) substrates was controllably synthesized.
Segregation Growth of Graphene on Cu–Ni Alloy for Precise Layer Control

Xun Liu,Lei Fu,Nan Liu,Teng Gao,Yanfeng Zhang,Lei Liao,Zhongfan Liu

DOI: https://doi.org/10.1021/jp202933u

2011-01-01

Abstract:A facile way to segregate wafer-size graphene with controllable layer number using Cu-Ni binary alloy under vacuum annealing condition is presented here. Increasing atomic percentage of Ni in Cu-Ni alloy was found to segregate thicker uniform graphene. To date, over 95% monolayer and 91% bilayer graphene films have been prepared by only changing atomic percentage of Ni in Cu-Ni alloy, respectively. The synergetic combination of the distinct carbon solubilities of Cu and Ni and the well-known segregation phenomenon is believed to be responsible for the formation of high-quality uniform few layer graphene. Together with the easy detachment from growth substrates, we believe this facile segregation technique will offer a great driving force for graphene research.
Growing highly ordered Pt and Mn bimetallic single atomic layers over graphdiyne

Zhiqiang Zheng,Lu Qi,Xiaoyu Luan,Shuya Zhao,Yurui Xue,Yuliang Li

DOI: https://doi.org/10.1038/s41467-024-51687-x

2024-08-26

Abstract:Controlling the precise growth of atoms is necessary to achieve manipulation of atomic composition and atomic position, regulation of electronic structure, and an understanding of reactions at the atomic level. Herein, we report a facile method for ordered anchoring of zero-valent platinum and manganese atoms with single-atom thickness on graphdiyne under mild conditions. Due to strong and incomplete charge transfer between graphdiyne and metal atoms, the formation of metal clusters and nanoparticles can be inhibited. The size, composition and structure of the bimetallic nanoplates are precisely controlled by the natural structure-limiting effect of graphdiyne. Experimental characterization clearly demonstrates such a fine control process. Electrochemical measurements show that the active site of platinum-manganese interface on graphdiyne guarantees the high catalytic activity and selectivity (~100%) for alkene-to-diol conversion. This work lays a solid foundation for obtaining high-performance nanomaterials by the atomic engineering of active site.
Tuning adlayer-substrate interactions of graphene/h-BN heterostructures on Cu(111)–Ni and Ni(111)–Cu surface alloys

Jianmei Huang,Qiang Wang,Pengfei Liu,Guang-hui Chen,Yanhui Yang

DOI: https://doi.org/10.1039/d0ra08622c

IF: 4.036

2021-01-01

RSC Advances

Abstract:The evolution of the interface and interaction of h-BN and graphene/h-BN (Gr/h-BN) on Cu(111)–Ni and Ni(111)–Cu surface alloys versus the Ni/Cu atomic percentage on the alloy surface were comparatively studied by DFT-D2, including critical long-range van der Waals forces.

chemistry, multidisciplinary
Surface stability and electronic structure of CuNi alloy (111) as a potential catalyst for graphene growth-a density-functional theory study

E B Yutomo,F A Noor,T Winata

DOI: https://doi.org/10.1088/1742-6596/2243/1/012045

2022-06-23

Journal of Physics: Conference Series

Abstract:Controlling the number of graphene layers during its growth is essential in realizing its practical application as a transparent conductive electrode. Growth with CuNi alloy catalysts can effectively control the number of graphene layers. However, research at the experimental level has not been supported by research at the theoretical level. Therefore, we will study the growth of graphene on a CuNi catalyst using the density functional theory (DFT). However, in this paper, we only focus on studying the stability of the surface of CuNi as a preliminary study. Based on geometry optimization, CuNi (111) has a wrinkled surface in the slab model due to the anisotropy shift of the atoms. Furthermore, CuNi (111) has a surface energy of 1.511 J/m 2 , which is between the surface energies of its components. This condition indicates that CuNi (111) has excellent stability. When forming CuNi alloy, electrons in the Cu 4s and Ni 3d orbitals have an enormous contribution in forming the metallic bonds indicated by a significant shift of the band center energy and change of the number of states at the Fermi level. Our results show that the CuNi system can become a potential catalyst for graphene growth.
Laser Controllable Growth of Graphene Via Ni-Cu Alloy Composition Modulation

Xiaohui Ye,Zhe Lin,Hongjun Zhang,Hongwei Zhu,Minlin Zhong

DOI: https://doi.org/10.1007/s40516-015-0016-1

2015-01-01

Lasers in Manufacturing and Materials Processing

Abstract:Graphene has many unique properties, most of them strongly depend on the number of layers. It is significant to develop a facile approach to realize the controllable growth of graphene with specific number of layers. We ever reported an efficient approach to grow graphene rapidly and locally by laser irradiation. In this work, we offers yet another important feature, to control the number of layers of graphene. Ni-Cu alloy has been reported to be used successfully as the catalyst for graphene growth with controllable number of layers. In that case, the Ni-Cu alloys with different compositions were normally formed by thermal evaporation. Here we provide an efficient way to fabricate the Ni-Cu alloy catalysts by laser cladding. Then the high power laser was employed to melt the Ni and Cu mixed powders. Different Ni-Cu alloy catalysts were formed in a high rate of 720 mm 2 /min with a thickness of 1.2 mm. Then the graphene with controllable layers was rapidly and locally grown on the Ni-Cu catalysts by laser irradiation at a high rate (18 cm 2 /min) at room temperature. We found that the Ni-Cu catalyst with 15 % Cu could be helpful to grow single layer graphene, which occupied 92.4 % of the entire film. Higher Cu content didn’t promote the growth due to the oxygen involved during the growth process. The controllable growth mechanism of graphene by laser processing was discussed. Combining the rapid catalyst fabrication and graphene synthesis make it a cost- and time-efficient method to produce the controllable graphene films.
Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Ting Cheng,Luzhao Sun,Zhirong Liu,Feng Ding,Zhongfan Liu

DOI: https://doi.org/10.3866/pku.whxb202012006

2020-01-01

Acta Physico-Chimica Sinica

Abstract:Graphene has attracted great attention owing to its excellent physical and chemical properties and potential applications. Presently, we can grow large-scale single-crystal graphene on transition metal substrates, especially Cu(111) or CuNi(111) surfaces, using the chemical vapor deposition (CVD) method. To optimize graphene synthesis for large-scale production, understanding the growth mechanism at the atomic scale is critical. Herein, we summarize the theoretical studies on the roles of the metal substrate in graphene CVD growth and the related mechanisms. Firstly, the metal substrate catalyzes the carbon feedstock decomposition. The dissociation of CH4, absorption, and diffusion of active carbon species on various metal surfaces are discussed. Secondly, the substrate facilitates graphene nucleation with controllable nucleation density. The dissociation and diffusion of carbon atoms on the CuNi alloy surface with different Ni compositions are revealed. The metal substrate also catalyzes the growth of graphene by incorporating C atoms from the substrate into the edge of graphene and repairing possible defects. On the most used Cu(111), each armchair site on the edge of graphene is intended to be passivated by a Cu atom and lowers the barrier of incorporating C atoms into the graphene edge. The potential route of healing the defects during graphene CVD growth is summarized. Moreover, the substrate controls the orientation of the epitaxial graphene. The graphene edge-catalyst interaction is strong and is responsible for the orientation determination of a small graphene island in the early nucleation stage. There are three modes for graphene growth on metal substrate, i.e. embedded mode, step-attached mode and onterrace mode, and the preferred growth modes are not all alike but vary from metal to metal. On a soft metal like Cu(111), graphene tends to grow in step-attached or embedded modes and therefore has a fixed orientation relative to the metal crystal lattice. Finally, the formation of wrinkles and step bunches in graphene because of the difference in thermal expansion coefficients between graphene and the metal substrate is discussed. The large friction force and strong interaction between graphene and the substrate make it energetically unfavorable for the formation of wrinkles. Different from the formation of wrinkles, the main driving force behind metal surface step-bunching in CVD graphene growth, even in the absence of a compression strain is revealed. Although significant effort is still required to adequately understand graphene catalytic growth, these theoretical studies offer guidelines for experimental designs. Furthermore, we provide the key issues to be explored in the future.
Rational Design of Binary Alloys for Catalytic Growth of Graphene via Chemical Vapor Deposition

Yanglizhi Li,Luzhao Sun,Haiyang Liu,Yuechen Wang,Zhongfan Liu

DOI: https://doi.org/10.3390/catal10111305

IF: 3.9

2020-11-12

Catalysts

Abstract:Chemical vapor deposition is the most promising technique for the mass production of high-quality graphene, in which the metal substrate plays a crucial role in the catalytic decomposition of the carbon source, assisting the attachment of the active carbon species, and regulating the structure of the graphene film. Due to some drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to their complementarity in the catalytic growth of graphene. In this review, we focus on the rational design of binary alloys, such as Cu/Ni, Ni/Mo, and Cu/Si, to control the layer numbers and growth rate of graphene. By analyzing the elementary steps of graphene growth, general principles are summarized in terms of the catalytic activity, metal–carbon interactions, carbon solubility, and mutual miscibility. Several challenges in this field are also put forward to inspire the novel design of alloy catalysts and the synthesis of graphene films bearing desirable properties.

chemistry, physical
Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

Boya Dai,Lei Fu,Zhiyu Zou,Min Wang,Haitao Xu,Sheng Wang,Zhongfan Liu

DOI: https://doi.org/10.1038/ncomms1539

IF: 16.6

2011-01-01

Nature Communications

Abstract:Controlled growth of high-quality graphene is still the bottleneck of practical applications. The widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. Here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. As demonstrated by an Ni–Mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. This type of process engineering has been used to grow strictly single-layer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. With simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications.
Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Lin Li,Minghui Li,ruijie Zhang,Qing Zhang,Hang Li,Dechao Geng

DOI: https://doi.org/10.1039/d3nj03345g

IF: 3.3

2023-10-27

New Journal of Chemistry

Abstract:Chemical vapor deposition (CVD) method has been widely used for growing large-scale graphene film on metal substrate. Due to drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to the exceptional characteristics derived from different metals, making them an enticing choice. In this study, a novel liquid Cu-Zn alloy catalyst was introduced for the first time in the preparation of millimeter-sized, single-crystal monolayer graphene using the CVD approach. Notably, the graphene synthesized on the liquid Cu-Zn alloy catalyst exhibited distinct advantages in terms of size compared to graphene grown on the conventional liquid Cu catalyst. The introduction of Zn onto the liquid Cu surface effectively impedes the nucleation density of graphene on the alloy substrate, also resulting in increased graphene size. The uniformity of large-sized graphene's electrical properties was confirmed by 2D resistivity measurement and tests on field effect transistor (FET) devices. This work put forward to inspire the novel design of alloy catalysts and the synthesis of graphene film bearing desirable properties.

chemistry, multidisciplinary
Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Yagang Yao,Zhuo Li,Ziyin Lin,Kyoung-Sik Moon,Josh Agar,Chingping Wong

DOI: https://doi.org/10.1021/jp109002p

2011-01-01

Abstract:The effects of graphene growth parameters on the number of its layers were systematically studied and a new growth mechanism on Cu substrate was thus proposed. Through the investigation of the graphene growth parameters, including growth substrate types, carrier gases, types of carbon sources, growth temperature, growth time, and cooling rates, we found that graphene grows on Cu substrates via a surface-catalyzed process, followed by a templated growth. We can obtain either single layer graphene (SLG) or few-layer graphene (FLG) by suppressing the subsequent templated growth with a low concentration of carbon source gases and a high concentration of H-2. Our findings provide important guidance toward the synthesis of large-scale and high-quality FLGs and SLGs. This is expected to widen both the research and applications of graphene.
Self-Assembly Graphene Arrays on a Liquid Cu–Ag Alloy

Yixuan Fan,Menghan Li,Xiangzheng Jia,Lin Li,Qing Zhang,Enlai Gao,Dechao Geng,Wenping Hu

DOI: https://doi.org/10.1021/acs.chemmater.1c02390

IF: 10.508

2021-11-08

Chemistry of Materials

Abstract:The alloy catalysts have been introduced in synthesizing highly oriented and monolayer graphene because of the combination of excellent features of different metals. However, precise manipulation of nucleation and growth stages on the alloy surface has not been realized and thus fabrication of large-sized 2D crystal arrays has met with limited success. Under this circumstance, quest for novelty alloy catalysts has been attracting intensive efforts. Herein, with the introduction of a liquid Cu–Ag alloy, precise engineering of nucleation and growth of graphene has been achieved. Moreover, by properly modulating the composition of the Cu–Ag alloy, the shape evolution of graphene single crystals is also detected and thus results in controllable formation of round-shaped graphene arrays. We further explain the growth mechanism of graphene on the liquid Cu–Ag catalysts by binding energy between graphene and metal surfaces. It is believed that the high-quality graphene array growth on a liquid alloy may turn on new territory for controlling surface engineering of the catalyst and paving the way toward industrial production and commercial applications.

materials science, multidisciplinary,chemistry, physical
A Ternary Alloy Substrate to Synthesize Monolayer Graphene with Liquid Carbon Precursor

Wei Gan,Nannan Han,Chao Yang,Peng Wu,Qin Liu,Wen Zhu,Shuangming Chen,Chuanqiang Wu,Muhammad Habib,Yuan Sang,Zahir Muhammad,Jijun Zhao,Li Song

DOI: https://doi.org/10.1021/acsnano.6b06144

IF: 17.1

2017-01-01

ACS Nano

Abstract:Here we demonstrate a ternary Cu2NiZn alloy substrate for controllably synthesizing monolayer graphene using a liquid carbon precursor cyclohexane via a facile CVD route. In contrast with elemental metal or bimetal substrates, the alloy-induced synergistic effects that provide an ideal metallic platform for much easier dehydrogenation of hydrocarbon molecules, more reasonable strength of adsorption energy of carbon monomer on surface and lower formation energies of carbon chains, largely renders the success growth of monolayer graphene with higher electrical mobility and lower defects. The growth mechanism is systemically investigated by our DFT calculations. This study provides a selective route for realizing high-quality graphene monolayer via a scalable synthetic method by using economic liquid carbon supplies and multialloy metal substrates.
High-quality Monolayer Graphene Synthesis on Pd Foils Via the Suppression of Multilayer Growth at Grain Boundaries.

Donglin Ma,Mengxi Liu,Teng Gao,Cong Li,Jingyu Sun,Yufeng Nie,Qingqing Ji,Yu Zhang,Xiuju Song,Yanfeng Zhang,Zhongfan Liu

DOI: https://doi.org/10.1002/smll.201400421

IF: 13.3

2014-01-01

Small

Abstract:The segregation of carbon from metals in which carbon is highly soluble, such as Ni (≈1.1 atom% at 1000 °C), is a typical method for graphene growth; this method differs from the surface-catalyzed growth of graphene that occurs on other metals such as Cu (<0.04 atom%). It has not been established whether strictly monolayer graphene could be synthesized through the traditional chemical vapor deposition route on metals where carbon is highly soluble, such as Pd (≈3.5 atom%). In this work, this issue is investigated by suppressing the grain boundary segregation using a pretreatment comprising the annealing of the Pd foils; this method was motivated by the fact that the typical thick growths at the grain boundaries revealed that the grain boundary functions as the main segregation channel in polycrystalline metals. To evaluate the high crystallinity of the as-grown graphene, detailed atomic-scale characterization with scanning tunneling microscopy is performed.
Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Li Lin,Jiayu Li,Huaying Ren,Ai Leen Koh,Ning Kang,Hailin Peng,H. Q. Xu,Zhongfan Liu

DOI: https://doi.org/10.1021/acsnano.6b00041

IF: 17.1

2016-01-01

ACS Nano

Abstract:The controlled growth of high-quality graphene on a large scale is of central importance for applications in electronics and optoelectronics. To minimize the adverse impacts of grain boundaries in large-area polycrystalline graphene, the synthesis of large single crystals of monolayer graphene is one of the key challenges for graphene production. Here, we develop a facile surface-engineering method to grow large single-crystalline monolayer graphene by the passivation of the active sites and the control of graphene nucleation on copper surface using the melamine pretreatment. Centimeter-sized hexagonal single-crystal graphene domains were successfully grown, which exhibit ultrahigh carrier mobilities exceeding 25,000 cm(2) V(-1) s(-1) and quantum Hall effects on SiO2 substrates. The underlying mechanism of melamine pretreatments were systematically investigated through elemental analyses of copper surface in the growth process of large single-crystals. This present work provides a surface design of a catalytic substrate for the controlled growth of large-area graphene single crystals.
Bimetallic Catalytic Growth of Boron Nitride Nanotubes

Liangjie Wang,Taotao Li,Xiaoyang Long,Xiaona Wang,Yancui Xu,Yagang Yao

DOI: https://doi.org/10.1039/c6nr08623c

IF: 6.7

2017-01-01

Nanoscale

Abstract:Boron nitride nanotubes (BNNTs) have outstanding properties and potential applications. However, the fundamental issue regarding the growth mechanism remains an open question. Herein, we design a bimetallic catalyst that dissolves B and N simultaneously, which has been proved to be key for BNNT growth.
Heterogeneous nucleation and growth of electrodeposited lithium metal on the basal plane of single-layer graphene

Qianqian Meng,Bing Deng,Huimin Zhang,Biyan Wang,Wenfeng Zhang,Yuehua Wen,Hai Ming,Xiayu Zhu,Yuepeng Guan,Yu Xiang,Meng Li,Gaoping Cao,Yusheng Yang,Hailin Peng,Hao Zhang,Yaqin Huang

DOI: https://doi.org/10.1016/j.ensm.2018.06.024

IF: 20.4

2019-01-01

Energy Storage Materials

Abstract:Lithium metal anode has attracted soaring attention for high energy batteries. However, uncontrollable growth of dendritic Li and high chemical reactivity with electrolyte incur serious safety issues, hindering its practical applications. Carbon materials and their composites with controllable structures and properties, have been explored to address these issues and show great potential for lithium anode protection as stable scaffolds or Li storage reservoirs. However, the study of heterogeneous nucleation and growth of Li on carbon surfaces, especially on the basal plane of graphite layers, which is the dominating surface for graphene, carbon nanotube, and many other advanced carbon materials, remains empty, attributing to the lack of a perfect (planar and clean) deposition substrate. Herein, we adopt a single-layer graphene grown on Cu foil as an ideal Li plating substrate to reveal the fundamental behavior of Li metal nucleation and growth on carbon surface for the first time. We demonstrate that single-layer graphene on Cu foil, with nearly perfect structure, has a higher energy barrier for Li nucleation than Cu. Thus, it is more likely to form isolated and thicker dendrite layer on the carbon basal plane, and continuous dendrite was formed easily from Li nuclei even at a low Li deposited capacity of 30 µA h cm−2. Thereby, carbon materials with basal plane-dominated structures are proved lithiophobic and not suitable for the matrix of Li-metal anode. Our approach could lead to the realization of fundamental understanding of Li metal heterogeneous nucleation and growth on carbon surface with various electronic properties.
Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Wei,Jiaqi Pan,Chanan Euaruksakul,Yang,Yi Cui,Qiang Fu,Xinhe Bao

DOI: https://doi.org/10.1007/s12274-020-2638-7

IF: 9.9

2020-01-01

Nano Research

Abstract:The lateral incorporation of graphene and hexagonal boron nitride (h-BN) onto a substrate surface creates in-plane h-BN/graphene heterostructures, which have promising applications in novel two-dimensional electronic and photoelectronic devices. The quality of h-BN/graphene domain boundaries depends on their orientation, which is crucial for device performances. Here, the heteroepitaxial growth of graphene along the edges of h-BN domains on Ni(111) surfaces as well as the growth dynamics of h-BN using chemical vapor deposition (CVD) are in situ investigated by surface imaging measurements. The nucleating seed effect of h-BN has been revealed, which contributes to the single orientation of heterostructures with epitaxial stitching. Further, the growth of h-BN prior to that of graphene is essential to obtain high-quality in-plane h-BN/graphene heterostructures on Ni(111). The “compact to fractal” shape transition of h-BN domains appears with the increasing surface concentration of the growth blocks, suggesting that the dynamic growth mechanism follows diffusion-limited aggregation (DLA) but not reaction-limited aggregation (RLA). Our results provide insights into the synthesis of well-defined h-BN/graphene heterostructures and deep understanding of the growth dynamics of h-BN on metal surfaces.
Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Gang Wang,Jinhua Li,Da Chen,Li Zheng,Xiaohu Zheng,Qinglei Guo,Xing Wei,Guqiao Ding,Miao Zhang,Zengfeng Di,Su Liu

DOI: https://doi.org/10.1063/1.4879555

IF: 4

2014-05-26

Applied Physics Letters

Abstract:Pure Ni film is the first metal catalyst that can generate graphene with small domains and variable thickness across the film. The lack of control over layer number is attributed to the high carbon solubility of Ni. We designed a combinatorial Ni/Si system, which enables the direct growth of monolayer graphene via chemical vapor deposition method. In this system, Si was introduced as the carbon diffusion barriers to prevent carbon diffusing into Ni film. The designed system fully overcomes the fundamental limitations of Ni and provides a facile and effective strategy to yield homogenous monolayer graphene over large area. The field effect transistors were fabricated and characterized to determine the electrical properties of the synthesized graphene film. Furthermore, this technique can utilize standard equipments available in semiconductor technology.

physics, applied
Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates

Shiwei Wang,Chunyang Zheng,Xiucai Sun,Yixuan Zhao,Shengping Zhang,Qingqing Liu,Jiawei Yang,Yeshu Zhu,Jiaxin Shao,Mingyue Wei,Wanjian Yin,Jianbo Yin,Li Lin,Kaicheng Jia,Zhongfan Liu

DOI: https://doi.org/10.1021/acs.jpcc.3c01586

2023-01-01

Abstract:Bilayer graphene with an AB-stacking sequence has emerged as one of the promising materials owing to its unique band-gap structure and the fascinating potential in electronic and photonic applications. However, the chemical vapor deposition growth of bilayer graphene on Cu substrates still suffers from limited bilayer coverage, poor uniformity, and random distribution of the stacking order. Herein, we demonstrated an efficient method to synthesize centimeter-sized graphene films with a bilayer ratio of over 80% on space-confined Cu substrates. Moreover, the stacking order of the as-obtained bilayer graphene films was proven to be 100% AB-stacking structure by transmission electron microscopy and Raman characterization. Band-gap tunability and uniform optical transmittance also confirmed the high quality of as-obtained bilayer graphene. This work provides a new insight into the growth of graphene with controlled layer thickness and a new choice for the production of AB-stacked bilayer graphene films.

Graphene Layers on Bimetallic Ni/Cu(111) Surface and Near Surface Alloys in Controlled Growth of Graphene

Growth mechanism and controlled synthesis of AB-stacked bilayer graphene on Cu-Ni alloy foils.

Segregation Growth of Graphene on Cu–Ni Alloy for Precise Layer Control

Growing highly ordered Pt and Mn bimetallic single atomic layers over graphdiyne

Tuning adlayer-substrate interactions of graphene/h-BN heterostructures on Cu(111)–Ni and Ni(111)–Cu surface alloys

Surface stability and electronic structure of CuNi alloy (111) as a potential catalyst for graphene growth-a density-functional theory study

Laser Controllable Growth of Graphene Via Ni-Cu Alloy Composition Modulation

Roles of Transition Metal Substrates in Graphene Chemical Vapor Deposition Growth

Rational Design of Binary Alloys for Catalytic Growth of Graphene via Chemical Vapor Deposition

Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

Liquid Cu-Zn Catalyzed Growth of Graphene Single-crystals

Controlled Growth of Multilayer, Few-Layer, and Single-Layer Graphene on Metal Substrates

Self-Assembly Graphene Arrays on a Liquid Cu–Ag Alloy

A Ternary Alloy Substrate to Synthesize Monolayer Graphene with Liquid Carbon Precursor

High-quality Monolayer Graphene Synthesis on Pd Foils Via the Suppression of Multilayer Growth at Grain Boundaries.

Surface Engineering of Copper Foils for Growing Centimeter-Sized Single-Crystalline Graphene.

Bimetallic Catalytic Growth of Boron Nitride Nanotubes

Heterogeneous nucleation and growth of electrodeposited lithium metal on the basal plane of single-layer graphene

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Direct growth of single-layer graphene on Ni surface manipulated by Si barrier

Controlled Growth of Bilayer Graphene on Space-Confined Cu Substrates