Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the linking boundaries. More importantly, we find that the atomically sharp zigzag-type boundaries dominate the patching interface between graphene and h-BN as demonstrated by atomic-scale STM images. To understand the physical origin of the atomic linking of the h-BN-G heterostructures, we also perform density functional theory (DFT) calculations, including geometry optimizations and binding energy calculations for different kinds of linking interfaces. The calculated results reconfirm that graphene prefers to grow on the h-BN domain edges and form zigzag linking boundaries. Besides the atomic structures on the linking interfaces, the electronic characteristics are also of particular importance. It is worth noting that the substrates coupled strongly with graphene by pi-d orbital hybridization (such as Rh(111) and Ru(0001)), lead to downward shift of graphene pi-bands away from the Fermi level, or decay of the intrinsic electronic structure of graphene. In this regard, the influence of h-BN on the electronic property of graphene is hard to identify on such h-BN-G heterostructures. The weakly coupled Ir(111) is chosen to be a perfect substrate to investigate the interface electronic properties of h-BN-G heterostructure due to the absence of substrate electronic doping effect. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the linking boundaries on Ir(111). Therefore, the present work offers a deep insight into the h-BN-G boundary structures and the effect of adlayer-substrate coupling both geometrically and electronically.

Tuning adlayer-substrate interactions of graphene/h-BN heterostructures on Cu(111)–Ni and Ni(111)–Cu surface alloys

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

Graphene Layers on Bimetallic Ni/Cu(111) Surface and Near Surface Alloys in Controlled Growth of Graphene

Dynamic Observation of In-Plane H-Bn/graphene Heterostructures Growth on Ni(111)

Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures

Surface stability and electronic structure of CuNi alloy (111) as a potential catalyst for graphene growth-a density-functional theory study

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

Mn Atomic Layers under Inert Covers of Graphene and Hexagonal Boron Nitride Prepared on Rh(111)

First‐principles study on the adhesive and electronic property of c‐BN(111)/Cu(111) interface

Quasi-freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary.

Strong Adlayer-Substrate Interactions "break" the Patching Growth of H-Bn Onto Graphene on Re(0001).

Interfacial Coupling Induced Discrete Orientation of Epitaxial Graphene on High‐Index Cu Substrates

Interface modulation mechanism of alloying elements on the interface interaction and mechanical properties of graphene/copper composites

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy

Tuning electronic and optical properties of graphene/h-BN heterobilayer via surface modification

Creating a Nanospace under an H-Bn Cover for Adlayer Growth on Nickel(111)

The Effect of H-Bn Buffer Layers in Bilayer Graphene on Co (111)

Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges.

In situ epitaxial engineering of graphene and h-BN lateral heterostructure with a tunable morphology comprising h-BN domains

Potential Mechanisms of Interstitial Atomic Enhancement and Interface Failure Behavior in Ni 3 Co/Cu Systems

Intercalation of Mn in graphene/Cu(111) interface: insights to the electronic and magnetic properties from theory