Abstract:Spatially non-uniform electrical performance in ZnO varistor ceramics, which restricts application for higher energy absorption capability, is investigated in terms of electronic relaxations corresponding to intrinsic point defects. Decreased breakdown field and nonlinear coefficient are observed from 135.5 V/mm and 53 in central area to 122.0 V/mm and 20 in peripheral area as well as significantly increased leakage current density from 3.4 mu A/cm(2) to 18.3 mu A/cm(2). From microstructure analysis, grain size distribution is found relatively homogeneous, suggesting that electrically non-uniform grain boundaries should be responsible for divergent electrical properties. Investigation via energy dispersive spectrometer (EDS) shows higher Zn/O ratio in peripheral area, indicating higher possibility of generating intrinsic point defects like zinc interstitials and oxygen vacancies. This is further verified via dielectric spectroscopy that the densities of zinc interstitials and oxygen vacancies are both larger in peripheral area than those in central area. Oxygen is easier to be removed from ZnO lattice and diffuse into atmosphere during high-temperature sintering process, resulting in larger amount of oxygen vacancies in peripheral area. Meanwhile, more zinc atoms are removed from lattice and form interstitials as a result of distortion of ZnO lattice in peripheral area. Increased donor density in peripheral area attributed by oxygen vacancies and zinc interstitials results in decreased Schottky barrier height. Non-uniform distribution of Schottky barrier height is the origin of overall electrical inhomogeneity.

Electrical Degradation of Double-Schottky Barrier in ZnO Varistors

Research progress of degradation mechanism of ZnO varistors

The Effect of Point Defects on DC Degradation of ZnO Varistors

Zinc Interstitial As A Universal Microscopic Origin for the Electrical Degradation of Zno-Based Varistors under the Combined Dc and Temperature Condition

Multiscale Defect Responses in Understanding Degradation in Zinc Oxide Varistor Ceramics

An analytic approach to the degradation of double-Schottky barrier: Theoretical prediction of V O 0 –Zn i 2+ :Zn i 2+ as dominant mobile ion in ZnO electroceramic

DC Aging Mechanism of Co2O3-Doped ZnO Varistors

Aging Characteristics and Mechanisms of ZnO Nonlinear Varistors

Advances in ZnO–Bi 2 O 3 Based Varistors

The Effect of DC degradation and heat-treatment on defects in ZnO varistor

Role of Inhomogeneous Intrinsic Point Defect Distribution on Electrical Properties in ZnO Varistor Ceramics

DC Degradation of ZnO Varistor and Its Restorability by Heat-Treatment

Steadily Decreasing Power Loss of a Double Schottky Barrier Originating from the Dynamics of Mobile Ions with Stable Interface States

Non-monotonically Changes in Double Schottky Barrier of MnCO3-doped ZnO Varistors During DC Aging

Understanding Of Dc Degradation Of Zno Varistor Ceramics From The Aspect Of High-Temperature Relaxation

Investigation of Electrical Inhomogeneity in ZnO Varistor Ceramics Based on Electronic Relaxations

Transient conduction of ZnO varistors under moderate time-varying voltages: Dynamics of interfacial charges of the double Schottky barrier

Scattered Phenomenon of Energy Absorption Capabilities of ZnO Varistors

The Degradation of Epoxy Resin-Coated ZnO Varistors at Elevated Temperatures and Ambient Humidity Conditions

Degradation Phenomena Due to Humidity in Low Voltage ZnO Varistors

Investigation on Defect Structure in ZnO Varistor Ceramics by Dielectric Spectra