Abstract:As power efficiency becomes essential in automotive applications, DC-DC converters are widely employed [1]. However, size and thermal limits have made it challenging to continue using standard CMOS-based converters. Gallium Nitride (GaN) FETs, on the other hand, have a much higher conductivity with small size/capacitance in comparison to silicon FETs, enabling a highly efficient power conversion at high switching frequency (f SW ). However, there are several issues that must be resolved before using GaN in automotive. High f SW incurs larger di/dt and dv/dt transitions which injects high frequency electromagnetic interference (EMI) noise into the input bus. This creates unwanted noise or even a malfunction in a safety-critical system. A bulky input filter can reduce EMI, but it greatly increases size and cost. Several techniques [2-5] are reported to mitigate EMI. Frequency hopping using discrete frequencies is proposed in [2], but cannot spread the frequency evenly to lower the peak noise effectively. Alternatively, a series resistor is typically added at the gate of the GaN FET to slow down the transition [3-4]. However, the switching loss is dramatically increased. To mitigate this, adjustable driving strength is proposed in [5]. Unfortunately, the sensing and driver delays confine its use in low f SW applications, where the switch node rising time is several tens or hundreds of ns. Another issue of high f SW operation is that it causes significant current and voltage spikes due to the parasitics at the drain/source of the high side GaN FET (M H ), which could lead to GaN VDS breakdown or damage on logic-level FETs. Thus, EMI noise suppression and reliable operation of GaN FETs remain as major challenges in realizing high f SW power converters for automotive-use.

EMI Prediction and Filter Design for MHz GaN Based LLC Half-Bridge Converter

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

Design of High Power Density LLC Resonant Converter with Extra Wide Input Range

Research on High Efficiency Half-bridge LLC Resonant Converter

25.2 A 10mhz 3-to-40v VIN Tri-Slope Gate Driving GaN DC-DC Converter with 40.5dbµv Spurious Noise Compression and 79.3% Ringing Suppression for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

Virtual Prototype and GaN HEMT Based High Frequency LLC Converter Design

High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CRPS Application Using GaN Power IC

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

Impact of Dielectric Material on Passive Integration in LLC Resonant Converter

A Systematic Design and Optimization Technique for the Suppression of EMI Common Mode (CM) Noise

EMI Filter Design Based on High-Frequency Modeling of Common-mode Chokes

Digital Synchronous Rectifier Control Using Extended Harmonics Impedance Model for High-Frequency GaN-Based LLC Converters

Optimal design of GaN HEMT based high efficiency LLC converter

Integration of Both EMI Filter and Boost Inductor for 1-Kw PFC Converter

Modelling and Optimisation of Planar Matrix Transformer for High Frequency Regulated LLC Converter

A Current-Sharing Method for Interleaved High-Frequency LLC Converter with Partial Energy Processing.

High-Density Planar Integrated Magnetics with Two-Sided Merged Inductor Windings and Integrated Cores for Resonant DC/DC Converter

Interleaved LCLC Resonant Converter With Precise Current Balancing Over a Wide Input Voltage Range

Design and Experiment Research of Integrated EMI Filter Based on Flexible Multi-Layer Foils