Abstract:As a typical topological Kondo insulator, samarium hexaboride (SmB6) is an ideal platform to investigate the interaction between strongly correlated electron states and topological surface states. Compared with their corresponding bulk counterparts, low-dimensional SmB6 nanostructures have a larger surface-volume ratio, and thus they should possess more abundant surface states and remarkable quantum behaviors. But until now, few researches have been focused on the controllable growth techniques and electrical transport properties of the SmB6 nanostructures, which keep them from rapid developments. In this study, we report a simple chemical vapor deposition technique to prepare single crystalline SmB6 nanobelts and nanowires under control based on a solid-source route. The formation of the SmB6 nanobelts is attributed to the synergistic effect of the vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms, whereas the VLS mechanism should be responsible for the formation of the SmB6 nanowires. Electrical transport studies of these nanostructures reveal that their transportation curves have four different temperature regions due to the competition of the surface and bulk conduction. Because of the larger surface-to-volume ratio, these SmB6 nanobelts and nanowires have much smaller residual resistance ratio than their bulk counterparts, and thus the temperature region dominated by the surface conduction also extends to higher temperatures up to 10 K. Moreover, the as-grown SmB6 nanobelts (4.4 meV) and nanowires (3.1 meV) via our solid-source route are found to have much higher activation energy than the reported SmB6 nanowires (about 2.S meV). Under this circumstance, the surface conduction can play a bigger role in the electrical transport of SmB6, which is much beneficial for their future applications. This controllable solid-source synthesis route to fabricate the SmB6 nanostructures may shed new light on modulating the morphology and electrical transport of other metal boride nanostructures.

Large-scale Synthesis and Electrical Transport Properties of Single-Crystalline SmB6nanowires

Surface and Electronic Structure of Smb6 Through Scanning Tunneling Microscopy

Additional Energy Scale in SmB6 at Low-Temperature

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB<sub>6</sub>

Single Crystalline SmB6 Nanostructure Arrays: Controllable Synthesis and Field Emission Property

A Controllable Solid-Source CVD Route to Prepare Topological Kondo Insulator SmB6 Nanobelt and Nanowire Arrays with High Activation Energy

Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

An Easy Way to Controllably Synthesize One-Dimensional SmB6 Topological Insulator Nanostructures and Exploration of Their Field Emission Applications

Spin-Polarized Surface State Transport In A Topological Kondo Insulator Smb6 Nanowire

Composition-spread Growth and the Robust Topological Surface State of Kondo insulator SmB6 Thin Films

Anisotropic magnetoresistance as evidence of spin-momentum inter-locking in topological Kondo insulator SmB6 nanowires

Magnetoresistance Hysteresis in Topological Kondo Insulator SmB6 Nanowire

Hybridization, Inter-Ion Correlation, and Surface States in the Kondo Insulator SmB6

Nanoscale Conducting and Insulating Domains on YbB$_6$

Spin-selective tunneling from nanowires of the candidate topological Kondo insulator SmB6

Synthesis of Boron and Boride Compounds Nanowire Arrays by Chemical Vapor Deposition

Multiple Channel Transport Properties of Topological Surface States in SmB6 Nanoribbons

Fabrication of Single Crystalline Smb6 Nanocone Arrays and Investigation of Their Field Emission Properties

Planar tunneling spectroscopy of the topological Kondo insulator SmB$_6$

Topological surface conduction in Kondo insulator YbB$_{12}$

Bulk Rotational Symmetry Breaking in Kondo Insulator SmB_{6}