Optical properties of p-type ZnO doped by lithium and nitrogen
X.H. Wang,B. Yao,D.Z. Shen,Z.Z. Zhang,B.H. Li,Z.P. Wei,Y.M. Lu,D.X. Zhao,J.Y. Zhang,X.W. Fan,L.X. Guan,C.X. Cong
DOI: https://doi.org/10.1016/j.ssc.2007.01.002
IF: 1.934
2007-01-01
Solid State Communications
Abstract:A lithium and nitrogen doped p-type ZnO (denoted as ZnO: (Li, N)) film was prepared by RF-magnetron sputtering and post annealing techniques with c-Al2O3 as substrate. Its transmittance was measured to be above 95%. Three dominant emission bands were observed at 3.311, 3.219 and 3.346 eV, respectively, in the 80 K photoluminescence (PL) spectrum of the p-type ZnO:(Li, N), and are attributed to radiative electron transition from conduction band to a LiZn–N complex acceptor level (eFA), radiative recombination of a donor–acceptor pair and recombination of the LiZn–N complex acceptor bound exciton, respectively, based on temperature-dependent and excitation intensity-dependent PL measurement results. The LiZn–N complex acceptor level was estimated to be about 126 meV above the valence band by fitting the eFA data obtained in the temperature-dependent PL spectra.