INFLUENCE OF BIAS VOLTAGE ON DIAMOND-LIKE CARBON FILM DEPOSITED BY ARC ION PLATING

Zou Yousheng,Wei Wang,Jing Zheng,Chao Sun,Renkun Huang,Wen Li
DOI: https://doi.org/10.3321/j.issn:0412-1961.2004.05.019
IF: 1.797
2004-01-01
ACTA METALLURGICA SINICA
Abstract:The microstructures of the diamond-like carbon (DLC) films deposited on Si (100) substrate by using arc ion plating (AIP) under different pulse bias voltage were characterized using Raman spectra and X-ray photoelectron spectra (XPS). The results show that the ratio I-D/I-G decreases and sp(3) bond content increases with increasing pulse bias voltage firstly, and then the ratio I-D/I-G increases and sp(3) bond content decreases after the pulse bias voltage exceeding -200 V. The minimal ratio I-D/I-G, is 0.70 and the content of sp(3) bond is 26.7% at the bias voltage of -200 V. The hardness and modulus determined by using nanoindentation technique increase and then decrease with increasing pulse bias voltage. The hardness and modulus of the DLC films obtained at bias voltage of -200 V reaches a maximum value of 30.8 and 250.1 GPa, respectively.
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