Effects of Tm2O3 and Bi2O3 Co-Doped with Equal Content of Nb2O5 on the Properties of TiO2-Based Varistor Ceramics
Xiaolong Huang,Min Tang,Dachuan Zhu
DOI: https://doi.org/10.1007/s11665-024-09744-5
IF: 2.3
2024-06-26
Journal of Materials Engineering and Performance
Abstract:In this work, equal amount (0.6 mol.%) of Nb 2 O 5 and Tm 2 O 3 was respectively designed as donor and acceptor dopants, 0.3 mol.% SiO 2 was added as sintering aid in order to improve the comprehensive properties of TiO 2 -based ceramics and the sintering temperature of varistor ceramics was optimized. It was found that the varistor sintered at 1350 °C possessed the best integrated electrical properties with the breakdown voltage ( E b ) of 3.04 V/mm, the nonlinear coefficient ( α ) of 4.75, the giant dielectric constant ( ε r ) of 1.4 × 10 5 and the dielectric loss (tanδ) of 0.29, which was derived from synthetic effect of grain size, the highest density and grain boundary characteristics. Partial Tm 3+ dissolved in the TiO 2 lattice led to lattice distortion, while the others aggregated on the grain boundary to form Tm 2 Ti 2 O 7 . Meanwhile, the effects of Bi 2 O 3 co-doping on the properties and microstructure of TiO 2 varistors were discussed, indicating that the varistor co-doped with 0.5 mol.% of Bi 2 O 3 and 0.1 mol.% of Tm 2 O 3 exhibited a higher nonlinear coefficient ( α = 6), but deteriorated the dielectric properties. The secondary phase changed from Tm 2 Ti 2 O 7 to Bi 2 Ti 2 O 7, and the liquid phase sintering promoted the mass transfer and the grain growth when the Bi 2 O 3 doping amount exceeded 0.2 mol.%.
materials science, multidisciplinary