Modeling and Analysis of Wide Frequency Band Coaxial TSV Transmission Interconnect
Yujie Zhang,Changle Zhi,Gang Dong
DOI: https://doi.org/10.3390/mi15091127
IF: 3.4
2024-09-04
Micromachines
Abstract:In this paper, we first build the 3D model of coaxial TSV(CTSV), RDL, and bump of the CTSV interconnect, and extract the equivalent circuit model of each part. Then, we get the S-parameters of the 3D and equivalent circuit model of the CTSV interconnect structure; the validity of the equivalent circuit model is verified by comparing the consistency of the S-parameters. The simulation results show that the maximum errors for the S11 and S21 parameters are 0.4% and 0.18%, respectively, which proves the validity of the equivalent circuit modeling in this paper. Finally, parametric analysis is performed to investigate the effect of different model parameters on the signal-transmission characteristics of the CTSV interconnect.
chemistry, analytical,nanoscience & nanotechnology,instruments & instrumentation,physics, applied