Development of the preparation of ZnO quantum dots and their optical-electrical properties

杨玲敏,叶志镇

DOI: https://doi.org/10.3969/j.issn.1671-4776.2004.12.004

2004-01-01

Abstract:The basic preparations and the growth properties of ZnO quantum dots is summarized. An overview about the studies concerning the influence of the quant um-confinement effect on the optical and electrical properties of ZnO quantum d ots is given.

What problem does this paper attempt to address?

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Donghai Feng,Guofeng Zhang,Yang Li

DOI: https://doi.org/10.3390/nano14221825

2024-01-01

Abstract:Semiconductor nanoparticles of sizes smaller than exciton Bohr diameters undergo quantum confinement and are called quantum dots (QDs), which exhibit size-dependent physicochemical properties [...]
Optical studies of ZnO quantum dots grown on Si(0 0 1)

H.Z. Wu,D.J. Qiu,Y.J. Cai,X.L. Xu,N.B. Chen

DOI: https://doi.org/10.1016/S0022-0248(02)01711-6

IF: 1.8

2002-01-01

Journal of Crystal Growth

Abstract:Zinc oxide quantum dot (QD) structures were grown on Si(001) substrates by reactive electron beam evaporation at low substrate temperature. The samples were then annealed at various temperatures. Photoluminescence excitation characterization revealed the red shifts of the optical absorption peaks related to the QD transitions after the annealing of the samples, i.e. 340nm for the as-grown QD sample, and 363nm for the annealed sample. Effective mass approximation is used to interpret the observed optical transitions of the ZnO quantum dots. The quantum dot sizes grown by this method are estimated to be between 2.6 and 3.0nm in diameters. Calculation also shows that the quantum-confinement effect of the ZnO QDs becomes very weak when the size of ZnO quantum dots is larger than 8.0nm.
Optical studies of ZnO quantum dots grown on Si(001)

H.Z. Wu,D.J. Qiu,Y.J. Cai,X.L. Xu,N.B. Chen

DOI: https://doi.org/10.1016/S0022-0248(02)01711-6

IF: 1.8

2002-01-01

Journal of Crystal Growth

Abstract:Zinc oxide quantum dot (QD) structures were grown on Si(001) substrates by reactive electron beam evaporation at low substrate temperature. The samples were then annealed at various temperatures. Photoluminescence excitation characterization revealed the red shifts of the optical absorption peaks related to the QD transitions after the annealing of the samples, i.e. 340nm for the as-grown QD sample, and 363nm for the annealed sample. Effective mass approximation is used to interpret the observed optical transitions of the ZnO quantum dots. The quantum dot sizes grown by this method are estimated to be between 2.6 and 3.0nm in diameters. Calculation also shows that the quantum-confinement effect of the ZnO QDs becomes very weak when the size of ZnO quantum dots is larger than 8.0nm.
Synthesis and Characterization of Monodisperse CdSe Quantum Dots with Zinc Blende Structure

Deren Yang

2006-01-01

Abstract:Monodisperse CdSe quantum dots were synthesized by TOPO assisted reaction in nonaqueous solution.The samples were characterized using transmission electron microscopy,X-ray powder diffraction,size distribution histograms,UV-vis absorption and photoluminescence spectra.The results indicate that the monodisperse quantum dots exhibit zinc blende(cubic)diffraction patterns and high PL quantum yield.Moreover,the mechanism of formation of zinc blende structure was preliminarily discussed.
Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

谭华 Tan Hua,倪朕伊 Ni Zhenyi,皮孝东 Pi Xiaodong,杨德仁 Yang Deren

DOI: https://doi.org/10.3788/LOP54.030006

2017-01-01

Laser & Optoelectronics Progress

Abstract:Silicon quantum dots (Si QDs) are usually smaller than 10 nm. They have drawn much attention from researchers because of their novel electronic and optical properties caused by quantum confinement effect and surface effect, which are different from those of bulk silicon materials. In recent years, Si QDs have been applied in the field of optoelectronics because of their novel electronic and optical properties, and a series of research progress have been achieved. The electronic and optical properties of Si QDs are overviewed. The use of Si QDs in optoelectronic devices such as light-emitting diodes, solar cells and photodetectors is introduced in detail. The performance of different types of Si QDs in optoelectronic devices is analyzed as well. It is believed that if continuous efforts in the research on Si QDs are made, Si QDs will play a crucial role in the innovation of optoelectronic devices in the future.
Luminescent Characteristics and Applied Research Progress of II-VI Semiconductor Quantum Dots

Zhou Qing-cheng

Abstract:Semiconductor quantum dots have great practical value because of their unique optical characteristics. In this paper, the luminescent principle and properties of semiconductor quantum dots were introduced combining with our work about this aspect. In the experiments, it was found that the luminescent stability of the core/shell structural semiconductor quantum dots CdSe/CdS was enhanced in comparison with the bare CdSe quantum dots, and the absorption and emission spectra of the CdSe/CdS quantum dots shifted to the longer wavelength. It was also observed that the different sized semiconductor quantum dots showed different colors, and the absorption and emission spectra shifted to the longer wavelength as the size of the quantum dots increased. Particularly, the progress and applications of semiconductor quantum dots in optoelectronic devices and biomedicine were reviewed, and the perspective of the development was viewed.

Materials Science,Physics
Synthesis of 0-Dimensional Zinc Oxide Quantum Dots by Hydrothermal Method and Characterization of Its Quantum Effects

GU Baoxiang,MA Pei,QIAO Mingxiao,WANG Xiying,ZHANG Jianyun

DOI: https://doi.org/10.3969/j.issn.1005-023X.2013.z1.005

2013-01-01

Abstract:The 0-dimensional zinc oxide quantum dots,with uniform size and morphology,were prepared by a simple hydrothermal method at low temperature and atmospheric pressure,using ethanol as solvent.The blue shift of stimulated emissive characteristic wavelength and deep level luminescence changes were analyzed using fluorescence and UV-Vis spectrophotometer,which approve that the quantum effect on spectrum is obviously,and the green excited light by photoluminescence is increasing.The possible reasons for green fluorescence enhancement were discussed,and the problem that needs to be confirmed was put forward.
ZnO Quantum Dots: Physical Properties and Optoelectronic Applications

Vladimir A. Fonoberov,Alexander A. Balandin

DOI: https://doi.org/10.1166/jno.2006.002

2006-04-01

Journal of Nanoelectronics and Optoelectronics

Abstract:We present a review of the recent theoretical and experimental investigation of excitonic and phonon states in ZnO quantum dots. A small dielectric constant in ZnO leads to very large exciton binding energies, while wurtzite crystal structure results in unique phonon spectra different from those in cubic crystals. The exciton energies and radiative lifetimes are determined in the intermediate quantum confinement regime, which is pertinent to a variety of realistic ZnO quantum dots produced by wet chemistry methods. An analytical model for the interface and confined polar optical phonons is presented for spheroidal quantum dots of different size and barrier materials. The experimental part of the review covers results of the nonresonant and resonant Raman spectroscopy and photoluminescence study of ZnO quantum dots with sizes comparable to or larger than the exciton diameter in ZnO. The origins of the Raman phonon shifts and the mechanisms of the carrier recombination in ZnO quantum dots are discussed in detail. The reviewed properties of ZnO quantum dots are important for the proposed optoelectronic applications of these nanostructures.

engineering, electrical & electronic,nanoscience & nanotechnology,physics, applied
Studies and Development of Nano-ZnO

Yang Xiu

IF: 1.292

2003-01-01

Journal of Inorganic Materials

Abstract:With many special properties, nanostructure ZnO has become a focused research work recently and being applied widely. Many new interesting phenomena of quantum spacial confinement effects such as Anderson Localization of carriers, photons, phonons, have been discovered and the photoelectric properties of nanosize ZnO change obviously after treatment under different conditions, especially capped with other molecules or in well-confined media materials. Self-organized growth of ZnO brings up a lot of exciting structures and novel properties and provides some good ideas for designation and application of ZnO as semiconductor materials and devices. In this paper, the studies and development of nanostructure ZnO in current years were summarized.
Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Xin-chao Bian,Chun-qing Huo,Yue-fei Zhang,Qiang Chen

DOI: https://doi.org/10.1007/s11706-008-0006-8

2008-01-01

Frontiers of Materials Science in China

Abstract:Without the use of a metal catalyst in the process, ZnO with nanostructures was successfully prepared on Si (100) substrate by simple chemical vapor-deposition method. In our work, Ar was used as the plasma forming gas, O2 was the reactive gas and metal zinc powder (99.99% purity) vaporized by cylinder hollow-cathode discharge (HCD) acted as the zinc source. The crystal structures of the as-synthesized ZnO nanostructures were characterized by X-ray diffraction (XRD); the ZnO sample growing on the wall of the crucible showed a ‘comb-like’ nanostructure, while the other one at the bottom of the crucible showed a ‘rod-like’ structure, which can be attributed to the difference of the oxygen content. The measurement on the photoluminescence (PL) performance of the ZnO nanostructures was carried out at room temperature. The results indicated that the ‘comb-shape’ ZnO nanomaterial possessed a remarkably strong ultraviolet emission peak centered at 388 nm, while ZnO nanorods, except better ultraviolet emission, also had relatively strong blue-green emission ranging from 470 to 600 nm due to the existence of oxygen vacancies. The growth mechanism of ZnO with nanostructures is also discussed in this paper.
Chemistry Preparation Technique and Progress of Nanoparticle Zinc Oxide

胡泽善,汤敏,丁社光,蔡强,钟成华,傅敏

DOI: https://doi.org/10.3321/j.issn:1005-023x.2008.z2.021

2008-01-01

Abstract:Zinc oxide is a kind of important semiconductor material.Nanoparticle ZnO possesses some special properties and is widely applied in the process of photo device,heterogeneous catalysts and photo catalysts,solar cell. These properties and application depend on particle size and preparation method to a great extent New chemistry preparation investigations and quantum size effect of nanoparticle ZnO are continuously reported.Main chemistry preparation techniques and the newest reports are summarized in this review.Their characteristics are discussed along with analysis of our previous researches.
Study on the Optical Properties of ZnO Quantum Dots Prepared by Chemical Etching Method

Zhao Xile

Abstract:Chemical etching method was used to adjust the size of ZnO quantum dot,and observed the quantum confinement effect successfully.The experimental results show that the movement of photoluminescence(PL)peak wasn′t observed on the PL spectrum in the sample without adding surfactants.After adding surfactants,the PL peak of the sample showed a blue shift correlated with decrease in quantum dot size.In addition,the addition of the PL spectrum band gap was consistent with the theoretical calculation result of the effective mass model.

Physics,Materials Science
Research on the Optical Property of Cd-doped ZnS Quantum Dots

胡智学,李兴华,朱俊杰

2013-01-01

Abstract:Cd-doped ZnS(Znx Cd1-x S)quantum dots(QDs)were prepared via water phase synthetic technique with glutathione(GSH)as the surface coating agent.The structure,shape and size of QDs were characterized by X-ray diffraction(XRD)and scanning electron microscopy(SEM).The optical properties were analyzed by fluorescence spectra(FL)and Fourier transform infrared spectroscopy(FTIR).The parameters of GSH dosage,Cd dosage,pH,reaction temperature and time were optimized.The results showed that the QDs were cubic zinc blende,with the size of about 1-2nm,and strong fluorescence emission peak in 430-500nm,and good upconversion property was observed.
Zno Quantum Dots Synthesized by A Vapor Phase Transport Process

JG Lu,ZZ Ye,JY Huang,LP Zhu,BH Zhao,ZL Wang,S Fujita

DOI: https://doi.org/10.1063/1.2172154

IF: 4

2006-01-01

Applied Physics Letters

Abstract:A vapor phase transport growth process has been developed to synthesize ZnO quantum dots (QDs) on Si substrates. The characteristics were investigated for as-prepared ZnO QDs without any additional treatment. The formation of ZnO QDs with 6 nm in height and 15 nm in diameter is confirmed by scanning electron microscope and atomic force microscopy. Room-temperature photoluminescence reveals that the as-prepared ZnO QDs exhibit a predominant ultraviolet emission at 3.32 eV while the low energy defect-related blue-green emission is significantly quenched. The band gap of ZnO QDs is determined to be 3.41 eV, which evidently indicates the quantum confinement effects.
Self-Assembled Zno Quantum Dots with Tunable Optical Properties

J. G. Lu,Z. Z. Ye,Y. Z. Zhang,Q. L. Liang,Sz. Fujita,Z. L. Wang

DOI: https://doi.org/10.1063/1.2221892

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Self-assembled ZnO quantum dots (QDs) were achieved by a vapor phase transport process. ZnO nanodots were naturally formed on solid substrates in the Volmer-Weber growth mode. Size control of nanodots could be readily realized by varying the growth time. The as-prepared ZnO QDs are of high quality and very stable after formation. The blueshift of band gap energies derived from quantum confinement effects was confirmed by optical absorption spectra. Photoluminescence spectra revealed the tunable behavior of ultraviolet luminescence due to exciton localization. The realization of size-tuned color from ZnO QDs makes them more promising for practical applications.
Lattice and optical property evolution of ultra-small ZnS quantum dots grown from a single-source precursor

S.H. Lu,T.F. Chen,A.J. Wang,Z.L. Wu,Y.S. Wang

DOI: https://doi.org/10.1016/j.apsusc.2014.01.194

IF: 6.7

2014-04-01

Applied Surface Science

Abstract:Cubic structured ZnS quantum dots (QDs) with sizes from 1.6 to 4.0nm were grown at temperatures of 90–210°C from zinc ethylxanthate single-source precursor. The quantum dots were characterized by X-ray diffraction, high resolution transmission electron microscope, UV–vis absorption spectroscope, photoluminescence spectroscope and micro-Raman spectroscope. Effects of the size on their lattice and optical properties were studied in detail. The lattices contract with a decrease in the quantum dot sizes, especially for quantum dots with sizes smaller than 2.9nm. The contraction rate varies almost linearly with the quantum dot sizes and the maximum size for the contraction is derived to be 4.5nm. The exciton ground state energy increases with a decrease in the quantum dot size. Weak UV emission and strong blue-green emission were observed and transition paths for luminescence were provided. Relative intensity of 1LO and 2LO modes of the quantum dots is sensitive to their sizes, while their frequencies are insensitive to the quantum dot sizes.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Electrostatic force analysis, optical measurements, and structural characterization of zinc oxide colloidal quantum dots synthesized by sol-gel method

Min S. Choi,Xenia Meshik,Souvik Mukherjee,Sidra Farid,Samuel Doan,Leigha Covnot,Mitra Dutta,Michael A. Stroscio

DOI: https://doi.org/10.1063/1.4935948

IF: 2.877

2015-11-21

Journal of Applied Physics

Abstract:ZnO quantum dots (QDs) are used in a variety of applications due to several desirable characteristics, including a wide band gap, luminescence, and biocompatibility. Wurtzite ZnO QDs also exhibit a spontaneous polarization along the growth axis, leading to large electric fields. In this work, ZnO QDs around 7 nm in diameter are synthesized using the sol-gel method. Their size and structure are confirmed using photoluminescence, Raman spectroscopy, atomic force microscopy, and transmission electron microscopy. Additionally, electrostatic force microscopy (EFM) is used to measure the amplitude change in the probe which is associated with the electric field produced by ZnO immobilized by layer-by-layer synthesis technique. The measured electrostatic field of 108 V/m is comparable to theoretically predicted value. Additionally, the strength of the electrostatic field is shown to depend on the orientation of the QD's c-axis. These results demonstrate a unique technique of quantifying ZnO's electric force using EFM.

physics, applied
Investigation of the optical properties of poly-vinyl pyrrolidone (PVP) capped ZnO quantum dots

CL Yang,JN Wang,L Guo,SH Yang,WK Ge

2001-01-01

Abstract:Optical Properties of ZnO quantum dots (QDs) capping with PVP molecules have been investigated. It is shown that surface modification by PVP can dramatically change ZnO QDs properties such as their sizes and emission spectra. At optimized Zn(II)/PVP ratio, strong UV emission from QDs was obtained by fully eliminating the emission from the surface states. Detailed study shows that the UV emission originates from near band edge bound state emission rather than from band-to-band or free exciton recombination.
Controllable growth and characterization of ZnO/MgO quasi core-shell quantum dots

Yujia Zeng,Zhizhen Ye,Fu Liu,Dongyang Li,Yangfan Lü,Wolfgang Jäger,Haiping He,Liping Zhu,Jingyun Huang,Binghui Zhao

DOI: https://doi.org/10.1021/cg800422g

IF: 4.01

2009-01-01

Crystal Growth & Design

Abstract:ZnO/MgO quasi core-shell quantum dots (QDs) were grown by a metal-organic chemical vapor deposition method on silicon substrates. The core-shell structure was well-characterized by a combination of cross-sectional transmission electron microscopy and angle-resolved X-ray photoelectron spectroscopy (XPS). Valence band XPS measurements were performed to investigate the effects of MgO shell layer on the energy band of ZnO/MgO QDs. Photoluminescence (PL) emission from the QDs showed remarkable enhancement after the growth of the MgO layer. In addition, exciton binding energy of 118 +/- 5 meV in the ZnO/MgO QDs was obtained from temperature-dependent PL.
Preparation of II-VI Group Semiconductor Quantum Dots(QDs) and QDs/Polymer Nanocomposites

黄玉刚,朱祖钊,李光吉,陈旭东

DOI: https://doi.org/10.3969/j.issn.1671-5381.2008.03.008

2008-01-01

Abstract:Ⅱ-Ⅵ group semiconductor quantum dots(QDs) and QDs/polymer nanocomposites have attracted considerable interests because of their unique photocatalystic,optical and optoelectronic properties.These properties depend on the preparation methods of the semiconductor QDs and QDs/polymer nanocomposites.It is important to control the size distribution and simultaneously to eliminate the surface states of QDs.In this review,the methods of preparing Ⅱ-Ⅵ group semiconductor Quantum Dots(QDs) and QDs/Polymer nanocomposites were discussed in detail,and the characteristics and advances in these mehtods were also described.

Development of the preparation of ZnO quantum dots and their optical-electrical properties

Semiconductor Quantum Dots: Synthesis, Properties and Applications

Optical studies of ZnO quantum dots grown on Si(0 0 1)

Optical studies of ZnO quantum dots grown on Si(001)

Synthesis and Characterization of Monodisperse CdSe Quantum Dots with Zinc Blende Structure

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Luminescent Characteristics and Applied Research Progress of II-VI Semiconductor Quantum Dots

Synthesis of 0-Dimensional Zinc Oxide Quantum Dots by Hydrothermal Method and Characterization of Its Quantum Effects

ZnO Quantum Dots: Physical Properties and Optoelectronic Applications

Studies and Development of Nano-ZnO

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Chemistry Preparation Technique and Progress of Nanoparticle Zinc Oxide

Study on the Optical Properties of ZnO Quantum Dots Prepared by Chemical Etching Method

Research on the Optical Property of Cd-doped ZnS Quantum Dots

Zno Quantum Dots Synthesized by A Vapor Phase Transport Process

Self-Assembled Zno Quantum Dots with Tunable Optical Properties

Lattice and optical property evolution of ultra-small ZnS quantum dots grown from a single-source precursor

Electrostatic force analysis, optical measurements, and structural characterization of zinc oxide colloidal quantum dots synthesized by sol-gel method

Investigation of the optical properties of poly-vinyl pyrrolidone (PVP) capped ZnO quantum dots

Controllable growth and characterization of ZnO/MgO quasi core-shell quantum dots

Preparation of II-VI Group Semiconductor Quantum Dots(QDs) and QDs/Polymer Nanocomposites